X-ray photoelectron spectroscopy characterization and morphology of MgO thin films grown on single-crystalline diamond (100)

2002 ◽  
Vol 17 (8) ◽  
pp. 1914-1922 ◽  
Author(s):  
S. M. Lee ◽  
T. Ito ◽  
H. Murakami
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Growth Front ◽  
Electron Beam Evaporation ◽  
Single Crystalline ◽  
X Ray ◽  
Force Microscopy ◽  
Magnesium Peroxide ◽  
Surface Morphologies

The morphology and composition of MgO films grown on single-crystalline diamond (100) have been studied. MgO thin films were deposited in the substrate temperature range from room temperature (RT) to 723 K by means of electron beam evaporation using a MgO powder source. Atomic force microscopy images indicated that the film grown at RT without O2 supply was relatively uniform and flat whereas that deposited in oxygen ambient yielded higher growth rates and rough surface morphologies. X-ray photoelectron spectroscopy analyses demonstrate that the MgO film deposited at RT without O2 has the composition closest to that of the stoichiometric MgO and that a thin contaminant layer composed mainly of magnesium peroxide (before etching) or hydroxide (after etching) was unintentionally formed on the film surface, respectively.These results will be discussed in relation to the interaction among the evaporated species and intentionally supplied oxygen molecules at the growth front as well as the interfacial energy between diamond and MgO.

Deposition and Characterization of MgO Thin Films on SrTiO3 and LaAlO3 Substrates

1992 ◽  
Vol 280 ◽  
Author(s):  
Bertha P. Chang ◽  
Neville Sonnenberg ◽  
Michael J. Cima
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Grazing Incidence ◽  
Rf Magnetron Sputtering ◽  
Electron Beam Evaporation ◽  
Substrate Material ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Surface Morphologies

ABSTRACTMgO thin films have been deposited on SrTiO3 and LaA1O3 substrates using both off-axis rf magnetron sputtering and electron beam evaporation techniques. The effects of substrate material, temperature, film thickness, deposition rate, sputtering gas, and pressure on the quality of the MgO films produced have been studied. Films deposited on (100) SrTiO3 at temperatures > 300°C display only the (h00) reflections in their X-ray diffraction traces, with narrow X-ray rocking curve measurements indicating that these films are epitaxial. Epitaxy has been confirmed with grazing incidence diffraction. MgO films deposited on (100) LaAlO3 are crystalline, but have varying orientations depending on the film thickness. From scanning electron microscopy, MgO films on SrTiO3 substrates appear smooth and dense while those deposited on LaAlO3 substrates possess rougher surfaces. Surface morphologies have been analyzed using atomic force microscopy.

Comparative Studies of CdZnS Thin Films at Low Zinc Content Prepared by Vacuum Evaporation and CBD

2011 ◽  
Vol 225-226 ◽  
pp. 784-788 ◽  
Author(s):  
Cai Juan Tian ◽  
Rong Zhe Tang ◽  
Song Bai Hu ◽  
Wei Li ◽  
Liang Huan Feng ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Zinc Content ◽  
Window Layer ◽  
X Ray ◽  
Force Microscopy ◽  
Wet Process ◽  
Atomic Force ◽  
Zn Content ◽  
Surface Morphologies

Cd1−xZnxS thin films at low Zn content were prepared both by chemical bath deposition (CBD) and vacuum co-evaporation. The X-ray fluorescence (XRF) and X-ray photoelectron spectroscopy (XPS) analysis were performed to determine the composition of the films, while the structural properties were investigated by X-ray diffraction (XRD). As a probable window layer, the optical band gaps of Cd1−xZnxS thin films prepared by the dry and wet process were calculated. Finally, the surface morphologies of the thin films were survey by scanning electron microscopy (SEM) and atomic force microscopy (AFM).

