Optimization of Ta–Si–N thin films for use as oxidation-resistant diffusion barriers

2000 ◽  
Vol 15 (1) ◽  
pp. 194-198 ◽  
Author(s):  
C. Cabral ◽  
K. L. Saenger ◽  
D. E. Kotecki ◽  
J. M. E. Harper
Keyword(s):  
Oxygen Diffusion ◽  
Random Access ◽  
Argon Plasma ◽  
Diffusion Barriers ◽  
X Ray Diffraction ◽  
Electrically Conductive ◽  
Low Dielectric ◽  
Oxidation Resistant ◽  
Sputter Deposited ◽  
C 30

We have demonstrated that the optimum Ta–Si–N compositions for use as oxygen diffusion barriers in stacked-capacitor dynamic random-access memory structures with perovskite dielectrics are in the range Ta(20–25 at.%)–Si(20–45 at.%)–N(35–60 at.%). Twenty-two different Ta–Si–N compositions were evaluated, starting from six sputter-deposited Ta–Si alloys of which four were reactively deposited in 2–8% nitrogen in an argon plasma. The barriers were evaluated after an aggressive 650 °C/30 min oxygen anneal to determine if they remained electrically conductive, prevented oxygen diffusion and formation of low dielectric constant oxides, and had minimal interaction with the Pt electrode and underlying Si plug. Rutherford backscattering spectroscopy, four-point probe sheet resistance, through-film-resistance, and x-ray diffraction analysis techniques were used in the evaluation.

Sputter Deposited, Electrically Conductive, Oxidation Resistant Coatings

1985 ◽  
Vol 54 ◽  
Author(s):  
Sharon K. Rutledge
Keyword(s):  
Indium Tin Oxide ◽  
Electromagnetic Interference ◽  
Atomic Oxygen ◽  
Ion Beam ◽  
Space Plasma ◽  
Polymer Materials ◽  
Electrically Conductive ◽  
Solar Arrays ◽  
Oxidation Resistant ◽  
Sputter Deposited

ABSTRACTSignificant polymer weight loss has been observed due to environmental ashing by atomic oxygen at low earth orbital (LEO) altitudes. Static charging during deployment and charging caused by the space plasma in LEO polar orbits may cause electromagnetic interference (EMI) problems on insulating polymer materials that are integral to such applications as high voltage solar arrays. Simultaneous ion beam sputter deposited coatings of indium-tin-oxide (ITO) with polytetrafluoroethylene (PTFE), carbon, air, or methane were investigated as potential solutions to these problems. The purpose of this research was to improve the flexibility of ITO coatings with these additives and to study the effect the addition of these materials had not only on the flexibility of ITO sputter deposited thin films but also on the conductivity and optical properties.

Layered TaSiN as an Oxidation Resistant Electrically Conductive Barrier

1999 ◽  
Vol 14 (4) ◽  
pp. 1604-1609 ◽  
Author(s):  
A. Grill ◽  
C. Jahnes ◽  
C. Cabral
Keyword(s):  
No Oxidation ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Electrically Conductive ◽  
Annealing Conditions ◽  
Lanthanum Titanate ◽  
Resistance To Oxidation ◽  
Oxidation Resistant ◽  
Barrier Metal ◽  
Si Content

TaSiN films deposited as layered TaN–SiN structures of various compositions have been examined for their oxidation resistant properties during annealing in oxygen at annealing conditions commonly used to prepare perovskite dielectrics. The films have been characterized by Rutherford backscattering analysis (RBS), x-ray diffraction (XRD), and electrical resistivity measurements. Films with less than 15 at.% Si showed some resistance to oxidation after annealing for 1 min at 650 °C but became fully oxidized after longer anneals. Increasing the Si content up to 28 at.% increasingly improved the oxidation resistance of the alloys to the point where the films resisted complete oxidation for up to 5 min at 700 °C. For alloys with greater than 28 at.% Si, no oxidation could be detected by RBS or electrical measurements for anneals up to 5 min at 700 °C. Furthermore, these high Si content alloys were still conductive with resistivities of near 1000 μΩ cm. It was also found that TaSiN and lead lanthanum titanate (PLT) interact strongly during annealing, and another nonoxidizing barrier metal, such as Pt, is required between the two materials if TaSiN is to be used as an electrode/barrier with lead-based perovskites.

