Photoluminescence Spectra of Zn1-xCdxAl2Se4 Single Crystals

2000 ◽  
Vol 15 (4) ◽  
pp. 880-883 ◽  
Author(s):  
Seung-Cheol Hyun ◽  
Chang-Dae Kim ◽  
Tae-Young Park ◽  
Hyung-Gon Kim ◽  
Moon-Seog Jin ◽  
...  
Keyword(s):  
Single Crystals ◽  
Lattice Constant ◽  
Energy Band ◽  
Emission Band ◽  
Chalcopyrite Structure ◽  
Photoluminescence Spectra ◽  
Blue Emission Band ◽  
Optical Energy ◽  
Energy Gaps ◽  
Optical Energy Gaps

We investigated the photoluminescence spectra as well as the crystal structure and optical energy gaps of the Zn1-xCdxAl2Se4 single crystals grown by the chemical transport reaction method. It was shown from the analysis of the observed x-ray diffraction patterns that these crystals have a defect chalcopyrite structure for a whole composition. The lattice constant a increases from 5.5561 A for x = 0.0 (ZnAl2Se4) to 5.6361 A for x = 1.0 (CdAl2Se4) with increasing x, whereas the lattice constant c decreases from 10.8890 A for x = 0.0 to 10.7194 A for x = 1.0. The optical energy gaps at 13 K were found to range from 3.082 eV (x = 1.0) to 3.525 eV (x = 0.0). The temperature dependence of the optical energy gaps was well fitted with the Varshni equation. We observed two emission bands consisting of a strong blue emission band and a weak broad emission band due to donor–acceptor pair recombination in the Zn1-xCdxAl2Se4 for 0.0 ⩽ x ⩽ 1.0. These emission bands showed a red shift with increasing x. The energy band scheme for the radiative mechanism of the Zn1-xCdxAl2Se4 was proposed on the basis of the photoluminescence thermal quenching analysis along with the measurements of photo-induced current transient spectroscopy. The proposed energy band model permits us to assign the observed emission bands.

Photoluminescence spectra of Zn1−xCdxAl2Se4-4xS4x single crystals

2000 ◽  
Vol 15 (12) ◽  
pp. 2690-2694 ◽  
Author(s):  
Sung-Hyu Choe ◽  
Chang-Sun Yoon ◽  
Moon-Seog Jin ◽  
Seung-Cheol Hyun ◽  
Chang Dae Kim ◽  
...  
Keyword(s):  
Single Crystals ◽  
Emission Band ◽  
Energy Gap ◽  
Visible Region ◽  
Chalcopyrite Structure ◽  
Broad Emission Band ◽  
Photoluminescence Spectra ◽  
Chemical Transport Reaction ◽  
Transport Reaction ◽  
Optical Energy

We investigated the photoluminescence as well as the crystal structure and optical energy gaps of the Zn1-xCdxAl2Se4-4xS4x solid solution system based on the Al-related compounds of ZnAl2Se4, ZnAl2S4, CdAl2Se4, and CdAl2S4. The single crystals of the system with 0.0 ≤ x ≤ 1.0 were grown by the chemical transport reaction technique. The Zn1-xCdxAl2Se4-4xS4x crystallizes in a defect chalcopyrite structure for a whole composition and has an optical energy gap ranging from 3.525 to 3.577 eV at 13 K. The photoluminescence spectra at 13 K showed a strong emission band in the blue spectral region and a weak broad emission band in the visible region due to donor–acceptor pair recombination. The composition and temperature dependence of these bands were examined in the investigated regions. The simple energy band scheme for the radiative mechanisms of the Zn1-xCdxAl2Se4-4xS4x is proposed on the basis of our experimental results along with photo-induced current transient spectroscopy measurements.

Composition and temperature dependence of optical energy gaps of TlGa1−xSbxS2 single crystals

2003 ◽  
Vol 18 (3) ◽  
pp. 620-623
Author(s):  
Moon-Seog Jin ◽  
Jae-Yeol Kim ◽  
Koung-Suk Kim ◽  
Sung-Hyu Choe ◽  
Ho-Jun Song
Keyword(s):  
Temperature Dependence ◽  
Single Crystals ◽  
Optical Energy ◽  
Energy Gaps ◽  
Direct Energy ◽  
Stockbarger Method ◽  
Optical Energy Gaps

TlGa1−xSbxS2 (x = 0.0, 0.2, 0.4, 0.6, 0.8, 1.0) single crystals were grown using the Bridgman–Stockbarger method. The direct energy gaps of the single crystals were found to be 2.586, 2.459, 2.344, 2.228, 2.119, and 1.987 eV for the composition x = 0.0, 0.2, 0.4, 0.6, 0.8, and 1.0, respectively, at 20 K. The indirect energy gaps were found to be 2.479, 2.357, 2.232, 2.118, 1.983, and 1.871 eV for the composition x = 0.0, 0.2, 0.4, 0.6, 0.8, and 1.0, respectively, at 20 K. The optical energy gaps decreased linearly with increasing composition x. The temperature dependence of the optical energy gaps for each of the single crystals was well fitted with the Varshni equation.

Thermal and Optical Energy Gaps in Pb0.93Sn0.07Te and Pb0.85Sn0.15Te

1967 ◽  
Vol 38 (9) ◽  
pp. 3714-3720 ◽  
Author(s):  
R. N. Tauber ◽  
I. B. Cadoff
Keyword(s):  
Optical Energy ◽  
Energy Gaps ◽  
Optical Energy Gaps

Properties of CuInS2 Thin Films Fabricated by SEL Method

Solar Energy ◽  
2005 ◽  
Author(s):  
Gye-Choon Park ◽  
Woon-Jo Jeong ◽  
Hyeon-Hun Yang ◽  
Hae-Duck Jung ◽  
Jin Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Lattice Constant ◽  
Energy Band ◽  
Optical Energy ◽  
Glass Substrates ◽  
Cuins2 Thin Films ◽  
Sulfur Atmosphere ◽  
P Type

CuInS2 thin films were fabricated by sulphurization of S/In/Cu Stacked elemental layers (SEL) on slide glass substrates by annealing in vacuum of 10−3 Torr at temperature of 50 °C ∼ 350 °C. Some S/In/Cu SEL were vacuum annealed under a sulfur atmosphere. The thin films thus annealed were analyzed by measuring structural, electrical and optical properties. When CuInS2 thin films were made under a sulfur atmosphere, lattice constant of a and grain size of the thin film were a little larger than those in only vacuum annealing. The largest lattice constant of a and grain size was 5.63 Å and 1.2 μm respectively. Also, when the thin films were made under a sulfur atmosphere, conduction types were all p-type with resistivities of around 10−1 Ωcm and optical energy band gaps of the films were a little larger than those in only vacuum and the largest optical energy band gap of CuInS2 thin film was 1.53 eV.

Optical energy gaps of β‐In2S3thin films grown by spray pyrolysis

1986 ◽  
Vol 60 (7) ◽  
pp. 2631-2633 ◽  
Author(s):  
Wha‐Tek Kim ◽  
Chang‐Dae Kim
Keyword(s):  
Spray Pyrolysis ◽  
Optical Energy ◽  
Energy Gaps ◽  
Optical Energy Gaps
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