Determination of the energy release rate in the interfacial delamination of silicon nitride film on gallium arsenide substrate via nanoindentation

2014 ◽  
Vol 29 (6) ◽  
pp. 801-810 ◽  
Author(s):  
Mingyuan Lu ◽  
Han Huang
Keyword(s):  
Gallium Arsenide ◽  
Silicon Nitride ◽  
Energy Release Rate ◽  
Energy Release ◽  
Release Rate ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Interfacial Delamination ◽  
Image Position

Abstract

Interfacial Delamination Propagation in Multi-Layered High-Density Wiring Electronic Packaging Structures

2000 ◽  
Author(s):  
Hurang Hu ◽  
Weidong Xie ◽  
Suresh Sitaraman
Keyword(s):  
Energy Release Rate ◽  
Energy Release ◽  
Analytical Model ◽  
Elastic Material ◽  
Release Rate ◽  
Material Properties ◽  
Electronic Packaging ◽  
Base Layer ◽  
Interfacial Delamination ◽  
Delamination Propagation

Abstract One of the most common failure modes in multi-layered electronic packaging structures is interfacial delamination. The objective of this research is to examine the possibilities of interfacial delamination in a next-generation electronic packaging structure under thermal loading. A sophisticated analytical model has been developed to determine energy release rate and stress intensity factor for delamination propagation. The model takes into consideration the temperature-dependent material properties as well as direction-dependent material properties. Although delamination between two adjacent layers is studied, the model takes into consideration the effect of all dielectric, metallization, and substrate layers in the multi-layered structure. Assuming that an initial delamination exists between the base layer and the Copper metallization layer, the present work studies the propagation of delamination. In the analytical model, the base layer is modeled as an orthotropic thermo-elastic material. Copper and the polymer dielectric materials are modeled as isotropic thermo-elastic material. For the Copper/base layer interface, the variation of bimaterial constant (ε) with temperature is obtained through the analytical model. The effect of some key parameters, such as materials Young’s modulus, coefficient of thermal expansion, and the base layer thickness on energy release rate is presented. Design recommendations for improved thermo-mechanical reliability are proposed.

Effect of ultraviolet cure on the interfacial toughness and structure of SiOC thin film on Si substrate

2010 ◽  
Vol 25 (10) ◽  
pp. 1910-1916 ◽  
Author(s):  
M. Takeda ◽  
N. Matoba ◽  
K. Matsuda ◽  
H. Seki ◽  
K. Inoue ◽  
...  
Keyword(s):  
Energy Release Rate ◽  
Energy Release ◽  
Release Rate ◽  
Mechanical Energy ◽  
Uv Curing ◽  
Si Substrate ◽  
Force Microscopy ◽  
Interfacial Delamination ◽  
Atomic Force ◽  
Delamination Toughness

An experimental study on the adhesion of thin films was conducted for the ultraviolet (UV)-cured SiOC films on Si substrate by examining the mechanical energy balance during the indentation process combined with atomic force microscopy observation. The effect of UV cure on the interfacial delamination toughness and the structure of the SiOC films are discussed. The energy release rate of the SiOC film/Si substrate interfacial delamination increases with the increases in the time of UV curing, indicating that the indentation method is efficient to examine the adhesion of coating. As the UV curing time increases, the film thickness and the Si–CH3 bond structure decrease, whereas the SiO2 network structure develops and the mechanical properties of the film are improved. Furthermore, the energy release rate of SiOC film/Si interfacial delamination is well correlated in a proportional manner to the Young's modulus of the film.

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