Subcritical Crack Growth in Single-crystal Silicon Using Micromachined Specimens

2002 ◽  
Vol 17 (3) ◽  
pp. 683-692 ◽  
Author(s):  
A. M. Fitzgerald ◽  
R. S. Iyer ◽  
R.H. Dauskardt ◽  
T. W. Kenny
Keyword(s):  
Fracture Toughness ◽  
Stress Corrosion ◽  
Crack Growth ◽  
Subcritical Crack Growth ◽  
Single Crystal Silicon ◽  
High Ratio ◽  
Growth Exponent ◽  
Humid Air ◽  
Crystal Silicon ◽  
High Crack

A micromachined specimen with a test section only 150-μm thick was developed for investigating subcritical crack growth in silicon. Crack growth rates in the range 10−4–10−10 m/s were measured as a function of applied stress intensity (v–K curves) during tests in humid air and dry nitrogen lasting up to 24 h. The fracture toughness, KIc of {110} silicon was also measured at 1.15 ± 0.08 MPa m1/2. While some evidence MPa-m1/2 of subcritical crack growth appeared to occur in the region 0.9 KIc < K > 0.98 KIc, the extremely high crack growth exponent (n 100) and the high ratio of the apparent stress corrosion threshold, KIscc, to the fracture toughness, KIscc/KIc > 0.9, suggests that no clear evidence exists for a stress corrosion process in silicon exposed to humid air.

Fracture Toughness and Subcritical Crack Growth in CVD Diamond

1995 ◽  
Vol 383 ◽  
Author(s):  
A. Kant ◽  
M. D. Drory ◽  
R. O. Ritchie
Keyword(s):  
Fracture Toughness ◽  
Stress Corrosion ◽  
Crack Growth ◽  
Subcritical Crack Growth ◽  
Chemical Vapor ◽  
Cyclic Fatigue ◽  
Cvd Diamond ◽  
Compact Tension ◽  
Fatigue Properties ◽  
Free Standing

ABSTRACTThe fracture toughness, stress corrosion and cyclic fatigue properties of polycrystalline chemical vapor deposited (CVD) diamond have been investigated on thick (˜100 to 300 μm) free-standing films. Specifically, the fracture toughness, Kc, of diamond was determined using indentation methods and for the first time by the tensile testing of pre-notched fracture-mechanics type compact-tension samples. Measured Kc values were found to be between 5 and 7 MPa-m1/2 by either method and to be apparently independent of grain size and shape. Studies on subcritical crack growth (i.e., at stress intensities less than Kc) indicated that CVD diamond is essentially immune to stress-corrosion cracking under sustained loads in room air, water and acid environments. Corresponding experiments to examine susceptibility to cyclic fatigue are currently being performed using indentation-precracked cantilever beams cycled in three-point bending.

scholarly journals Cyclical fatigue of annealed and of thermally tempered soda-lime-silica glass

2018 ◽  
Vol 165 ◽  
pp. 18003
Author(s):  
Jens Schneider ◽  
Jonas Hilcken
Keyword(s):  
Crack Growth ◽  
Silica Glass ◽  
Subcritical Crack Growth ◽  
Soda Lime ◽  
Cyclic Fatigue ◽  
Growth Exponent ◽  
Static Fatigue ◽  
Strength Increase ◽  
Soda Lime Silica Glass ◽  
Number Of Cycles

We present experimental and theoretical investigations on the cyclic fatigue of annealed and of thermally tempered soda-lime-silica glass. Static fatigue due to subcritical crack growth at micro cracks significantly decreases the macroscopic strength of soda-lime-silica glass and causes a time-dependent strength reduction. A subsequent thermal tempering process is typically used to induce residual surface compression stresses, which inhibit the crack growth of surface cracks, and corresponding bulk tension stresses. From the experimental results we show that the existing models for static fatigue used in linear elastic fracture mechanics can be used for the lifetime prediction of cyclically loaded annealed glass and thermally tempered glass, although the (static) crack growth exponent slightly decreases in cyclic loading. The equivalent duration of tensile stress at the crack tip of a micro crack governs the crack growths and not the number of cycles. The threshold for subcritical crack growth determined from the cyclic experiments was found to be in good agreement with data from literature. But unlike in strength tests with singular and quasi-static re-loading, it could be found that periodic loading with load free intervals does not lead to a strength increase by crack healing effects. Based on the results, an engineering design concept for cyclically loaded glass is presented.

Fracture Toughness of Single-Crystal Silicon Carbide

1977 ◽  
Vol 60 (7-8) ◽  
pp. 373-375 ◽  
Author(s):  
J. L. HENSHALL ◽  
D. J. ROWCLIFFE ◽  
J. W. EDINGTON
Keyword(s):  
Fracture Toughness ◽  
Silicon Carbide ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon

Fracture Toughness Measurement of a Micro-Sized Single Crystal Silicon

2005 ◽  
Vol 297-300 ◽  
pp. 292-298 ◽  
Author(s):  
Satoru Koyama ◽  
Kazuki Takashima ◽  
Yakichi Higo
Keyword(s):  
Fracture Toughness ◽  
Single Crystal ◽  
Ion Beam ◽  
Testing Machine ◽  
Single Crystal Silicon ◽  
Mems Devices ◽  
Type Specimens ◽  
Crystal Silicon ◽  
Fracture Toughness Measurement ◽  
Toughness Measurement

Reliability is one of the most critical issues for designing practical MEMS devices. In particular, the fracture toughness of micro-sized MEMS elements is important, as micro/nano-sized flaws can act as a crack initiation sites to cause failure of such devices. Existing MEMS devices commonly use single crystal silicon. Fracture toughness testing upon micro-sized single crystal silicon was therefore carried out to examine whether a fracture toughness measurement technique, based upon the ASTM standard, is applicable to 1/1000th sized silicon specimens. Notched cantilever beam type specimens were prepared by focused ion beam machining. Two specimens types with different notch orientations were prepared. The notch plane/direction were (100)/[010], and (110)/[ ＿ ,110], respectively. Fracture toughness tests were carried out using a mechanical testing machine for micro-sized specimens. Fracture has been seen to occur in a brittle manner in both orientations. The provisional fracture toughness values (KQ) are 1.05MPam1/2 and 0.96MPam1/2, respectively. These values meet the micro-yielding criteria for plane strain fracture toughness values (KIC). Fracture toughness values for the orientations tested are of the same order as values in the literature. The results obtained in this investigation indicate that the fracture toughness measurement method used is applicable for micro-sized components of single crystal silicon in MEMS devices.

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