Low-temperature fabrication of nanocrystalline silicon thin films on mechanically flexible substrates by vacuum arc discharge

2011 ◽  
Vol 26 (9) ◽  
pp. 1076-1080
Author(s):  
Jeff T.H. Tsai ◽  
Tsung-Ying Lin ◽  
Daniel H.C. Chua
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Arc Discharge ◽  
Nanocrystalline Silicon ◽  
Vacuum Arc ◽  
Flexible Substrates ◽  
Silicon Thin Films ◽  
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Abstract

Nanocrystalline silicon thin films deposited by high-frequency sputtering at low temperature

2005 ◽  
Vol 86 (1) ◽  
pp. 135-144 ◽  
Author(s):  
Z.X. Zhao ◽  
R.Q. Cui ◽  
F.Y. Meng ◽  
Z.B. Zhou ◽  
H.C. Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
High Frequency ◽  
Nanocrystalline Silicon ◽  
Silicon Thin Films

Nanocrystalline silicon thin films prepared by RF sputtering at low temperature and heterojunction solar cell

2004 ◽  
Vol 58 (30) ◽  
pp. 3963-3966 ◽  
Author(s):  
Z.X. Zhao ◽  
R.Q. Cui ◽  
F.Y. Meng ◽  
B.C. Zhao ◽  
H.C. Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Low Temperature ◽  
Rf Sputtering ◽  
Nanocrystalline Silicon ◽  
Heterojunction Solar Cell ◽  
Silicon Thin Films

Properties of low-temperature deposited ZnO thin films prepared by cathodic vacuum arc technology on different flexible substrates

2013 ◽  
Vol 539 ◽  
pp. 290-293 ◽  
Author(s):  
Cheng-Tang Pan ◽  
Ru-Yuan Yang ◽  
Min-Hang Weng ◽  
Chien-Wei Huang
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Zno Thin Films ◽  
Vacuum Arc ◽  
Flexible Substrates

Giant Anisotropy of Conductivity in Hydrogenated Nanocrystalline Silicon Thin Films

1998 ◽  
Vol 536 ◽  
Author(s):  
A. B. Pevtsov ◽  
N. A. Feoktistov ◽  
V. G. Golubev
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Percolation Theory ◽  
Nanocrystalline Silicon ◽  
Spatial Light Modulators ◽  
Light Emitting ◽  
Light Modulators ◽  
Silicon Thin Films ◽  
Longitudinal Conductivity ◽  
Transverse Conductivity

AbstractThin (<1000 Å) hydrogenated nanocrystalline silicon films are widely used in solar cells, light emitting diodes, and spatial light modulators. In this work the conductivity of doped and undoped amorphous-nanocrystalline silicon thin films is studied as a function of film thickness: a giant anisotropy of conductivity is established. The longitudinal conductivity decreases dramatically (by a factor of 109 − 1010) as the layer thickness is reduced from 1500 Å to 200 Å, while the transverse conductivity remains close to that of a doped a- Si:H. The data obtained are interpreted in terms of the percolation theory.

Plasma-assisted deposition of indium tin oxide thin films by sublimation using an anodic vacuum arc discharge

2021 ◽  
pp. 138731
Author(s):  
Bert Scheffel ◽  
Olaf Zywitzki ◽  
Thomas Preußner ◽  
Torsten Kopte
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Arc Discharge ◽  
Vacuum Arc ◽  
Oxide Thin Films
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