Composition and Growth-Temperature Effect on the Microstructure of Epitaxial La1−x Srx MnO3 (x = 0, 0.2) Thin Films on (001) LaAlO3

2003 ◽  
Vol 18 (11) ◽  
pp. 2556-2561 ◽  
Author(s):  
J.C. Jiang ◽  
E.I. Meletis ◽  
K.I. Gnanasekar
Keyword(s):  
Thin Films ◽  
Size Distribution ◽  
Cross Section ◽  
Growth Temperature ◽  
Single Layer ◽  
Epitaxial Films ◽  
Narrow Size Distribution ◽  
Perovskite Layer ◽  
Plan View ◽  
Transmission Electron

La0.8Sr0.2MnO3 (LSMO) and LaMnO3 (LMO) thin films epitaxially grown on (001) LaAlO3 substrate at 700 and 800°C were studied using cross-section and plan-view transmission electron microscopy. In both LSMO and LMO films deposited at 700°C, a two-layered structure was observed: a continuous cubic perovskite layer epitaxially grown on the substrate followed by epitaxially grown orthorhombic column nanostructures. The orthogonal nano columns in LSMO were very well defined with a narrow size distribution. The LMO films exhibited a somewhat distorted orthogonal shape for the nanostructured columns and a wider size distribution. LSMO and LMO epitaxial films deposited at 800°C consisted of only a continuous single layer of cubic perovskite. These results reveal that formation of epitaxial column nanostructures in the La1-xSrxMnO3 thin films strongly depends on the growth temperature. Sr substitution on La sites in La1-xSrxMnO3 can improve uniformity of column size distribution and perfection of the orthogonal shape of nano columns.

TEM Characterization of As-Deposited and Annealed Ni/Al Multilayer Thin Film

2010 ◽  
Vol 16 (6) ◽  
pp. 662-669 ◽  
Author(s):  
S. Simões ◽  
F. Viana ◽  
A.S. Ramos ◽  
M.T. Vieira ◽  
M.F. Vieira
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Ion Beam ◽  
Microstructural Characterization ◽  
Multilayer Thin Films ◽  
Tem Analysis ◽  
Plan View ◽  
Transmission Electron

AbstractReactive multilayer thin films that undergo highly exothermic reactions are attractive choices for applications in ignition, propulsion, and joining systems. Ni/Al reactive multilayer thin films were deposited by dc magnetron sputtering with a period of 14 nm. The microstructure of the as-deposited and heat-treated Ni/Al multilayers was studied by transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) in plan view and in cross section. The cross-section samples for TEM and STEM were prepared by focused ion beam lift-out technique. TEM analysis indicates that the as-deposited samples were composed of Ni and Al. High-resolution TEM images reveal the presence of NiAl in small localized regions. Microstructural characterization shows that heat treating at 450 and 700°C transforms the Ni/Al multilayered structure into equiaxed NiAl fine grains.

Defect Generation And Evolution In The Hydrothermal Growth Of Epitaxial BaTiO3 Thin Films

1997 ◽  
Vol 474 ◽  
Author(s):  
L. Zhao ◽  
A. T. Chien ◽  
F. F. Lange ◽  
J. S. Speck
Keyword(s):  
Thin Films ◽  
Cross Section ◽  
Interfacial Layer ◽  
Dislocation Network ◽  
Misfit Dislocations ◽  
Plan View ◽  
Transmission Electron ◽  
Defects Analysis ◽  
Film Substrate ◽  
Growth Evolution

ABSTRACTThe structure of epitaxial BaTiO3 thin films prepared by hydrothermal synthesis on (001) SrTiO3 substrates was studied by transmission electron microscopy (TEM). The growth evolution was followed from initial island formation, through island impingement and fusion. Plan view and cross-section imaging demonstrated that the films grew by an unusual islanding mechanism. Electron diffraction showed the islands and the fully formed film are single crystal with mosaic character and in all cases strain relaxed. Cross-section TEM of the early growth films showed a several monolayer thick interfacial layer and the film/substrate region had no misfit dislocations. In the fully formed films, this interfacial layer was not observed, however a clear misfit dislocation network was observed. Defects analysis shows that the misfit dislocations have pure edge character with <100> Une directions, and <010> Burgers vectors (parallel to the film/substrate interface).