Structural characterization of Zn–In–Se thin films

2017 ◽  
Vol 31 (05) ◽  
pp. 1750043 ◽  
Author(s):  
H. H. Güllü ◽  
M. Parlak
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Compositional Analysis ◽  
Surface Characteristics ◽  
Thermal Evaporation Method ◽  
Near Surface ◽  
X Ray ◽  
Force Microscopy ◽  
Thin Film Surface

In this study, structural properties of the Zn–In–Se (ZIS) thin films deposited by thermal evaporation method were investigated. The as-grown and annealed ZIS films were found in polycrystalline structure with the main orientation in (112) direction. The compositional analysis of the films showed that they were in Zn-rich behavior and there was a slight change in the elemental contribution to the structure with annealing process. Raman analysis was carried out to determine the crystalline structure and the different vibration modes of ZIS thin films. According to these measurements, the highest Raman intensity was in the LO mode which was directly proportional to the crystallinity of the samples. The atomic force microscopy (AFM) analyses were done in order to obtain detailed information about the morphology of the thin film surface. The surface of the films was observed as nearly-smooth and uniform in as-grown and annealed forms. X-ray photoelectron spectroscopy (XPS) measurements were analyzed to get detailed information about surface and near-surface characteristics of the films. The results from the surface and depth compositional analyses of the films showed quite good agreement with the energy dispersive X-ray spectroscopy (EDS) analysis.

The piezoresistive properties research of SiC thin films prepared by RF magnetron sputtering

2019 ◽  
Vol 33 (15) ◽  
pp. 1950152 ◽  
Author(s):  
Jing Wu ◽  
Xiaofeng Zhao ◽  
Chunpeng Ai ◽  
Zhipeng Yu ◽  
Dianzhong Wen
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Cantilever Beam ◽  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Rf Magnetron Sputtering ◽  
Micro Electro Mechanical System ◽  
Gauge Factor ◽  
X Ray ◽  
Sputtering Power

To research the piezoresistive properties of SiC thin films, a testing structure consisting of a cantilever beam, SiC thin films piezoresistors and a Cr/Pt electrode is proposed in this paper. The chips of testing structure were fabricated by micro-electro-mechanical system (MEMS) technology on a silicon wafer with [Formula: see text]100[Formula: see text] orientation, in which SiC thin films were deposited by using radio-frequency (13.56 MHz) magnetron sputtering method. The effect of sputtering power, annealing temperature and time on the microstructure and morphology of the SiC thin films were investigated by the X-ray diffraction (XRD) and scanning electron microscopy (SEM). It indicates that a good continuity and uniform particles on the SiC thin film surface can be achieved at sputtering power of 160 W after annealing. To verify the existence of Si–C bonds in the thin films, X-ray photoelectron spectroscopy (XPS) was used. Meanwhile, the piezoresistive properties of SiC thin films piezoresistors were measured using the proposed cantilever beam. The test result shows that it is possible to achieve a gauge factor of 35.1.

Growth and Characterizations of Indium-Doped Pentacene Thinfilm Prepared by Thermal Co-Evaporation as a Novel Nanomaterial

2015 ◽  
Vol 1131 ◽  
pp. 35-38
Author(s):  
Navaphun Kayunkid ◽  
Annop Chanhom ◽  
Chaloempol Saributr ◽  
Adirek Rangkasikorn ◽  
Jiti Nukeaw
Keyword(s):  
Thin Films ◽  
Carrier Concentration ◽  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Charge Carrier Mobility ◽  
Electrical Measurements ◽  
X Ray ◽  
Force Microscopy ◽  
Vis Spectroscopy ◽  
Hybrid Thin Films

