Etching-enhanced Ablation and the Formation of a Microstructure in Silicon by Laser Irradiation in an SF6 Atmosphere

2002 ◽  
Vol 17 (5) ◽  
pp. 1002-1013 ◽  
Author(s):  
S. Jesse ◽  
A. J. Pedraza ◽  
J. D. Fowlkes ◽  
J. D. Budai

Sequential pulsed-laser irradiation of silicon in SF6 atmospheres induced the formation of an ensemble of microholes and microcones. Profilometry measurements and direct imaging with an intensifying charge-coupled device camera were used to study the evolution of this microstructure and the laser-generated plume. Both the partial pressure of SF6 and the total pressure of an SF6-inert gas mixture strongly influenced the maximum height that the microcones attained over the initial surface. The cones first grew continuously with the number of pulses, reached a maximum, and then began to recede as the number of laser pulses increased further. The growth of the cones was closely connected with the evolution of the laser-generated plume.

1986 ◽  
Vol 75 ◽  
Author(s):  
S. Roorda ◽  
A. Polman ◽  
S. B. Ogale ◽  
F. W. Saris

AbstractNitridation and oxidation of titanium is achieved by pulsed laser irradiation of Ti immersed in liquid ammonia or water. Rutherford Backscattering Spectrometry shows that large amounts of nitrogen and oxygen can be incorporated in the metal surface to a depth of several 1000 Å. X-ray diffraction shows evidence of compound formation. Scanning Electron Microscopy reveals that initial surface texture is smoothed, and that stress induced cracks and holes may appear. Irradiation of Fe and Si immersed in various liquids shows that modification depends on which combination of solid and liquid is used. Influence of processing parameters such as laser-energy density and number of laser pulses on compound formation has been investigated. The process is viewed as a reactive solute incorporation in the laser melted surface layer, followed by compound formation.


1984 ◽  
Vol 35 ◽  
Author(s):  
J.Z. Tischler ◽  
B.C. Larson ◽  
D.M. Mills

ABSTRACTSynchrotron x-ray pulses from the Cornell High Energy Synchrotron Source (CHESS) have been used to carry out nanosecond resolution measurements of the temperature distrubutions in Ge during UV pulsed-laser irradiation. KrF (249 nm) laser pulses of 25 ns FWHM with an energy density of 0.6 J/cm2 were used. The temperatures were determined from x-ray Bragg profile measurements of thermal expansion induced strain on <111> oriented Ge. The data indicate the presence of a liquid-solid interface near the melting point, and large (1500-4500°C/pm) temperature gradients in the solid; these Ge results are analagous to previous ones for Si. The measured temperature distributions are compared with those obtained from heat flow calculations, and the overheating and undercooling of the interface relative to the equilibrium melting point are discussed.


1988 ◽  
Vol 100 ◽  
Author(s):  
B. C. Larson ◽  
J. Z. Tischler ◽  
D. M. Mills

ABSTRACTNanosecond-resolution x-ray diffraction has been used to measure the interface and lattice temperatures of silicon during rapid, pulsed-laser induced melting and regrowth in silicon. Measurements have been carried out on <100> and <111> oriented silicon using the (100) and (111) reflections to measure the thermal strain during 30 ns, 1.1 J/cm2 KrF laser pulses. The results indicate overheating to be low (< 2 K/m/s) for both orientations with undercooling rates of 5.6 K/m/s and 11.4 K/m/s for the <100> and <111> orientations, respectively. Observations of higher than expected temperature gradients below the liquidsolid interface have been discussed in terms of restricted heat flow under high gradients.


1993 ◽  
Vol 3 (12) ◽  
pp. 2173-2188
Author(s):  
N. G. Chechenin ◽  
A. V. Chernysh ◽  
V. V. Korneev ◽  
E. V. Monakhov ◽  
B. V. Seleznev

1983 ◽  
Vol 44 (C5) ◽  
pp. C5-449-C5-454 ◽  
Author(s):  
P. Baeri ◽  
M. G. Grimaldi ◽  
E. Rimini ◽  
G. Celotti

1983 ◽  
Vol 44 (C5) ◽  
pp. C5-23-C5-36 ◽  
Author(s):  
H. Kurz ◽  
L. A. Lompré ◽  
J. M. Liu

Author(s):  
Nguyen Phi Long ◽  
Hiroyuki Daido ◽  
Yukihiro Matsunaga ◽  
Tomonori Yamada ◽  
Akihiro Nishimura ◽  
...  

Author(s):  
Katia del Carmen Martínez Guzmán ◽  
Sadasivan Shaji ◽  
Tushar Kanti Das Roy ◽  
Bindu Krishnan ◽  
David Avellaneda Avellaneda ◽  
...  

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