Analysis of Phase Transformation Kinetics by Intrinsic Stress Evolutions During the Isothermal Aging of Amorphous Ni(P) and Sn/Ni(P) Films

2004 ◽  
Vol 19 (4) ◽  
pp. 1257-1264 ◽  
Author(s):  
J.Y. Song ◽  
Jin Yu ◽  
T.Y. Lee

The kinetics for the crystallization of amorphous Ni(P) films and the formation of intermetallic compounds in Sn/Ni(P) films during isothermal aging treatment were studied with in situ intrinsic stress measurements. The intrinsic stress changes from crystallization were about 200 and 150 MPa for Ni(14P) and Ni(11.7P) films, respectively, and according to Johnson–Mehl–Avrami analysis, the Avrami exponents were about 3.6 ± 0.46 and 4.2 ± 0.39, and the activation energies were 242 and240 kJ/mol, respectively, for the crystallization of Ni(14P) and Ni(11.7P) films. The stress due to the formation of intermetallic compounds such as Ni3Sn4 and Ni3P in Sn/Ni(11.7P) films was about 320 MPa. Application of in situ stress measurementsto the empirical growth model during isothermal phase transformation of Sn/Ni(P) showed that the intermetallic compounds growth was interface reaction-controlled (n = 0.91 ± 0.08) in the early stage and then became diffusion-controlled (n =0.38 ± 0.01), and the activation energy was about 35.9 kJ/mol.

1991 ◽  
Vol 239 ◽  
Author(s):  
A. Mutscheller ◽  
L. A. Clevenger ◽  
J.M.E. Harper ◽  
C. Cabrai ◽  
K. Barmakt

AbstractWe demonstrate that the high temperature polymorphic tantalum phase transition from the tetragonal beta phase to the cubic alpha phase causes complete stress relaxation and a large decrease in the resistance of tantalum thin films. 100 nm beta tantalum thin films were deposited onto thermally oxidized <100> silicon wafers by dc magnetron sputtering with argon. In situ stress and resistance at temperature were measured during temperature-ramped annealing in purified He. Upon heating, films that were initially compressively stressed showed increasing compressive stress due to thermo-elastic deformation from 25 to 550°C, slight stress relief due to plastic deformation from 550 to 700°C and complete stress relief due to the beta to alpha phase transformation at approximately 700–800°C. Incomplete compressive stress relaxation was observed at high temperatures if the film was initially deposited in the alpha phase or if the beta phase did not completely transform into alpha by 800°C. This incomplete beta to alpha phase transition was most commonly observed on samples that had radio frequency substrate bias greater than -100 V. We conclude that the main stress relief mechanism for tantalum thin films is the beta to alpha phase transformation that occurs at 700 to 800°C.


2011 ◽  
Vol 291-294 ◽  
pp. 2139-2144
Author(s):  
Yong Shu Jiao ◽  
Mu Hui Fan ◽  
Li Juan Li ◽  
Zong Xi Cai

Based on the analytical solution for the stress field around an inclined borehole in an anisotropic medium, a computer program was developed and a serial parametric study was conducted. The effects of parameters such as degree of anisotropy, borehole inclination, bedding plane inclination and in-situ stress conditions on the stress distribution around a borehole were evaluated. The results showed that medium anisotropy has little effect on borehole fracture analysis at low borehole inclinations, but its influence becomes significant for highly inclined boreholes. As the degree of anisotropy varies the maximum shear stress changes remarkably. This indicates that the degree of anisotropy plays a role in the collapse failure of a borehole. The information generated in these studies can be used in predicting the fracture or collapse-initiating pressures.


2021 ◽  
Vol 1 ◽  
pp. 187-188
Author(s):  
Moritz Ziegler ◽  
Oliver Heidbach

Abstract. The stress state is a key component for the safety and stability of deep geological repositories for the storage of nuclear waste. For the stability assessment and prediction over the repository lifetime, the stress state is put in relation to the rock strength. This assessment requires knowledge of both the future stress changes and the current in situ stress state. Due to the limited number of in situ stress data records, 3D geomechanical models are used to obtain continuous stress field prediction. However, meaningful interpretation of the stress state model requires quantification of the associated uncertainties that result from the geological, stress and rock-property data. This would require thousands of simulations which in a high-resolution model is called an exhaustive approach. Here we present a feasible approach to reduce computation time significantly. The exhaustive approach quantifies uncertainties that are due to variabilities in stress data records. Therefore, all available data records within a model volume are used individually in separate simulations. Due to the inherent variability in the available data, each simulation represents one of many possible stress states supported by data. A combination of these simulations allows estimation of an individual probability density function for each component of the stress tensor represented by an average value and a standard deviation. If weighting of the data records can be performed, the standard deviation can usually be reduced and the significance of the model result is improved. Alternatively, a range of different stress states supported by the data can be provided with the benefit that no outliers are disregarded, but this comes at the cost of a loss in precision. Both approaches are only feasible since the number of stress data records is limited. However, it is indicated that large uncertainties are also introduced by variabilities in rock properties due to natural intra-lithological lateral variations that are not represented in the geomechanical model or due to measurement errors. Quantification of these uncertainties would result in an exhaustive approach with a high number of simulations, and we use an alternative, feasible approach. We use a generic model to quantify the stress state uncertainties from the model due to rock property variabilities. The main contributor is the Young's module, followed by the density and the Poisson ratio. They affect primarily the σxx and σyy components of the stress tensor, except for the density, which mainly affects the σzz component. Furthermore, a relative influence of the stress magnitudes, the tectonic stress regime and the absolute magnitude of rock properties is observed. We propose to use this information in a post-computation assignment of uncertainties to the individual components of the stress tensor. A range of lookup tables need to be generated that compile information on the effect of different variabilities in the rock properties on the components of the stress tensor in different tectonic settings. This allows feasible quantification of uncertainties in a geomechanical model and increases the significance of the model results significantly.