This research is related to growth and characterizations of indium-doped pentacene thin films as a novel hybrid material. Doped films were prepared by thermal co-evaporation under high vacuum. The doping concentration was varied from 0% to 50% by controlling the different deposition rate between these two materials while the total thickness was fixed at 100 nm. The hybrid thin films were characterized by atomic force microscopy (AFM), X-ray diffraction (XRD) and UV-Visible spectroscopy to reveal the physical and optical properties. Moreover, the electrical properties of ITO/indium-doped-pentacene/Al devices i.e. charge mobility and carrier concentration were determined by considering the relationship between current-voltage and capacitance-voltage. AFM results identify that doping of indium into pentacene has an effect on surface properties of doped films i.e. the increase of surface grain size. XRD results indicate that doping of metal into pentacene has an effect on preferential orientation of pentacene’s crystalline domains. UV-Vis spectroscopy results show evolution of absorbance at photon energy higher than 2.7 eV corresponding to absorption from oxide of indium formed in the films. Electrical measurements exhibit higher conductivity in doped films resulting from increment of both charge carrier mobility and carrier concentration. Furthermore, chemical interactions taken place inside the doped films were investigated by x-ray photoelectron spectroscopy (XPS) in order to complete the remaining questions i.e. how do indium atoms interact with the neighbor molecules?, what is the origin of the absorption at E > 2.7 eV? Further results and discussions will be presented in the publication.

Dielectric Properties of Sol-Gel Derived MgAl2O4 Thin Films

2012 ◽  
Vol 151 ◽  
pp. 314-318
Author(s):  
Ching Fang Tseng ◽  
Cheng Hsing Hsu ◽  
Chun Hung Lai
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Dissipation Factor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Preheating Temperature ◽  
Surface Morphologies

This paper describes microstructure characteristics of MgAl2O4 thin films were deposited by sol-gel method with various preheating temperatures and annealing temperatures. Particular attention will be paid to the effects of a thermal treatment in air ambient on the physical properties. The annealed films were characterized using X-ray diffraction. The surface morphologies of treatment film were examined by scanning electron microscopy and atomic force microscopy. At a preheating temperature of 300oC and an annealing temperature of 700oC, the MgAl2O4 films with 9 μm thickness possess a dielectric constant of 9 at 1 kHz and a dissipation factor of 0.18 at 1 kHz.

Synthesis and Characterization of Nb-Doped TiO2 Thin Films Prepared by RF Magnetron Sputtering

2015 ◽  
Vol 1117 ◽  
pp. 139-142 ◽  
Author(s):  
Marius Dobromir ◽  
Radu Paul Apetrei ◽  
A.V. Rogachev ◽  
Dmitry L. Kovalenko ◽  
Dumitru Luca
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Rf Magnetron Sputtering ◽  
X Ray ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Diffraction Patterns

Amorphous Nb-doped TiO2 thin films were deposited on (100) Si and glass substrates at room temperature by RF magnetron sputtering and a mosaic-type Nb2O5-TiO2 sputtering target. To adjust the amount of the niobium dopant in the film samples, appropriate numbers of Nb2O5 pellets were placed on the circular area of the magnetron target with intensive sputtering. By adjusting the discharge conditions and the number of niobium oxide pellets, films with dopant content varying between 0 and 16.2 at.% were prepared, as demonstrated by X-ray photoelectron spectroscopy data. The X-ray diffraction patterns of the as-deposited samples showed the lack of crystalline ordering in the samples. Surfaces roughness and energy band gap values increase with dopant concentration, as showed by atomic force microscopy and UV-Vis spectroscopy measurements.

Chemistry, microstructure, and electrical properties at interfaces between thin films of cobalt and alpha (6H) silicon carbide (0001)

1995 ◽  
Vol 10 (1) ◽  
pp. 26-33 ◽  
Author(s):  
L.M. Porter ◽  
R.F. Davis ◽  
J.S. Bow ◽  
M.J. Kim ◽  
R.W. Carpenter
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Electron Beam ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Electron Beam Evaporation ◽  
Leakage Currents ◽  
X Ray ◽  
Transmission Electron