Al–Ta Bilayer as an Oxidation Resistant Barrier for Electrode Structures in High Dielectric Constant Capacitors

1999 ◽  
Vol 14 (4) ◽  
pp. 1581-1588 ◽  
Author(s):  
A. Grill ◽  
C. Cabral
Keyword(s):  
Electron Spectroscopy ◽  
Oxygen Diffusion ◽  
High Dielectric Constant ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
X Ray ◽  
Si Substrates ◽  
Lanthanum Titanate ◽  
Oxidation Resistant ◽  
High Dielectric

Aluminum-tantalum bilayers have been investigated for their potential to serve as conductive barriers to oxygen diffusion when annealed at conditions corresponding to crystallization of perovskite dielectrics such as lead lanthanum titanate (PLT). Ta (50 nm)/Al (15 nm) structures have been deposited on Si substrates and annealed in oxygen at 650 and 700 °C for various amounts of time. The as-deposited and annealed structures have been characterized by x-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), and Auger electron spectroscopy (AES) analysis and by four-point probe electrical measurements. It has been found that the Al–Ta structures can withstand complete oxidation when exposed to oxygen at 650 °C for 30 min or 700 °C for 1 min and the oxide layer formed at the surface of the structure acts as a barrier to further oxygen diffusion. When a PLT film was deposited directly on the Al–Ta structures intermixing took place. It was therefore necessary to insert a Pt layer between the Al–Ta barrier and PLT layer. In such a case the PLT showed electrical properties similar to those obtained when deposited on SiO2/Pt; however, the Al–Ta structure did interact with Pt during the perovskite formation anneal. It has been found that this interaction can be prevented by preannealing the Al–Ta, in oxygen, prior to the deposition of Pt.

TEM studies of solid-state reactions in sputter-deposited Nb/Al multilayer thin films

1996 ◽  
Vol 54 ◽  
pp. 1020-1021
Author(s):  
F. Ma ◽  
S. Vivekanand ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Stoichiometric Composition ◽  
Analytical Electron Microscopy ◽  
Grain Structure ◽  
Solid State Reactions ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputter Deposited

Solid state reactions in sputter-deposited Nb/Al multilayer thin films have been studied by transmission and analytical electron microscopy (TEM/AEM), differential scanning calorimetry (DSC) and X-ray diffraction (XRD). The Nb/Al multilayer thin films for TEM studies were sputter-deposited on (1102)sapphire substrates. The periodicity of the films is in the range 10-500 nm. The overall composition of the films are 1/3, 2/1, and 3/1 Nb/Al, corresponding to the stoichiometric composition of the three intermetallic phases in this system.Figure 1 is a TEM micrograph of an as-deposited film with periodicity A = dA1 + dNb = 72 nm, where d's are layer thicknesses. The polycrystalline nature of the Al and Nb layers with their columnar grain structure is evident in the figure. Both Nb and Al layers exhibit crystallographic texture, with the electron diffraction pattern for this film showing stronger diffraction spots in the direction normal to the multilayer. The X-ray diffraction patterns of all films are dominated by the Al(l 11) and Nb(l 10) peaks and show a merging of these two peaks with decreasing periodicity.

The reaction of amorphous Ni-Nb films with Si in the presence of a native SiO2 layer

1990 ◽  
Vol 48 (4) ◽  
pp. 664-665
Author(s):  
N. Rozhanski ◽  
A. Barg
Keyword(s):  
High Temperature ◽  
Crystallization Temperature ◽  
Diffusion Barriers ◽  
Sio2 Layer ◽  
Si Substrate ◽  
Cross Sectional ◽  
Plan View ◽  
Temperature Range ◽  
Sputter Deposited

Amorphous Ni-Nb alloys are of potential interest as diffusion barriers for high temperature metallization for VLSI. In the present work amorphous Ni-Nb films were sputter deposited on Si(100) and their interaction with a substrate was studied in the temperature range (200-700)°C. The crystallization of films was observed on the plan-view specimens heated in-situ in Philips-400ST microscope. Cross-sectional objects were prepared to study the structure of interfaces.The crystallization temperature of Ni5 0 Ni5 0 and Ni8 0 Nb2 0 films was found to be equal to 675°C and 525°C correspondingly. The crystallization of Ni5 0 Ni5 0 films is followed by the formation of Ni6Nb7 and Ni3Nb nucleus. Ni8 0Nb2 0 films crystallise with the formation of Ni and Ni3Nb crystals. No interaction of both films with Si substrate was observed on plan-view specimens up to 700°C, that is due to the barrier action of the native SiO2 layer.

The Effect of the Microstructure of Diffusion Barriers on the Palladium Activation for Electroless Copper Deposition

2002 ◽  
Vol 716 ◽  
Author(s):  
Seok Woo Hong ◽  
Yong Sun Lee ◽  
Ki-Chul Park ◽  
Jong-Wan Park
Keyword(s):  
Electron Microscopy ◽  
Diffusion Barriers ◽  
Copper Deposition ◽  
X Ray Diffraction ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Electroless Copper ◽  
Sheet Resistance Measurement ◽  
Scanning Electron

AbstractThe effect of microstructure of dc magnetron sputtered TiN and TaN diffusion barriers on the palladium activation for autocatalytic electroless copper deposition has been investigated by using X-ray diffraction, sheet resistance measurement, field emission scanning electron microscopy (FE-SEM) and plan view transmission electron microscopy (TEM). The density of palladium nuclei on TaN diffusion barrier increases as the grain size of TaN films decreases, which was caused by increasing nitrogen content in TaN films. Plan view TEM results of TiN and TaN diffusiton barriers showed that palladium nuclei formed mainly on the grain boundaries of the diffusion barriers.