2007 ◽  
Vol 22 (7) ◽  
pp. 2025-2031 ◽  
Author(s):  
Jae Yong Song

In situ measurements of stresses due to the phase transformation in Sn and Ni(P) films were analyzed relating to the formation of layered intermetallic compounds such as Ni3Sn4, Ni3Sn2, Ni3P, and the crystallization of Ni(P) films. When Sn/Ni(11.7P) films were heated up to 480 °C, the first tensile stress developed due to formation of Ni3Sn4 and Ni3P around 220 °C, and the second one appeared at 335 °C due to formation of Ni3Sn2 as well as the self-crystallization of Ni(11.7P). For Sn/Ni(3P), a tensile stress developed mildly with the temperature between 300 and 410 °C due to formation of Ni3Sn2 and precipitation of Ni3P. The onset temperatures of self-crystallization of Ni(P) and Ni3P precipitation decreased due to the Ni–Sn reaction.


1997 ◽  
Vol 388 (1-3) ◽  
pp. 141-149 ◽  
Author(s):  
Wolfgang Haiss ◽  
Richard J. Nichols ◽  
Jürgen-Kurt Sass

1990 ◽  
Vol 188 ◽  
Author(s):  
J. F. Jongste ◽  
G. C. A. M. Janssen ◽  
S. Radelaar

In the microelectronics industry titanium disilicide (TiSi2) is used as a material for metallization and interconnection on silicon based integrated circuits. In the C54 structure (face centred orthorhombic) TiSi2 has important properties for application in electronic devices: low resistivity (16 μΩ cm), stability up to 900°C and compatibility with silicon processing. In thin films this phase is formed above approx. 700°C. However before this phase is formed, a metastable TiSi2 phase with the C49 (or ZrSi2) structure [1] is already formed at lower temperature. This C49 phase is unfavourable as metallization in IC applications because of the high resistivity (60–300 μΩ cm). From a technological point of view however it is important to realize that during the C49 formation the thin film is subject to a large change of the intrinsic stress. The occurrence of this stress can cause problems during semiconductor device fabrication. Gate oxides in MOSFETs (and other IC microstructures) may be deteriorated by stress. Also focussing problems in lithographic steps can arise because of wafer warpage. In this paper we present in situ stress measurements of the formation of TiSi2 C49 from Ti-Si multilayers. From these measurements the kinetics of the formation process is analyzed.


2020 ◽  
Vol 2020 ◽  
pp. 1-13
Author(s):  
Chunde Ma ◽  
Xibing Li ◽  
Jiangzhan Chen ◽  
Yanan Zhou ◽  
Sen Gao

As mining progresses to depth, engineering activities face the extreme challenge of high in situ stress. To efficiently measure the deep in situ stress before engineering excavation, an innovative deep in situ stress measurement method capable of the geological core ground reorientation technology and acoustic emission (AE) technology was proposed. With this method, nonorientation geological cores collected from the thousand-meter-deep borehole were reoriented based on the spatial spherical geometry model and borehole bending measurement principle. The distribution of deep in situ stress of an over-kilometer-deep shaft in the Xiangxi gold mine was investigated with real-time synchronized MTS 815 material testing machine and PCI-II AE instrument. The results show that the in situ stress changes from being dominated by horizontal stress to being dominated by vertical stress with depth. The horizontal maximum principal stress and vertical stress gradually increase with depth and reach a high-stress level (greater than 25 MPa) at a depth of 1000 m. The direction of the maximum principal stress is near the north. Meanwhile, to analyze the accuracy of the measured in situ stress comparatively, the stress relief measurements were performed at a depth of 655–958 m in the mine, using the Swedish LUT rock triaxial in situ stress measurement system. The distribution of deep in situ stress obtained by the stress relief method agrees well with that by the AE method, which proves the reliability of the AE in situ stress testing method based on the geological core ground reorientation technology.


Geophysics ◽  
2013 ◽  
Vol 78 (2) ◽  
pp. D65-D74 ◽  
Author(s):  
Colin M. Sayers

The elastic properties of reservoir rocks are important for geomechanics applications; the most important of which are: analysis of stress changes due to production, analysis of rock deformation and failure, wellbore trajectory optimization, and the design of hydraulic fractures. Organic-rich shales are often observed to be strongly anisotropic due to the partial alignment of anisotropic clay minerals and the bedding-parallel lamination of organic material within the shale. Neglecting shale anisotropy may lead to incorrect estimates of the in situ stress or stress changes resulting from production. As a result, isotropic models may fail to describe geomechanical behavior correctly. The distribution of the organic phase plays an important role in determining the elastic properties of organic-rich shales, and this has a significant effect on production-induced stress changes. The presence of kerogen leads to a decrease in all of the elastic moduli, and has a significant effect on the geomechanical behavior of shales. The change in horizontal effective stress for a given change in pore pressure resulting from production is greater for kerogen-rich shales, and the neglect of anisotropy in predicting such stress changes may lead to significant errors.


1990 ◽  
Vol 202 ◽  
Author(s):  
G. J. Leusink ◽  
C. Th. H. Heerkens ◽  
G. C. A. M. Janssen ◽  
S. Radelaar

ABSTRACTWe present measurements on the intrinsic stress developing during chemical vapour deposition of W and WSi2 from the reaction between WF6 and Si (100). It will be shown that depending on temperature and WF6 partial pressure, three growth modes, corresponding with three different stress developments, can be distinguished. The results can be explained with three basic processes. The intrinsic tensile stress during the deposition of self limited W can be as high as 2 GPa.


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