Growth of CeO2 thin films deposited on biaxially textured nickel substrates

2003 ◽  
Vol 18 (1) ◽  
pp. 14-26 ◽  
Author(s):  
D. Eyidi ◽  
M. D. Croitoru ◽  
O. Eibl ◽  
R. Nemetschek ◽  
W. Prusseit
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Film Surface ◽  
Buffer Layers ◽  
Plan View ◽  
Ni Substrate ◽  
Transmission Electron ◽  
Nickel Substrates

CeO2 films are technologically important as buffer layers for the integration of superconducting YBa2Cu3O7−δ films on {100}-biaxially textured Ni substrates, yielding a Ni–CeO2–YBa2Cu3O7−δ layer sequence. The Ni–CeO2 interface is a metal–oxide interface, and the misfit between substrate and film is about 9%. An epitaxial growth model was suggested for this system in the literature. The investigated films were deposited by a reactive thermal evaporation process at substrate temperatures of 650–670 °C with a thickness of 100 nm after deposition. The CeO2 films were characterized by plan-view and cross-section transmission electron microscopy, atomic force microscopy, and scanning electron microscopy. The CeO2 films had a strong {100} biaxial texture with a roughness of approximately 90 nm. No intermediate layer could be found by cross-section transmission electron microscopy at the Ni–CeO2 interface. The films had columnar grains with diameters of 20–50 nm, much smaller than the grain size of the Ni substrate, which was larger than 1 μm. Small-angle grain boundaries and small amounts of 〈111〉-oriented grains were evidenced in plan-view samples by diffraction patterns. The Moiré fringes technique was applied and was ideally suited to image the small rotations (≤3°) of the small CeO2 grains with respect to the Ni substrate. These small rotations of small grains showed that the growth was nonepitaxial, however, biaxially textured. In the CeO2 film samples, nanovoids 5–10 nm in size were observed and were mostly located close to the film surface. A model for the growth of CeO2 thin films on nickel substrates can be proposed on the basis of our results.

Preparation of cross section samples of ferrimagnetic iron garnet thin films for EM structural characterization

1995 ◽  
Vol 53 ◽  
pp. 514-515
Author(s):  
B.M. Simion ◽  
R. Ramesh ◽  
G. Thomas
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Cross Section ◽  
Structural Characterization ◽  
Microstructural Analysis ◽  
Single Layer ◽  
Green Laser ◽  
Transmission Electron ◽  
Good Potential ◽  
Iron Garnet

Ferrimagnetic iron garnet thin film multilayered heterostructures were deposited by pulsed laser deposition on paramagnetic [111]-oriented single crystalline GdGa-garnet (GGG) substrates. Bismuth and rare-earth substituted iron garnet thin films are being presently considered as good potential candidates for the next generation of thermo-magneto-optical (TMO) permanent memories, due to their improved magneto-optical (MO) response to the green laser radiation. As reported previously, improved magnetic and MO properties were shown by multilayered Y3Fe5O12/Bi3Fe5O12 (YIG/BIG) and Y3Fe5O12/Eu1Bi2Fe5Ol2 (YIG/EBIG) heterostructures when compared to their single layer counterparts. The present study tries to elucidate the relationship between the films microstructure and their improved properties. Along with x-ray structural characterization, scanning electron microscopy for topographical characterization and analytical transmission electron microscopy for chemical and microstructural analysis are being used.Due to the brittleness of both films and substrates, conventional cross section sample preparation becomes extremely difficult. Samples under roughly 20 μm thickness break under the lowest load of the dimpler.

MOCVD Growth and Structure of PbTiO3 Thin Films

1993 ◽  
Vol 310 ◽  
Author(s):  
Y. Gao ◽  
G. Bai ◽  
K. L. Merkle ◽  
H. L. M. Chang ◽  
D. J. Lam
Keyword(s):  
Thin Films ◽  
Layer Structure ◽  
Single Layer ◽  
Bottom Layer ◽  
Epitaxial Films ◽  
Optimum Conditions ◽  
X Ray Diffraction ◽  
Mocvd Growth ◽  
Transmission Electron ◽  
Oriented Layers

AbstractPbTiO3 thin films grown on (001)MgO and (110)MgO by MOCVD have been characterized by x-ray diffraction and transmission electron microscopy. The PbTiO3 films deposited on (001)MgO under the optimum conditions always show a bi-layer structure. The top layer of the films near the free surface is c-axis oriented with the orientation relationship (001)[100]PbTiO3∥(001)[100]MgO. The bottom layer of the films near the substrate is a-axis oriented with (100)[001]PbTiO3∥(001)[100]MgO. 90° domains were observed, but only in the caxis oriented layers. The thickness of the a-axis oriented layers near the substrate decreases with decreasing the cooling rate. PbTiO3 films deposited on (110) MgO, however, are single-layer, epitaxial films with (101)[001]PbTiO3∥(110)[001]MgO.