Thin films (4–1000 Å) of Co were deposited onto n-type 6H-SiC(0001) wafers by UHV electron beam evaporation. The chemistry, microstructure, and electrical properties were determined using x-ray photoelectron spectroscopy, high resolution transmission electron microscopy, and I-V and C-V measurements, respectively. The as-deposited contacts exhibited excellent rectifying behavior with low ideality factors and leakage currents of n < 1.06 and 2.0 × 10−8 A/cm2 at −10 V, respectively. During annealing at 1000 °C for 2 min, significant reaction occurred resulting in the formation of CoSi and graphite. These annealed contacts exhibited ohmic-like character, which is believed to be due to defects created in the interface region.

scholarly journals Annealing-Driven Microstructural Evolution and Its Effects on the Surface and Nanomechanical Properties of Cu-Doped NiO Thin Films

Coatings ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 107 ◽  
Author(s):  
San-Ho Wang ◽  
Sheng-Rui Jian ◽  
Guo-Ju Chen ◽  
Huy-Zu Cheng ◽  
Jenh-Yih Juang
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Annealing Temperature ◽  
Film Surface ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nanomechanical Properties ◽  
Glass Substrates ◽  
Structural Surface ◽  
Diffraction Peaks

The effects of annealing temperature on the structural, surface morphological and nanomechanical properties of Cu-doped (Cu-10 at %) NiO thin films grown on glass substrates by radio-frequency magnetron sputtering are investigated in this study. The X-ray diffraction (XRD) results indicated that the as-deposited Cu-doped NiO (CNO) thin films predominantly consisted of highly defective (200)-oriented grains, as revealed by the broadened diffraction peaks. Progressively increasing the annealing temperature from 300 to 500 °C appeared to drive the films into a more equiaxed polycrystalline structure with enhanced film crystallinity, as manifested by the increased intensities and narrower peak widths of (111), (200) and even (220) diffraction peaks. The changes in the film microstructure appeared to result in significant effects on the surface energy, in particular the wettability of the films as revealed by the X-ray photoelectron spectroscopy and the contact angle of the water droplets on the film surface. The nanoindentation tests further revealed that both the hardness and Young’s modulus of the CNO thin films increased with the annealing temperature, suggesting that the strain state and/or grain boundaries may have played a prominent role in determining the film’s nanomechanical characterizations.

Ni-Doped ZnO Thin Films: Deposition, Characterization and Photocatalytic Applications

2021 ◽  
Vol 21 (3) ◽  
pp. 1560-1569
Author(s):  
K. Moorthy ◽  
S. S. R. Inbanathan ◽  
C. Gopinathan ◽  
N. P. Lalla ◽  
Abdulaziz Ali Alghamdi ◽  
...  
Keyword(s):  
Thin Films ◽  
Uv Light ◽  
Characteristic Root ◽  
Film Surface ◽  
Hexagonal Wurtzite Structure ◽  
Zno Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Doped Zno

Root like structured Ni-doped zinc oxide [Zn(1-x)NixO (x = 0.09)] thin films were deposited on a non-conducting glass substrate by indigenously developed spray pyrolysis system at optimized substrate hotness of 573±5 K. Thus obtained Ni-doped ZnO thin films were characterized by UV-visible spectroscopy, X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), Atomic Force Microscopy (AFM). XRD result revealed that Ni-doped ZnO has a polycrystalline nature with a hexagonal wurtzite structure. For pure ZnO and Ni-doped ZnO thin films, the particle sizes were 60.9 and 53.3 nm while lattice strain values were 1.56×10−3 and 1.14×10−3, respectively. The film surface showed characteristic root-like structure as observed by the SEM. It was observed that the Ni-doped ZnO thin films were grown in high density along with more extent of branching as compared to pure ZnO thin films but retained the root-like morphologies, however, the branches were more-thinner and of shorter lengths. AFM analysis showed that the surface grains of the Ni-doped samples are homogeneous with less RMS roughness values compared with the undoped ZnO samples. The photocatalytic activity of the prepared thin films was evaluated by the degradation of methyl orange (MO) dye under UV light irradiation. Pure ZnO and Ni-doped ZnO thin films took 150 min and 100 min to degrade about 60% MO dye, respectively.

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