Multiferroic properties of Dy modified BiFeO3 thin films in comparison with Tb modified BiFeO3 thin films

2007 ◽  
Vol 22 (8) ◽  
pp. 2068-2073 ◽  
Author(s):  
V.R. Palkar ◽  
R. Anisha ◽  
R. Pinto ◽  
S. Bhattacharya
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Structural Alignment ◽  
Laser Deposition ◽  
Scanning Probe ◽  
Magnetic Domains ◽  
Multiferroic Properties ◽  
Si Substrates ◽  
Bifeo3 Thin Films ◽  
Polycrystalline Thin Films

Coexistence of ferroelectric and ferromagnetic order parameters was observed at room temperature in Bi0.6Dy0.3La0.1FeO3 thin films grown on Pt/TiO2/SiO2/Si substrates using a pulsed laser deposition technique similar to that for Bi0.6Tb0.3La0.1FeO3. The coexistence of ferroelectric and magnetic domains in specific spatial area of the thin film was also confirmed by scanning probe imaging. As expected, the magnetization values obtained for Bi0.6Dy0.3La0.1FeO3 bulk and thin films were higher than those of Bi0.6Tb0.3La0.1FeO3 bulk and polycrystalline thin films because the magnetic moment of Dy is higher than that of Tb. However, preferentially oriented thin films of Bi0.6Tb0.3La0.1FeO3 exhibit much higher magnetization values. It is speculated that structural alignment caused by stress developed during deposition of these films could be responsible for enhancement in magnetization.

Room temperature ferromagnetism and ferroelectricity in strained multiferroic BiFeO3 thin films on La0.7Sr0.3MnO3/SiO2/Si substrates

2017 ◽  
Vol 128 ◽  
pp. 451-464 ◽  
Author(s):  
M.C. Ramírez-Camacho ◽  
C.F. Sánchez-Valdés ◽  
J.J. Gervacio-Arciniega ◽  
R. Font ◽  
C. Ostos ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Si Substrates ◽  
Bifeo3 Thin Films ◽  
Multiferroic Bifeo3

Multiferroic properties of polycrystalline Zn-substituted BiFeO3 thin films prepared by pulsed laser deposition

2011 ◽  
Vol 11 (3) ◽  
pp. S270-S273 ◽  
Author(s):  
Jung Min Park ◽  
Fumiya Gotoda ◽  
Seiji Nakashima ◽  
Takeshi Kanashima ◽  
Masanori Okuyama
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Multiferroic Properties ◽  
Bifeo3 Thin Films

Study of Nanostructure Inclusion Effects on the Thermoelectric Behavior of Ca3Co4O9 Thin Films Grown by Pulsed Laser Deposition

2010 ◽  
Vol 1267 ◽  
Author(s):  
Evan Lyle Thomas ◽  
Xueyan Song ◽  
Yonggao Yan ◽  
Joshua Martin ◽  
Winnie Wong-Ng ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Axis Orientation ◽  
X Ray ◽  
Si Substrates ◽  
Factor Α ◽  
Scanning Electron

AbstractThe influence of incorporating nanoparticulate additions into Ca3Co4O9 (CCO) thin films prepared by pulsed laser deposition using composite targets of CCO and CCO + 3wt% BaZrO3 (BZO) on Si and LaAlO3 substrates is investigated. X-ray data and high-resolution scanning electron microscopy reveal preferred c-axis orientation of the films deposited on Si substrates with the formation of nanoparticles between ∼ 10 – 50 nm. Preliminary thermoelectric behavior shows an enhancement of the power factor α2/ρ at room temperature. The microstructure and thermoelectric behavior of the CCO films are compared to the BZO-doped films.

scholarly journals Temperature dependence of magnetic and magnetotransport properties in BiFeO3 thin films by pulsed laser deposition