Microstructure of SrTiO3 Thin Films as Single Layer and Incorporated in Yba2Cu3O7-x/SrTiO3 Multilayers

1995 ◽  
Vol 401 ◽  
Author(s):  
L. Ryen ◽  
E. Olssoni ◽  
L. D. Madsen ◽  
C. N. L. Johnson ◽  
X. Wang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Lattice Mismatch ◽  
Single Layer ◽  
Transmission Electron ◽  
Tilt Boundaries ◽  
Interfacial Dislocations ◽  
The Individual ◽  
Film Substrate

AbstractEpitaxial single layer (001) SrTiO3 films and an epitaxial Yba2Cu3O7-x/SrTiO3 multilayer were dc and rf sputtered on (110)rhombohedral LaAIO3 substrates. The microstructure of the films was characterised using transmission electron microscopy. The single layer SrTiO3 films exhibited different columnar morphologies. The column boundaries were due to the lattice mismatch between film and substrate. The boundaries were associated with interfacial dislocations at the film/substrate interface, where the dislocations relaxed the strain in the a, b plane. The columns consisted of individual subgrains. These subgrains were misoriented with respect to each other, with different in-plane orientations and different tilts of the (001) planes. The subgrain boundaries were antiphase or tilt boundaries.The individual layers of the Yba2Cu3O7-x/SrTiO3 multilayer were relatively uniform. A distortion of the SrTiO3 unit cell of 0.9% in the ‘001’ direction and a Sr/Ti ratio of 0.62±0.04 was observed, both in correspondence with the single layer SrTiO3 films. Areas with different tilt of the (001)-planes were also present, within each individual SrTiO3 layer.

Three Dimensional Dislocation Analysis of Threading Mixed Dislocation Using Multi Directional Scanning Transmission Electron Microscopy

2017 ◽  
Vol 897 ◽  
pp. 173-176 ◽  
Author(s):  
Takahiro Sato ◽  
Yuya Suzuki ◽  
Hiroyuki Ito ◽  
Toshiyuki Isshiki ◽  
Kuniyasu Nakamura
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Scanning Transmission Electron Microscopy ◽  
Plan View ◽  
Burgers Vector ◽  
Scanning Transmission Electron ◽  
Mixed Dislocation ◽  
Transmission Electron ◽  
Scanning Transmission

The recently developed multi directional scanning transmission electron microscopy (MD-STEM) technique has been applied to exactly determine the Burgers vector (b) and dislocation vector (u) of a threading mixed dislocation in a silicon carbide (SiC) as-epitaxial wafer. This technique utilizes repeated focused ion beam (FIB) milling and STEM observation of the same dislocation from three orthogonal directions (cross-section, plan-view, cross-section). Cross section STEM observation in the [1-100] viewing direction showed that the burgers vector have a and c components. Subsequent plan view STEM observation in the [000-1] direction indicated that the b=[u -2uuw] (u≠0 and w≠0). Final cross section STEM observation in the [11-20] direction confirmed that the dislocation was an extended dislocation, with the Burgers vector experimentally found to be b = [1-210]a/3 + [0001]c which decomposes into two partial dislocations of bp1 = [0-110]a/3 + [0001]c/2 and bp2 = [1-100]a/3 + [0001]c/2. The dislocation vector u is [-12-10]a/3 + [0001]c. This technique is an effective method to analyze the dislocation characteristics of power electronics devices.