Properties of Sputter Deposited ZnO Films Co-doped with Lithium and Phosphorus

2013 ◽  
Vol 1494 ◽  
pp. 77-82
Author(s):  
T. N. Oder ◽  
A. Smith ◽  
M. Freeman ◽  
M. McMaster ◽  
B. Cai ◽  
...  
Keyword(s):  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Hall Effect Measurements ◽  
Sputter Deposited ◽  
P Type ◽  
Post Deposition ◽  
Co Doped

ABSTRACTThin films of ZnO co-doped with lithium and phosphorus were deposited on sapphire substrates by RF magnetron sputtering. The films were sequentially deposited from ultra pure ZnO and Li3PO4 solid targets. Post deposition annealing was carried using a rapid thermal processor in O2 and N2 at temperatures ranging from 500 °C to 1000 °C for 3 min. Analyses performed using low temperature photoluminescence spectroscopy measurements reveal luminescence peaks at 3.359, 3.306, 3.245 eV for the co-doped samples. The x-ray diffraction 2θ-scans for all the films showed a single peak at about 34.4° with full width at half maximum of about 0.17°. Hall Effect measurements revealed conductivities that change from p-type to n-type over time.

Magnetodielectric Ni ferrite ceramics with Bi2O3 additive for potential antenna miniaturizations

2009 ◽  
Vol 24 (2) ◽  
pp. 324-332 ◽  
Author(s):  
X.T. Liew ◽  
K.C. Chan ◽  
L.B. Kong
Keyword(s):  
Magnetic Properties ◽  
Dielectric Loss ◽  
Grain Growth ◽  
Sintering Temperature ◽  
Magnetic Loss ◽  
Liquid Phase Sintering ◽  
X Ray Diffraction ◽  
Low Dielectric ◽  
High Concentrations

This paper reports on the preparation and characterization of nickel ferrite (NiFe1.98O4) ceramics doped with Bi2O3 as sintering aid. Focus has been on the effects of concentration of Bi2O3 and sintering temperature on the densification, grain growth, dielectric, and magnetic properties of the NiFe1.98O4 ceramics, with an aim at developing magnetodielectric properties, with almost equal real permeability and permittivity, as well as sufficiently low magnetic and dielectric loss tangents, over 3 to 30 MHz (high frequency or HF band). X-ray diffraction results indicated that there is no obvious reaction between NiFe1.98O4 and Bi2O3, at Bi2O3 levels of up to 7 wt% and temperatures up to 1150 °C. The addition of Bi2O3 facilitated a liquid phase sintering mechanism for the densification of NiFe1.98O4 ceramics. The addition of Bi2O3 not only improved the densification but also promoted the grain growth of NiFe1.98O4 ceramics. To achieve sufficiently low dielectric loss tangent, the concentration of Bi2O3 should not be less than 5 wt%. The low dielectric loss tangents of the samples doped with high concentrations of Bi2O3 can be attributed to the full densification of the ceramics. Magnetic properties of the NiFe1.98O4 ceramics, as a function of sintering temperature and Bi2O3 concentration, can be qualitatively explained by the Globus model. Promising magnetodielectric properties have been obtained in the sample doped with 5% Bi2O3 and sintered at 1050 °C for 2 h. The sample has almost equal values of permeability and permittivity of ∼12, together with low dielectric and magnetic loss tangents, over 3 to 30 MHz. This material might be useful for the miniaturization of HF (3 to 30 MHz) antennas.

scholarly journals Влияние толщины пленки Pt на изменение текстуры и доли кристаллической фазы при ее отжиге

2020 ◽  
Vol 90 (5) ◽  
pp. 795
Author(s):  
Р.В. Селюков ◽  
В.В. Наумов
Keyword(s):  
Volume Fraction ◽  
Curve Analysis ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Texture Parameters ◽  
Sputter Deposited ◽  
Pt Films ◽  
H 20

Textured Pt films with thickness h=20-80 nm were sputter deposited on oxidized c-Si (100) wafers and annealed in vacuum at 500°C/60 min. The thickness dependencies of the crystalline texture parameters and of the fraction of crystalline phase δ are obtained for as-deposited and annealed films using X-ray diffraction. The determination of δ in textured films is carried out by the new method based on rocking curve analysis. It is found that annealing leads to the texture improvement and to the increasing of δ for all h. The less h, the stronger effects of texture improvement and of δ increasing. These results are explained by the annealing-induced formation of large secondary grains whose volume fraction increases as h decreases. The inhomogeneity of the depth distributions of texture parameters and of δ are investigated for the as-deposited Pt films.

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