2014 ◽  
Vol 1636 ◽  
Author(s):  
P. Tiberto ◽  
G. Barrera ◽  
F. Celegato ◽  
M. Coïsson ◽  
P. Rizzi ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Temperature Dependence ◽  
Pulsed Laser Deposition ◽  
Layer Thickness ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Bifeo3 Thin Films ◽  
Hard Magnetic Properties

ABSTRACTMultiferroic BFO/SRO/Si trilayers have been prepared by pulsed laser deposition in the form of thin films. As a function of the BFO layer thickness, magnetic and magneto-transport properties have been investigated at room temperature and down to 5 K. At low BFO layer thickness, a residual γ-Fe2O3 phase, which interacts interfacially with the SRO and BFO layers, is responsible for moderately hard magnetic properties of the film. On increasing BFO layer thickness, more homogeneous deposits are obtained with uniform magnetic and magneto-resistive properties.

Structural and multiferroic properties of BiFeO3 thin films at room temperature

2004 ◽  
Vol 96 (6) ◽  
pp. 3399-3403 ◽  
Author(s):  
Kwi Young Yun ◽  
Minoru Noda ◽  
Masanori Okuyama ◽  
Hiromasa Saeki ◽  
Hitoshi Tabata ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Multiferroic Properties ◽  
Bifeo3 Thin Films

scholarly journals Epitaxial Growth and Multiferroic Properties of (001)-Oriented BiFeO3-YMnO3 Films

2015 ◽  
Vol 2 (3-4) ◽  
pp. 157-162
Author(s):  
Peng-Xiao Nie ◽  
Yi-Ping Wang ◽  
Ying Yang ◽  
Guo-Liang Yuan ◽  
Wei Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Single Phase ◽  
Hysteresis Loops ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Leakage Currents ◽  
X Ray ◽  
Multiferroic Properties ◽  
Ferroelectric Hysteresis

Abstract In this paper, high-quality multiferroic (1-x)BiFeO3-xYMnO3 (x=0.05, 0.10, 0.15) thin films were successfully epitaxially grown on (001)SrTiO3 substrates with La0.67Sr0.33MnO3 buffered layers by pulsed laser deposition (PLD). X-ray diffraction shows the thin films are all single-phase perovskite with preferential orientation along the (001) direction. The (002) diffraction angles of thin films (from 0 to 0.15) shift to right, indicating the decrease of lattice parameters. All YMnO3-doped thin films exhibit strong upward self-poling via piezoelectric force microscope (PFM) measurement. Saturated ferroelectric hysteresis loops of thin films cannot be obtained even at the frequency of 50 kHz because of large leakage currents. It is noted that BFO-YMO thin films exhibit ferroelectricity considering the PFM and ferroelectric test. The magnetization measurements show that all BiFeO3-based films exhibit weak ferromagnetic behaviors with saturated magnetization at room temperature. The enhancement of magnetization was observed because of YMO doping, with the maximum saturation magnetization (M s) of 17.07 emu/cm3 in x=0.10 thin film.

Interactions Between Al and Cr Thin Films

1976 ◽  
Vol 34 ◽  
pp. 638-639
Author(s):  
R. M. Anderson ◽  
T. M. Reith ◽  
M. J. Sullivan ◽  
E. K. Brandis
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Vacuum System ◽  
Processing Temperature ◽  
Diffusion Couples ◽  
Electronic Circuits ◽  
Intermetallic Formation ◽  
Si Substrates ◽  
Aluminum Silicon

Thin films of aluminum or aluminum-silicon can be used in conjunction with thin films of chromium in integrated electronic circuits. For some applications, these films exhibit undesirable reactions; in particular, intermetallic formation below 500 C must be inhibited or prevented. The Al films, being the principal current carriers in interconnective metal applications, are usually much thicker than the Cr; so one might expect Al-rich intermetallics to form when the processing temperature goes out of control. Unfortunately, the JCPDS and the literature do not contain enough data on the Al-rich phases CrAl7 and Cr2Al11, and the determination of these data was a secondary aim of this work.To define a matrix of Cr-Al diffusion couples, Cr-Al films were deposited with two sets of variables: Al or Al-Si, and broken vacuum or single pumpdown. All films were deposited on 2-1/4-inch thermally oxidized Si substrates. A 500-Å layer of Cr was deposited at 120 Å/min on substrates at room temperature, in a vacuum system that had been pumped to 2 x 10-6 Torr. Then, with or without vacuum break, a 1000-Å layer of Al or Al-Si was deposited at 35 Å/s, with the substrates still at room temperature.

