scholarly journals Texture mediated grain boundary network design in two dimensions

2016 ◽  
Vol 31 (9) ◽  
pp. 1171-1184 ◽  
Author(s):  
Oliver K. Johnson ◽  
Christopher A. Schuh

Abstract

1999 ◽  
Vol 5 (S2) ◽  
pp. 146-147
Author(s):  
V. J. Keast ◽  
D. B. Williams

The quantification of grain boundary segregation levels, as measured with X-ray energy dispersive spectroscopy (XEDS) in a scanning transmission electron microscope (STEM), is dependent on the size and shape of the interaction volume. The segregation level T (in atoms/nm2) is related to the intensities of the characteristic peaks in the X-ray spectrum, Is and Im, bywhere ρ is the density of the matrix in atoms/nm3, Am and As are the atomic masses of the matrix and segregant respectively and ksm is the usual k-factor. The geometric factor, V/A, is the ratio of the volume of interaction to the area of the grain boundary inside in the interaction volume. Different models have been used to describe the interaction volume and these are illustrated in Fig. 1 and the appropriate expression for V/A is given in each case. In the simplest case, beam broadening is neglected and the interaction volume can be described as a cylinder with diameter equal to the probe size, d.


MRS Bulletin ◽  
1999 ◽  
Vol 24 (2) ◽  
pp. 34-38 ◽  
Author(s):  
Robert C. Cammarata ◽  
John C. Bilello ◽  
A. Lindsay Greer ◽  
Karl Sieradzki ◽  
Steven M. Yalisove

Almost all thin films deposited on a substrate are in a state of stress. Fifty years ago pioneering work concerning the measurement of thin-film stresses was conducted by Brenner and Senderoff. They electroplated a metal film onto a thin metal substrate strip fixed at one end and measured the deflection of the free end of the substrate with a micrometer. Using a beam-bending analysis, they were able to calculate a residual stress from the measured deflection of the bimetallic film-substrate system. A variety of other, more sensitive methods of measuring the curvature of the surface of a film-substrate system have since been developed using, for example, capacitance measurements and interferometry techniques.When a monochromatic x-ray beam is incident onto a curved single crystal, the diffraction condition is satisfied only for regions of the crystal where the inclination angle with respect to the incident beam exactly matches the Bragg angle. When a parallel beam plane-wave source is used, the diffracted beam from a particular set of (hkl) planes gives rise to a single narrow-contour band. If the crystal is rocked by an angle ω, the contour band will move by a certain distance D. The radius of curvature R of the crystal lattice planes is given bywhere θ is the Bragg angle. Equal rocking angles produce equivalent D values for uniform curvature, or varied D values for nonuniform curvature. Using this procedure, detailed contour maps of the angular displacement field of the crystal can be mapped in two dimensions.


2014 ◽  
Vol 29 (2) ◽  
pp. 277-287 ◽  
Author(s):  
Lu Wang ◽  
Jianqiu Zhou ◽  
Shu Zhang ◽  
Yingguang Liu ◽  
Hongxi Liu ◽  
...  

Abstract


2018 ◽  
Vol 33 (18) ◽  
pp. 2647-2660 ◽  
Author(s):  
Pavel Lejček ◽  
Monika Všianská ◽  
Mojmír Šob

Abstract


2019 ◽  
Vol 883 ◽  
Author(s):  
Simon Thalabard ◽  
Jérémie Bec


2016 ◽  
Vol 32 (1) ◽  
pp. 166-173 ◽  
Author(s):  
Nazia Nafsin ◽  
Ricardo H.R. Castro

Abstract


1978 ◽  
Vol 21 (85) ◽  
pp. 429-444 ◽  
Author(s):  
D. R. Homer ◽  
J. W. Glen

AbstractMonocrystals and bicrystals of ice have been creep tested at temperatures between 4 and — 30°C. The bicrystals had a single grain boundary running parallel to the tensile axis; this configuration inhibited grain-boundary slip between the two grains. The creep tests, which were carried out at constant stress σ and temperature T, yielded data of strain ϵ for time elapsed since the start of the test. These data showed accelerating creep for both monocrystals and bicrystals at all strain levels. Strain-rates were derived at strains of 0.01, 0.05. and 0.10, and these rates were fitted to the expressionk is Boltzmann’s constant and E is the creep activation energy. Derived values of n were 1.9 for monocrystals and 2.9 for bicrystals. The creep activation energy was found to be 78 kJ/mol for monocrystals and 75 kJ/mol for bicrystals. The processes of creep deformation in mono-, bi- and polycrystals are discussed.


2014 ◽  
Vol 24 (3) ◽  
pp. 490-520 ◽  
Author(s):  
MICHA SHARIR ◽  
ADAM SHEFFER ◽  
JOSHUA ZAHL

We establish an improved upper bound for the number of incidences betweenmpoints andncircles in three dimensions. The previous best known bound, originally established for the planar case and later extended to any dimension ≥ 2, isO*(m2/3n2/3+m6/11n9/11+m+n), where theO*(⋅) notation hides polylogarithmic factors. Since all the points and circles may lie on a common plane (or sphere), it is impossible to improve the bound in ℝ3without first improving it in the plane.Nevertheless, we show that if the set of circles is required to be ‘truly three-dimensional’ in the sense that no sphere or plane contains more thanqof the circles, for someq≪n, then for any ϵ > 0 the bound can be improved to\[ O\bigl(m^{3/7+\eps}n^{6/7} + m^{2/3+\eps}n^{1/2}q^{1/6} + m^{6/11+\eps}n^{15/22}q^{3/22} + m + n\bigr). \]For various ranges of parameters (e.g., whenm= Θ(n) andq=o(n7/9)), this bound is smaller than the lower bound Ω*(m2/3n2/3+m+n), which holds in two dimensions.We present several extensions and applications of the new bound.(i)For the special case where all the circles have the same radius, we obtain the improved boundO(m5/11+ϵn9/11+m2/3+ϵn1/2q1/6+m+n).(ii)We present an improved analysis that removes the subpolynomial factors from the bound whenm=O(n3/2−ϵ) for any fixed ϵ < 0.(iii)We use our results to obtain the improved boundO(m15/7) for the number of mutually similar triangles determined by any set ofmpoints in ℝ3.Our result is obtained by applying the polynomial partitioning technique of Guth and Katz using a constant-degree partitioning polynomial (as was also recently used by Solymosi and Tao). We also rely on various additional tools from analytic, algebraic, and combinatorial geometry.


2018 ◽  
Vol 26 (3) ◽  
pp. 32-39
Author(s):  
S. Rozeveld ◽  
C. Reinhardt ◽  
E. Bykov ◽  
A. Wall

Abstract


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