Dependence of fracture toughness on annealing temperature in Pb(Zr0.52Ti0.48)O3 thin films produced by metal organic decomposition

2003 ◽  
Vol 18 (3) ◽  
pp. 578-584 ◽  
Author(s):  
X. J. Zheng ◽  
Y. C. Zhou ◽  
H. Zhong
Keyword(s):  
Thin Films ◽  
Fracture Toughness ◽  
Lead Zirconate Titanate ◽  
Annealing Temperature ◽  
Indentation Load ◽  
Pzt Thin Films ◽  
Metal Organic ◽  
Annealing Procedure ◽  
Crystalline Microstructure ◽  
Organic Decomposition

Lead zirconate titanate Pb(Zr0.52Ti0.48)O3 (PZT) thin films were grown on Pt/Ti/Si(001) by metal organic decomposition (MOD). The effects of the annealing procedure on the crystalline microstructure, hysteresis loops, and fracture toughness of PZT thin films were investigated by x-ray diffraction, RT66A analyzer, and Vickers indentation method, respectively. It was found that the fracture toughness, crystalline microstructure, and ferroelectric properties depend on the annealing procedure. When the annealing temperature is in the range of 600–750 °C, the higher the annealing temperature, the better the crystalline quality. The fracture pattern diagram, as a function of indentation load and annealing temperature, was introduced to describe the fracture characteristics of PZT thin film induced by indentation load. With the increase of annealing temperature from 600 °C to 750 °C, the fracture toughness of PZT thin films decreased from 0.492 MPa m1/2 to 0.478 MPa m1/2.

Electrode Contacts on PZT Thin Films and Their Influence on Fatigue Properties

1994 ◽  
Vol 361 ◽  
Author(s):  
J.J. Lee ◽  
C.L. Thio ◽  
M. Bhattacharya ◽  
S.B. Desu
Keyword(s):  
Thin Films ◽  
Dielectric Permittivity ◽  
Lead Zirconate Titanate ◽  
Interfacial Layer ◽  
Ruthenium Oxide ◽  
Lead Zirconate ◽  
Fatigue Properties ◽  
Pzt Thin Films ◽  
Pzt Film ◽  
Metal Organic

ABSTRACTThe degradation (fatigue) of dielectric properties of ferroelectric PZT (Lead Zirconate Titanate) thin films during cycling was investigated. PZT thin films were fabricated by metal-organic decomposition (MOD). Samples with electrodes of platinum (Pt) and ruthenium oxide (RuO2) were studied. The interfacial capacitance (if any) at the Pt/PZT and RuO2/PZT interfaces was determined from the thickness dependence of low-field dielectric permittivity (εr) measurements. It was observed that a low εrlayer existed at the Pt/PZT interface but not at the RuO2/PZT interface. The dielectric permittivity of this interfacial layer degrades with increasing fatigue while the εrof the bulk PZT film remains constant. This indicates that fatigue increases the interfacial layer thickness but does not change the bulk properties. For the capacitors with RuO2/PZT/RuO2 structure, however, the εdoes not change with thickness and fatigue cycling. This implies no interfacial layer exists between RuO2/PZT and, therefore, no fatigue was observed. Additionally, an impedance spectroscopie technique has been proposed for possible use in analyzing the nature of the interfacial layer during the fatigue process.

Effect of Annealing Temperature on the Structures and Properties of Bi4.15Nd0.85Ti3FeO15 Thin Films

2014 ◽  
Vol 633 ◽  
pp. 290-294
Author(s):  
Yu Pei ◽  
Feng Ming Pan
Keyword(s):  
Thin Films ◽  
Fatigue Resistance ◽  
Decomposition Method ◽  
Room Temperature ◽  
Remanent Polarization ◽  
Annealing Temperature ◽  
Si Substrates ◽  
Structures And Properties ◽  
Metal Organic ◽  
Organic Decomposition

To investigate the effect of annealing temperature on the structures and properties of Bi4.15Nd0.85Ti3FeO15 (BNTF), their thin films with four perovskite slabs were deposited on Pt/Ti/SiO2/Si substrates by the metal-organic decomposition method. Good remanent polarization and excellent fatigue resistance were observed at room temperature. The BNTF thin films annealed at 780°C presented better ferroelectricity than those annealed at 700°C-780°C. Ferromagnetic of BNTF thin films was not observed at room temperature.

TEM Analysis of the Nanostructure of Pb(Mg1/3Nb2/3)O3 Thin Films by MOD Method

2013 ◽  
Vol 582 ◽  
pp. 19-22 ◽  
Author(s):  
Yoshihiro Misaka ◽  
Takanori Kiguchi ◽  
Kazuhisa Sato ◽  
T. Nishimatsu ◽  
Tomoaki Yamada ◽  
...  
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Film Surface ◽  
Epitaxial Thin Films ◽  
Tem Analysis ◽  
Metal Organic ◽  
Organic Decomposition

Pb (Mg1/3Nb2/3)O3(PMN) thin films were prepared by metal organic decomposition (MOD) method. The effects of Pb content and annealing temperature on the crystallinity of PMN epitaxial thin films were investigated. The 10at% Pb-excess PMN film annealed at 973 K with facing the film surface against another STO substrate have improved its crystallinity compared with those under another conditions.

Charge Trapping and Degradation Properties of PZT Thin Films for MEMS

1996 ◽  
Vol 444 ◽  
Author(s):  
Hyeon-Seag Kim ◽  
D. L. Polla ◽  
S. A. Campbell
Keyword(s):  
Thin Films ◽  
Loss Factor ◽  
High Field ◽  
Microelectromechanical Systems ◽  
Charge Trapping ◽  
Metal Organic ◽  
Electrical Reliability ◽  
Silicon Based ◽  
Degradation Properties ◽  
Organic Decomposition

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).

Microstructure of Solution-Processed Lead Zirconate Titanate (PZT) Thin Films

1991 ◽  
Vol 74 (6) ◽  
pp. 1455-1458 ◽  
Author(s):  
Altaf H. Carim ◽  
Bruce A. Tuttle ◽  
Daniel H. Doughty ◽  
Sheri L. Martinez
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Lead Zirconate ◽  
Solution Processed ◽  
Pzt Thin Films ◽  
Zirconate Titanate
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