Selective lateral ZnO nanowire growth by surface diffusion on nanometer scale–patterned alumina on silicon

2011 ◽  
Vol 26 (17) ◽  
pp. 2224-2231 ◽  
Author(s):  
Bing Hu ◽  
Nitin Chopra ◽  
Pawan Tyagi ◽  
Bruce Hinds

Abstract

2005 ◽  
Vol 879 ◽  
Author(s):  
M. Wei ◽  
D. Zhi ◽  
J. L. MacManus-Driscoll

AbstractZnO, which exhibits a direct bandgap of 3.37 eV at room temperature with a large exciton binding energy of 60 meV,is of considerable technological importance because of its potential use in short-wavelength devices, such as ultraviolet (UV) light-emitting diodes and laser diodes. The fabrication and application of 1-D ZnO nanostructures has attracted considerable interest in recent years. In this work, we produced single crystal nanowires of zinc oxide using a novel self-seeded growth using ultrasonic spray assisted chemical vapour deposition, in which a nanocrystalline seed layer was first deposited onto a glass substrate and the nanowires subsequently grown using a different precursor concentration and substrate temperature. The diameter of the nanowires is in the range of 20-80 nm and the length of the wires is as long as 10 μm. The single crystal nature of the nanowires was revealed by high resolution transmission electron microscopy. The formation of liquid droplets due to the reducing atmosphere and the higher temperature during the nanowire growth was found to be the key step of the ZnO nanowire formation.


2019 ◽  
Vol 117 (1) ◽  
pp. 152-160 ◽  
Author(s):  
Amnon Rothman ◽  
Vladimir G. Dubrovskii ◽  
Ernesto Joselevich

Surface-guided growth of planar nanowires offers the possibility to control their position, direction, length, and crystallographic orientation and to enable their large-scale integration into practical devices. However, understanding of and control over planar nanowire growth are still limited. Here, we study theoretically and experimentally the growth kinetics of surface-guided planar nanowires. We present a model that considers different kinetic pathways of material transport into the planar nanowires. Two limiting regimes are established by the Gibbs–Thomson effect for thinner nanowires and by surface diffusion for thicker nanowires. By fitting the experimental data for the length–diameter dependence to the kinetic model, we determine the power exponent, which represents the dimensionality of surface diffusion, and results to be different for planar vs. nonplanar nanowires. Excellent correlation between the model predictions and the data is obtained for surface-guided Au-catalyzed ZnSe and ZnS nanowires growing on both flat and faceted sapphire surfaces. These data are compared with those of nonplanar nanowire growth under similar conditions. The results indicate that, whereas nonplanar growth is usually dominated by surface diffusion of precursor adatoms over the nanowire walls, planar growth is dominated by surface diffusion over the substrate. This mechanism of planar nanowire growth can be extended to a broad range of material–substrate combinations for higher control toward large-scale integration into practical devices.


2012 ◽  
Vol 27 (11) ◽  
pp. 1445-1451 ◽  
Author(s):  
Mehmet Can Akgun ◽  
Yunus Eren Kalay ◽  
Husnu Emrah Unalan

Abstract


2012 ◽  
Vol 23 (11) ◽  
pp. 2065-2074 ◽  
Author(s):  
Khac An Dao ◽  
D. Khang Dao ◽  
T. Dai Nguyen ◽  
A. Tuan Phan ◽  
Hung Manh Do

2017 ◽  
Vol 214 (2) ◽  
pp. 1600480 ◽  
Author(s):  
Torunn Kjeldstad ◽  
Annett Thøgersen ◽  
Ola Nilsen ◽  
Edouard Monakhov ◽  
Augustinas Galeckas
Keyword(s):  

2012 ◽  
Vol 520 (14) ◽  
pp. 4626-4631 ◽  
Author(s):  
A. Marcu ◽  
L. Trupina ◽  
R. Zamani ◽  
J. Arbiol ◽  
C. Grigoriu ◽  
...  

2017 ◽  
Vol 33 (8) ◽  
pp. 850-855 ◽  
Author(s):  
Nannan Bi ◽  
Lei Zhang ◽  
Qiang Zheng ◽  
Fei Zhuge ◽  
Jiupeng Li ◽  
...  

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