Electrical transport properties of size-tuned ZnO nanorods

2006 ◽  
Vol 21 (1) ◽  
pp. 132-136 ◽  
Author(s):  
Young Su Yun ◽  
Jae Young Park ◽  
Hwangyou Oh ◽  
Ju-Jin Kim ◽  
Sang Sub Kim
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Field Effect Transistors ◽  
Zno Nanorods ◽  
Chemical Vapor ◽  
Nanorod Arrays ◽  
Zno Nanorod Arrays ◽  
Electrical Transport Properties ◽  
Precursor Ratio ◽  
Zno Nras

Size-tuned ZnO nanorod arrays (NRAs), aligned well vertically and laterally, were synthesized by catalyst-free, metalorganic chemical vapor deposition on GaN-buffered Al2O3 (0001) substrates by adjusting the O/Zn precursor ratio in the reactor. Their electrical transport properties were investigated using field effect transistors based on individual ZnO nanorods. We find that the carrier concentrations and mobilities in the nanorods are not very sensitive to the change of the precursor ratio. This suggests that altering the precursor ratio is a way of fabricating size-tuned ZnO NRAs with quite consistent electrical properties.

Electrical transport properties of single ZnO nanorods

2004 ◽  
Vol 85 (11) ◽  
pp. 2002-2004 ◽  
Author(s):  
Y. W. Heo ◽  
L. C. Tien ◽  
D. P. Norton ◽  
B. S. Kang ◽  
F. Ren ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Zno Nanorods ◽  
Electrical Transport Properties

scholarly journals Imaging of local structures affecting electrical transport properties of large graphene sheets by lock-in thermography

2019 ◽  
Vol 5 (2) ◽  
pp. eaau3407 ◽  
Author(s):  
H. Nakajima ◽  
T. Morimoto ◽  
Y. Okigawa ◽  
T. Yamada ◽  
Y. Ikuta ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Chemical Vapor ◽  
Atomic Scale ◽  
Electrical Transport Properties ◽  
Large Area ◽  
Graphene Layers ◽  
Device Applications ◽  
Chemical Vapor Deposition Graphene ◽  
Lock In

The distribution of defects and dislocations in graphene layers has become a very important concern with regard to the electrical and electronic transport properties of device applications. Although several experiments have shown the influence of defects on the electrical properties of graphene, these studies were limited to measuring microscopic areas because of their long measurement times. Here, we successfully imaged various local defects in a large area of chemical vapor deposition graphene within a reasonable amount of time by using lock-in thermography (LIT). The differences in electrical resistance caused by the micrometer-scale defects, such as cracks and wrinkles, and atomic-scale domain boundaries were apparent as nonuniform Joule heating on polycrystalline and epitaxially grown graphene. The present results indicate that LIT can serve as a fast and effective method of evaluating the quality and uniformity of large graphene films for device applications.

Significant enhancement of the electrical transport properties of graphene films by controlling the surface roughness of Cu foils before and during chemical vapor deposition

Nanoscale ◽  
2014 ◽  
Vol 6 (21) ◽  
pp. 12943-12951 ◽  
Author(s):  
Dongmok Lee ◽  
Gi Duk Kwon ◽  
Jung Ho Kim ◽  
Eric Moyen ◽  
Young Hee Lee ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Transport Properties ◽  
Sheet Resistance ◽  
Vapor Deposition ◽  
Electrical Transport ◽  
Chemical Vapor ◽  
Significant Enhancement ◽  
Electrical Transport Properties ◽  
Graphene Films

Graphene resistivity decreases as the surface roughness of the copper foils decreases. Small grain polycrystalline graphene films grown on pre-annealed and electropolished copper exhibit a sheet resistance of 210 Ω □−1.

Ambipolar Transport Behaviors in Fullerene Peapod Transistors

2007 ◽  
Vol 121-123 ◽  
pp. 521-524 ◽  
Author(s):  
Ao Guo ◽  
Yun Yi Fu ◽  
Lun Hui Guan ◽  
Zu Jin Shi ◽  
Zhen Nan Gu ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Large Percentage ◽  
C60 Fullerene ◽  
Electrical Transport Properties ◽  
Ambipolar Behavior ◽  
Ambipolar Transport

The electrical transport properties of C70 and C60 fullerene peapods are investigated. We report the fabrications and performances of field-effect transistors (FETs) based on C70 and C60 fullerene peapods. A large percentage of the fullerene peapod-FETs we fabricated exhibit ambipolar characteristics with high Ion/Ioff ratio at room temperature in air. The origin of ambipolar behavior is qualitatively discussed.

scholarly journals Electrical transport properties and impedance analysis of Au/ZnO nanorods/ITO heterojunction device

Nano Express ◽  
2020 ◽  
Vol 1 (3) ◽  
pp. 030020
Author(s):  
Kuppuswamy Guruprasad ◽  
Gobinath Marappan ◽  
Surya Elangovan ◽  
Surya Velappa Jayaraman ◽  
K Kamala Bharathi ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Zno Nanorods ◽  
Impedance Analysis ◽  
Electrical Transport Properties ◽  
Heterojunction Device

Temperature-dependent electrical transport properties in graphene/Pb(Zr0.4Ti0.6)O3 field effect transistors

Carbon ◽  
2015 ◽  
Vol 93 ◽  
pp. 384-392 ◽  
Author(s):  
Xiao-Wen Zhang ◽  
Dan Xie ◽  
Jian-Long Xu ◽  
Cheng Zhang ◽  
Yi-Lin Sun ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Transport Properties ◽  
Temperature Dependent

Electrical transport properties of individual gallium nitride nanowires synthesized by chemical-vapor-deposition

2002 ◽  
Vol 80 (19) ◽  
pp. 3548-3550 ◽  
Author(s):  
Jae-Ryoung Kim ◽  
Hye Mi So ◽  
Jong Wan Park ◽  
Ju-Jin Kim ◽  
Jinhee Kim ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Transport Properties ◽  
Vapor Deposition ◽  
Electrical Transport ◽  
Chemical Vapor ◽  
Electrical Transport Properties

Synthesis of ZnO Nanorod Arrays Structure on Si Substrate

2015 ◽  
Vol 1131 ◽  
pp. 53-59
Author(s):  
Suttinart Noothongkaew ◽  
Supakorn Pukird ◽  
Worasak Sukkabot ◽  
Ki Seok An
Keyword(s):  
Zno Nanorods ◽  
Chemical Vapor ◽  
Yellow Emission ◽  
Growth Time ◽  
Zno Nanorod ◽  
Nanorod Arrays ◽  
Zno Nanorod Arrays ◽  
X Ray Diffraction ◽  
Vapor Deposition Technique ◽  
Condensation Growth

ZnO nanorod arrays were synthesized with simple chemical vapor deposition technique with template without using catalyst by controlling the growth time and condensation growth. The surface morphology of nanostructure were characterized by using field emission scanning electron microscopy (FE-SEM), we found that the ZnO nanorod arrays were uniformly covered on substrate. The extremely strong ZnO (0002) peaks were observed by using X-ray diffraction (XRD), shown the preferred (0001) orientation and high crystalline quality of the ZnO nanostructures. The optical properties were investigated by using photoluminescence (PL). These results showed the contribution of green-yellow emission attributed to the strong inner reflection and scattering. Our results indicating that the uniform ZnO nanorods arrays can be synthesized by using a simplified method. Furthermore, they will be implemented as application for nanodevice fabrication or for gas sensors and solar cells.

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