Correlation of indentation-induced phase transformations with the degree of relaxation of ion-implanted amorphous silicon

2013 ◽  
Vol 28 (8) ◽  
pp. 1056-1060 ◽  
Author(s):  
Leonardus B. Bayu Aji ◽  
S. Ruffell ◽  
B. Haberl ◽  
J.E. Bradby ◽  
J.S. Williams
Keyword(s):  
Phase Transformations ◽  
Amorphous Silicon ◽  
Image Position ◽  
Ion Implanted

Abstract

scholarly journals Effect of oxygen concentration on nanoindentation-induced phase transformations in ion-implanted amorphous silicon

2009 ◽  
Vol 105 (8) ◽  
pp. 083520 ◽  
Author(s):  
S. Ruffell ◽  
J. Vedi ◽  
J. E. Bradby ◽  
J. S. Williams ◽  
B. Haberl
Keyword(s):  
Phase Transformations ◽  
Amorphous Silicon ◽  
Oxygen Concentration ◽  
Effect Of Oxygen ◽  
Ion Implanted

scholarly journals Phase transformations induced by spherical indentation in ion-implanted amorphous silicon

2006 ◽  
Vol 100 (1) ◽  
pp. 013520 ◽  
Author(s):  
B. Haberl ◽  
J. E. Bradby ◽  
S. Ruffell ◽  
J. S. Williams ◽  
P. Munroe
Keyword(s):  
Phase Transformations ◽  
Amorphous Silicon ◽  
Spherical Indentation ◽  
Ion Implanted

Defects in ion implanted silicon

1978 ◽  
Vol 36 (1) ◽  
pp. 386-387
Author(s):  
J.A. Lambert ◽  
P.S. Dobson
Keyword(s):  
Defect Structure ◽  
Dislocation Loops ◽  
Frank Loop ◽  
Burgers Vector ◽  
Temperature Range ◽  
Perfect Dislocation ◽  
Contrast Analysis ◽  
Image Position ◽  
Ion Implanted

The defect structure of ion-implanted silicon, which has been annealed in the temperature range 800°C-1100°C, consists of extrinsic Frank faulted loops and perfect dislocation loops, together with‘rod like’ defects elongated along <110> directions. Various structures have been suggested for the elongated defects and it was argued that an extrinsically faulted Frank loop could undergo partial shear to yield an intrinsically faulted defect having a Burgers vector of 1/6 <411>.This defect has been observed in boron implanted silicon (1015 B+ cm-2 40KeV) and a detailed contrast analysis has confirmed the proposed structure.

HYDROGEN PROFILING IN GAS PHASE DOPED AND ION IMPLANTED AMORPHOUS SILICON FILMS

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-779-C4-782 ◽  
Author(s):  
F. J. Demond ◽  
G. Müller ◽  
H. Damjantschitsch ◽  
H. Mannsperger ◽  
S. Kalbitzer ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Gas Phase ◽  
Silicon Films ◽  
Ion Implanted

The Structure of Ion-Implanted Amorphous Silicon

1998 ◽  
Vol 540 ◽  
Author(s):  
J. M. Gibson ◽  
J-Y. Cheng ◽  
P. Voyles ◽  
M.M.J. TREACY ◽  
D.C. Jacobson
Keyword(s):  
Amorphous Silicon ◽  
Network Model ◽  
Random Network ◽  
Amorphous Semiconductors ◽  
Range Order ◽  
Medium Range Order ◽  
Medium Range ◽  
Large Heat ◽  
Continuous Random Network ◽  
Ion Implanted

AbstractUsing fluctuation microscopy, we show that ion-implanted amorphous silicon has more medium-range order than is expected from the continuous random network model. From our previous work on evaporated and sputtered amorphous silicon, we conclude that the structure is paracrystalline, i.e. it possesses crystalline-like order which decays with distance from any point. The observation might pose an explanation for the large heat of relaxation that is evolved by ion-implanted amorphous semiconductors.

Static electropulsing-induced phase transformations of a cold-deformed ZA27 alloy

2011 ◽  
Vol 26 (14) ◽  
pp. 1696-1701 ◽  
Author(s):  
Yaohua Zhu ◽  
Suet To ◽  
Xianming Liu ◽  
Guoliang Hu ◽  
Qing Xu
Keyword(s):  
Phase Transformations ◽  
Za27 Alloy ◽  
Image Position

Abstract

Dynamics of laser induced phase transformations in amorphous silicon

1997 ◽  
Vol 109-110 ◽  
pp. 317-321 ◽  
Author(s):  
O. Borusı́k ◽  
R. Černý ◽  
P. Přikryl ◽  
K.M. El-Kader ◽  
I. Ulrych ◽  
...  
Keyword(s):  
Phase Transformations ◽  
Amorphous Silicon
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