Interface motion during recrystallization of amorphous NiSi2

1990 ◽  
Vol 48 (4) ◽  
pp. 524-525
Author(s):  
J. L. Batstone ◽  
D.A. Smith
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Amorphous Film ◽  
Nucleation And Growth ◽  
Recrystallization Process ◽  
Amorphous Films ◽  
Interface Motion ◽  
Si Substrates ◽  
Spherical Caps ◽  
Crystal Interfaces

Recrystallization of amorphous NiSi2 involves nucleation and growth processes which can be studied dynamically in the electron microscope. Previous studies have shown thatCoSi2 recrystallises by nucleating spherical caps which then grow with a constant radial velocity. Coalescence results in the formation of hyperbolic grain boundaries. Nucleation of the isostructural NiSi2 results in small, approximately round grains with very rough amorphous/crystal interfaces. In this paper we show that the morphology of the rccrystallizcd film is dramatically affected by variations in the stoichiometry of the amorphous film.Thin films of NiSi2 were prepared by c-bcam deposition of Ni and Si onto Si3N4, windows supported by Si substrates at room temperature. The base pressure prior to deposition was 6 × 107 torr. In order to investigate the effect of stoichiomctry on the recrystallization process, the Ni/Si ratio was varied in the range NiSi1.8-2.4. The composition of the amorphous films was determined by Rutherford Backscattering.

Processing by Pulsed Laser Deposition and Structural, Morphological and Chemical Characterization of Bi-Pb-Sr-Ca-Cu-O and Bi-Pb-Sb-Sr-Ca-Cu-O Thin Films

2010 ◽  
Vol 75 ◽  
pp. 202-207
Author(s):  
Victor Ríos ◽  
Elvia Díaz-Valdés ◽  
Jorge Ricardo Aguilar ◽  
T.G. Kryshtab ◽  
Ciro Falcony
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Chemical Characterization ◽  
Laser Deposition ◽  
Nominal Composition ◽  
Deposition Parameters ◽  
The Relationship

Bi-Pb-Sr-Ca-Cu-O (BPSCCO) and Bi-Pb-Sb-Sr-Ca-Cu-O (BPSSCCO) thin films were grown on MgO single crystal substrates by pulsed laser deposition. The deposition was carried out at room temperature during 90 minutes. A Nd:YAG excimer laser ( = 355 nm) with a 2 J/pulse energy density operated at 30 Hz was used. The distance between the target and substrate was kept constant at 4,5 cm. Nominal composition of the targets was Bi1,6Pb0,4Sr2Ca2Cu3O and Bi1,6Pb0,4Sb0,1Sr2Ca2Cu3OSuperconducting targets were prepared following a state solid reaction. As-grown films were annealed at different conditions. As-grown and annealed films were characterized by XRD, FTIR, and SEM. The films were prepared applying an experimental design. The relationship among deposition parameters and their effect on the formation of superconducting Bi-system crystalline phases was studied.

Room-temperature ferromagnetism in (Ga, Mn)N thin films grown by pulsed laser deposition

2004 ◽  
Vol 36 (4-6) ◽  
pp. 403-408 ◽  
Author(s):  
D. O’Mahony ◽  
F. McGee ◽  
M. Venkatesan ◽  
J.G. Lunney ◽  
J.M.D. Coey
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Pulsed Laser ◽  
Laser Deposition
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