An Experimental Study on Synthesis and Characterization of Silica Nanoparticles Prepared by Sol-Gel Method

2007 ◽  
Vol 553 ◽  
pp. 245-251
Author(s):  
Ali Shokuhfar ◽  
Tolou Shokuhfar ◽  
M. Ghazinejad ◽  
R. Babazade ◽  
S. Tabatabae
Keyword(s):  
Electron Microscopy ◽  
Silica Nanoparticles ◽  
Size Distribution ◽  
Sol Gel ◽  
Sio2 Nanoparticles ◽  
Industrial Applications ◽  
Silica Particles ◽  
Narrow Size Distribution ◽  
Molar Ratios ◽  
Transmission Electron

Monodispersed nanometer-sized particles proved to be very important and advantageous in many industrial applications. One of the notable groups of these particles is silica (SiO2) nanoparticles which are widely utilized in developing numerous products such as electrical and thermal insulators, humidity sensors, varnish, etc. Since the quality of some of these products depends highly on the purity and size distribution of the silica particles, it is necessary to produce silica nanoparticles of narrow size distribution and very high purity. In this research silica nanoparticles, with a relatively narrow size distribution, have been synthesized via the hydrolysis reaction of tetraethoxisilane (TEOS) in the solution of deionized water and ethanol (C2H5OH), and in the presence of ammonia (NH3) as a catalyst. The nature, morphology and the size of the silica particles has been studied using Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and X-ray diffraction. Results indicate that the morphology, structure and the diameter of silica particles depend strongly on the molar ratios of the reactants.

Cross Section and Plan View STEM Analysis on Identical Conversion Point of Basal Plane Dislocation to Threading Edge Dislocation of 4H-SiC

2016 ◽  
Vol 858 ◽  
pp. 397-400
Author(s):  
Takahiro Sato ◽  
Yoshihisa Orai ◽  
Toshiyuki Isshiki ◽  
Munetoshi Fukui ◽  
Kuniyasu Nakamura
Keyword(s):  
Cross Section ◽  
Edge Dislocation ◽  
Basal Plane ◽  
Dislocation Line ◽  
Plan View ◽  
Conversion Point ◽  
Partial Dislocations ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Basal Plane Dislocation

Cross section and plan view dislocation analysis at the conversion point of a basal plane dislocation (BPD) into a threading edge dislocation (TED) in a silicon carbide epitaxial wafer was developed using a newly modified multi directional scanning transmission electron microscopy (STEM) technique. Cross section STEM observation in the [-1100] direction, found a conversion point located 5.5 μm from the surface, where two dislocation lines in the basal plane convert into one dislocation line nearly along the hexagonal c axis was observed. Using plan view STEM observation along the [000-1] direction, it is confirmed that the dislocation lines are two partial dislocations of a BPD and one TED by g·b invisibility analysis. This new technique is a powerful tool to evaluate the fundamental dislocation characteristics of power electronics devices.

Two-Dimensional Modulated Interfacial Structures of Highly Epitaxial Ferromagnetic (La,Ca)MnO3 and Ferroelectric (Pb,Sr)TiO3 Thin Films on (001) MgO

2008 ◽  
Vol 3 ◽  
pp. 59-66 ◽  
Author(s):  
Jiechao Jiang ◽  
J. He ◽  
Efstathios I. Meletis ◽  
Jian Liu ◽  
Z. Yuan ◽  
...  
Keyword(s):  
Thin Films ◽  
Cross Section ◽  
Lattice Mismatch ◽  
Rock Type ◽  
Two Dimensional ◽  
Salt Rock ◽  
Double Diffraction ◽  
Tem Analysis ◽  
Plan View ◽  
Mgo Substrate

Two-dimensional in-plane interface structures of highly epitaxial perovskite (La,Ca)MnO3 (LCMO) and (Pb,Sr)TiO3 (PSTO) thin films on salt-rock type MgO substrate were studied using Transmission Electron Microscopy (TEM). Cross-section TEM studies revealed that both LCMO and PSTO films are good single crystal quality and have atomic sharp interface with respect to the MgO substrate with -6.4% and -6.2% lattice mismatch, respectively. Electron Diffraction Patterns (EDPs) of plan-view LCMO/MgO and PSTO/MgO interfaces exhibit double diffraction spots. An analytical approach was employed using double diffraction to study the two-dimensional in-plane interfaces of perovskite structure films on the salt-rock type substrate. The lattice mismatch near the interface regions was determined using EDPs of the plan-view interfaces and found to be -8.0% for LCMO/MgO and -7.14% for PSTO. Both latter values are larger than those obtained using cross-section TEM. Studies of the sharpness of double diffraction spots and plan-view high resolution (HR) TEM brought a conclusion that the PSTO film is well commensurate with the MgO substrate over large areas, whereas LCMO film is only locally commensurate with the substrate. These studies provide additional evidence to our previous observations that plan-view TEM of the interface is able to provide critical and valuable information that is lacking from the cross-section TEM analysis.

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