Precursor scavenging of the resistive grain-boundary phase in 8 mol% yttria-stabilized zirconia: Effect of trace concentrations of SiO2
2001 ◽
Vol 16
(8)
◽
pp. 2377-2383
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Keyword(s):
The influence that trace concentrations of SiO2have on improving grain-boundary conduction via precursor scavenging using additional heat treatment at 1200 °C for 40 h before sintering was investigated. At a SiO2-impurity level (SIL) ≤160 ppm by weight, the grain-boundary resistivity (ρgb) decreased to 20% of its value, while no improvement in grain-boundary conduction was found at a SIL ≥ 310 ppm. The correlation between the resistance per unit grain-boundary area, rgb, and average grain size indicated that the inhomogeneous distribution of the siliceous phase in the sample with a SIL ≥ 310 ppm hampered the scavenging reaction.
1988 ◽
Vol 46
◽
pp. 572-573
Keyword(s):
Keyword(s):
2019 ◽
Vol 103
(3)
◽
pp. 2001-2011
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2004 ◽
Vol 10
(S02)
◽
pp. 304-305
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