Investigation of the crystal structure on the nanomechanical properties of pulsed laser deposited niobium nitride thin films

2012 ◽  
Vol 27 (13) ◽  
pp. 1725-1731 ◽  
Author(s):  
Md Abdullah Al Mamun ◽  
Ashraf Hassan Farha ◽  
Yüksel Ufuktepe ◽  
Hani E. Elsayed-Ali ◽  
Abdelmageed A. Elmustafa

Abstract

2012 ◽  
pp. 715-722
Author(s):  
M. A. Mamun ◽  
A. H. Farha ◽  
Y. Ufuktepe ◽  
H. E. Elsayed-Ali ◽  
A. A. Elmustafa

2021 ◽  
Vol 551 ◽  
pp. 149333
Author(s):  
T. Roch ◽  
M. Gregor ◽  
S. Volkov ◽  
M. Čaplovičová ◽  
L. Satrapinskyy ◽  
...  

2012 ◽  
Vol 1424 ◽  
Author(s):  
M. A. Mamun ◽  
A. H. Farha ◽  
Y. Ufuktepe ◽  
H. E. Elsayed-Ali ◽  
A. A. Elmustafa

ABSTRACTNanomechanical and structural properties of pulsed laser deposited niobium nitride thin films were investigated using X-ray diffraction, atomic force microscopy, and nanoindentation. NbN film reveals cubic δ-NbN structure with the corresponding diffraction peaks from the (111), (200), and (220) planes. The NbN thin films depict highly granular structure, with a wide range of grain sizes that range from 15-40 nm with an average surface roughness of 6 nm. The average modulus of the film is 420±60 GPa, whereas for the substrate the average modulus is 180 GPa, which is considered higher than the average modulus for Si reported in the literature due to pile-up. The hardness of the film increases from an average of 12 GPa for deep indents (Si substrate) measured using XP CSM and load control (LC) modes to an average of 25 GPa measured using the DCM II head in CSM and LC modules. The average hardness of the Si substrate is 12 GPa.


1994 ◽  
Vol 48 (6) ◽  
pp. 733-736 ◽  
Author(s):  
N. T. McDevitt ◽  
J. S. Zabinski ◽  
M. S. Donley ◽  
J. E. Bultman

Crystalline disorder in thin films plays an important role in determining their properties. Disorder in the crystal structure of MoS2 films prepared by magnetron sputtering and pulsed laser deposition was evaluated with the use of Raman spectroscopy. The peak positions and bandwidths of the first-order Raman bands, in the region 100 to 500 cm−1, were used as a measure of crystalline order. In addition, a low-frequency feature was observed at 223 cm−1 that is not part of the normal first-order spectrum of a fully crystalline specimen. Data presented here demonstrate that this band is characteristic of crystalline disorder, and its intensity depends on the annealing history of the film. This behavior seems to be analogous to the disorder found in graphite thin films.


2016 ◽  
Vol 31 (20) ◽  
pp. 3223-3229 ◽  
Author(s):  
S. Karamat ◽  
R.S. Rawat ◽  
P. Lee ◽  
T.L. Tan ◽  
C. Ke ◽  
...  

Abstract


2011 ◽  
Vol 21 (3) ◽  
pp. 143-146 ◽  
Author(s):  
S. Chaudhuri ◽  
M. R. Nevala ◽  
T. Hakkarainen ◽  
T. Niemi ◽  
I. J. Maasilta

2011 ◽  
Vol 26 (15) ◽  
pp. 1836-1841 ◽  
Author(s):  
S.R. Sarath Kumar ◽  
A. Alyamani ◽  
J.W. Graff ◽  
T.M. Tritt ◽  
H.N. Alshareef

Abstract


Sign in / Sign up

Export Citation Format

Share Document