Effects of buffer layer thickness on the surface roughness of In0.3Ga0.7As thin films: A phase-field simulation

2013 ◽  
Vol 28 (23) ◽  
pp. 3218-3225 ◽  
Author(s):  
Pingping Wu ◽  
Fangliang Gao ◽  
Guoqiang Li
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Phase Field ◽  
Phase Field Simulation ◽  
Field Simulation ◽  
Buffer Layer Thickness ◽  
Image Position

Abstract

Buffer Layer Thickness and the Properties of InN Thin Films on AIN- Seeded (00.1) Sapphire And (111) Silicon

1994 ◽  
Vol 339 ◽  
Author(s):  
T. J. Kistenmacher ◽  
S. A. Ecelberger ◽  
W. A. Bryden
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Electrical Transport ◽  
Lattice Mismatch ◽  
Electrical Mobility ◽  
Seeded Growth ◽  
Electrical Transport Properties ◽  
Buffer Layer Thickness ◽  
Homogeneous Strain

ABSTRACTIntroduction of a buffer layer to facilitate heteroepitaxy in thin films of the Group IIIA nitrides has had a tremendous impact on growth morphology and electrical transport. While AIN- and self-seeded growth of GaN has captured the majority of attention, the use of AIN-buffered substrates for InN thin films has also had considerable success. Herein, the properties of InN thin films grown by reactive magnetron sputtering on AIN-buffered (00.1) sapphire and (111) silicon are presented and, in particular, the evolution of the structural and electrical transport properties as a function of buffer layer sputter time (corresponding to thicknesses from ∼50Å to ∼0.64 μm) described. Pertinent results include: (a) for the InN overlayer, structural coherence and homogeneous strain normal to the (00.1) growth plane are highly dependent on the thickness of the AIN-buffer layer; (b) the homogeneous strain in the AIN-buffer layer is virtually nonexistent from a thickness of 200Å (where a significant X-ray intensity for (00.2)AIN is observed); and (c) the n-type electrical mobility for films on AIN-nucleated (00.1) sapphire is independent of AIN-buffer layer thickness, owing to divergent variations in carrier concentration and film resistivity. These effects are in the main interpreted as arising from a competition between the lattice mismatch of the InN overlayer with the substrate and with the AIN-buffer layer.

Effects of ZnO buffer layer thickness on properties of ZnO thin films deposited by low-pressure MOCVD

2004 ◽  
Vol 262 (1-4) ◽  
pp. 456-460 ◽  
Author(s):  
Yuantao Zhang ◽  
Guotong Du ◽  
Boyang Liu ◽  
HuiChao Zhu ◽  
Tianpeng Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Low Pressure ◽  
Zno Thin Films ◽  
Low Pressure Mocvd ◽  
Buffer Layer Thickness ◽  
Zno Buffer Layer

Phase-field simulation of strain-induced domain switching in magnetic thin films

2011 ◽  
Vol 98 (11) ◽  
pp. 112505 ◽  
Author(s):  
Jia-Mian Hu ◽  
G. Sheng ◽  
J. X. Zhang ◽  
C. W. Nan ◽  
L. Q. Chen
Keyword(s):  
Thin Films ◽  
Phase Field ◽  
Domain Switching ◽  
Magnetic Thin Films ◽  
Phase Field Simulation ◽  
Field Simulation
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