Compound growth and microstructure of carbon nanotube

2003 ◽  
Vol 18 (10) ◽  
pp. 2459-2463 ◽  
Author(s):  
Zaoli Zhang ◽  
Lian Ouyang ◽  
Zujin Shi ◽  
Zhennan Gu
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Carbon Nanotube ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Multiwalled Carbon ◽  
Catalyst Nanoparticles ◽  
Single Walled Carbon Nanotube ◽  
Fe Catalyst ◽  
Transmission Electron

The compound growth of single-walled carbon nanotube (SWCNT) and multiwalled carbon nanotube (MWCNT), which formed a nanotube cable, was achieved by the chemical vapor deposition of natural gas on an Fe catalyst supported on SiO2–Al2O3 hybrid materials at 950 °C. The microstructure of nanotubes was characterized by high-resolution transmission electron microscopy (HRTEM). The SWCNTs encapsulated inside MWCNTs can be two, three, or even more in quantity with a diameter range from 1.0 nm to 2.0 nm. The diameter of SWCNT is controlled by the size of the catalyst nanoparticles. Some bundles of SWCNT and double-walled nanotubes were also found. The possible mechanism of compound growth is briefly discussed.

The Synthesis of Nitrigen Doped Carbon Nanotube with Different Catalyst

2011 ◽  
Vol 694 ◽  
pp. 266-269 ◽  
Author(s):  
Hai Ying Jin ◽  
Nai Ci Bing ◽  
Ling Ling Wang ◽  
Li Jun Wang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Carbon Nanotube ◽  
High Resolution ◽  
Vapor Deposition ◽  
Molecular Sieve ◽  
Chemical Vapor ◽  
Nitrogen Doped ◽  
Transmission Electron ◽  
Nitrogen Doped Carbon

Bamboo-like nitrogen-doped carbon (CNX) nanotubes have been synthesized by chemical vapor deposition at high reaction temperature of 850°C. The diethylamine has been used as carbon source and Fe/SBA-15 and Ni/SBA-15 have been used as molecular sieve catalyst. Transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM) observations showed that the diameter and the wall thickness of CNx nanotubes were increased with the change of catalyst from Fe/SBA-15 to Ni/SBA-15.

Transmission Electron Microscopy (TEM) Specimen Preparation Technique using Focused Ion Beam (FIB): Application to Material Characterization of Chemical Vapor Deposition of Tungsten (W) and Tungsten Silicides (WSix)

1997 ◽  
Author(s):  
K. Doong ◽  
J.-M. Fu ◽  
Y.-C. Huang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Transmission Electron

Abstract The specimen preparation technique using focused ion beam (FIB) to generate cross-sectional transmission electron microscopy (XTEM) samples of chemical vapor deposition (CVD) of Tungsten-plug (W-plug) and Tungsten Silicides (WSix) was studied. Using the combination method including two axes tilting[l], gas enhanced focused ion beam milling[2] and sacrificial metal coating on both sides of electron transmission membrane[3], it was possible to prepare a sample with minimal thickness (less than 1000 A) to get high spatial resolution in TEM observation. Based on this novel thinning technique, some applications such as XTEM observation of W-plug with different aspect ratio (I - 6), and the grain structure of CVD W-plug and CVD WSix were done. Also the problems and artifacts of XTEM sample preparation of high Z-factor material such as CVD W-plug and CVD WSix were given and the ways to avoid or minimize them were suggested.

Understanding the Growth Mechanisms of Tin Oxide Nanowires by Chemical Vapor Deposition

2021 ◽  
Vol 21 (4) ◽  
pp. 2538-2544
Author(s):  
Nguyen Minh Hieu ◽  
Nguyen Hoang Hai ◽  
Mai Anh Tuan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Mapping ◽  
X Ray Diffraction ◽  
Lattice Constants ◽  
Transmission Electron ◽  
Scanning Transmission

Tin oxides nanowires were prepared by chemical vapor deposition using shadow mask. X-ray diffraction indicated that the products were tetragonal having crystalline structure with lattice constants a = 0.474 nm and c = 0.318 nm. The high-resolution transmission electron microscopy revealed that inter planar spacing is 0.25 nm. The results chemical mapping in scanning transmission electron microscopy so that the two elements of Oxygen and Tin are distributed very homogeneously in nanowires and exhibit no apparent elements separation. A bottom-up mechanism for SnO2 growth process has been proposed to explain the morphology of SnO2 nanowires.

Microstructures of GaN Films Grown on a LiGaO2 New Substrate by Metalorganic Chemical Vapor Deposition

1997 ◽  
Vol 468 ◽  
Author(s):  
Jing-Hong Li ◽  
Olga M. Kryliouk ◽  
Paul H. Holloway ◽  
Timothy J. Anderson ◽  
Kevin S. Jones
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Threading Dislocations ◽  
Transmission Electron ◽  
Metalorganic Chemical

ABSTRACTMicrostructures of GaN films grown on the LiGaO2 by metalorganic chemical vapor deposition (MOCVD) have been characterized by transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). TEM and HRTEM results show that high quality single-crystal wurtzite GaN films have been deposited on the LiGaO2 and that the GaN film and the LiGaO2 have the following orientation relationship: (2110)(0002)GaN ̂ (002)LiGaO2 ^ 5–8°. A higher density of threading dislocations and stacking faults have been observed near the GáN/LiGaO2 interface, even though the lattice mismatch of GaN to LiGaO2 is only ∼1%. Threading dislocations with burgers vector b=<0001> and b=a/3<1120> are predominant in the GaN films. Also the GaN films contain some columnar inversion domain boundaries (IDBs). Both TEM and HRTEM results reveal that there is an unexpected amorphous or nano-crystalline inter-layer between the GaN and the LiGaO2 with a thickness of 50–100 nm.

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