Effect of (La0.5Sr0.5)CoO3 and Pt intermediate layers on improving the stability of Pb1–xLaxTi1–x/4O3 films

1998 ◽  
Vol 13 (5) ◽  
pp. 1286-1290 ◽  
Author(s):  
J. P. Wang ◽  
Y. C. Ling ◽  
Y. K. Tseng ◽  
K. S. Liu ◽  
I. N. Lin
Keyword(s):  
High Temperature ◽  
Perovskite Phase ◽  
Grazing Angle ◽  
Silicon Substrates ◽  
Significant Deterioration ◽  
Si Substrates ◽  
Intermediate Layers ◽  
Platinum Coating ◽  
The Stability ◽  
Si Films

Deposition of a (La0.5Sr0.5)CoO3 (LSCO) layer on top of Pt/Ti/Si substrates was observed to substantially improve the stability of the subsequently deposited Pb1−xLaxTi1−x/4O3 (PLT) films. Platinum coating of silicon substrates by itself is known to enhance the formation of PLT phase. In this paper, the elemental depth profile examined by secondary ion mass spectroscopy (SIMS) and the structural profile examined by grazing angle incident x-ray diffractometry (GIXD) reveals that the Ti species precoated underneath the Pt layer diffuses outward through the Pt layer at high temperature, forming a rutile TiO2 layer on top of Pt coating. It is this outermost TiO2 layer which promotes the transformation kinetics of the PLT species adhered onto substrates into the perovskite phase. Thus obtained films (PLT/Pt/Ti/Si) are, however, not stable enough to survive subsequent high-temperature processing. On the other hand, the PLT/LSCO/Pt/Ti/Si films, which incorporate LSCO as buffer layer, can survive 650 °C without significant deterioration.

Electron Energy Analysis of Germanium and Silica Layers on Silicon Substrates

1975 ◽  
Vol 33 ◽  
pp. 96-97
Author(s):  
R. W. Ditchfield ◽  
A. G. Cullis
Keyword(s):  
Epitaxial Growth ◽  
Electron Energy ◽  
Silicon Substrates ◽  
Secondary Phases ◽  
Si Substrates ◽  
Transmission Electron ◽  
Layer Structures ◽  
Si Films ◽  
Electron Energy Loss ◽  
Growth Centres

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.

Influence of adhesion intermediate layers on the stability of nanodiamond composite films deposited on Si substrates by coaxial arc plasma

2020 ◽  
Author(s):  
Ali M. Ali ◽  
Mohamed Egiza ◽  
Koki Murasawa ◽  
Hiroaki Sugita ◽  
Tanja Deckert-gaudig ◽  
...  
Keyword(s):  
Composite Films ◽  
Arc Plasma ◽  
Si Substrates ◽  
Intermediate Layers ◽  
The Stability

Formation of the secondary phases in the Pb-containing perovskite films by pulsed laser deposition

1994 ◽  
Vol 9 (9) ◽  
pp. 2379-2385 ◽  
Author(s):  
M.H. Yeh ◽  
K.S. Liu ◽  
I.N. Lin
Keyword(s):  
Thin Films ◽  
Perovskite Phase ◽  
Secondary Phases ◽  
Outward Diffusion ◽  
Perovskite Materials ◽  
Platinum Coating ◽  
Tan Δ ◽  
High Dielectric ◽  
Si Films

The growth behavior of Pb2+-containing ferroelectric thin films has been systematically examined. The kinetics of the formation of perovskite phase were successfully enhanced by using a material containing no Zr4+-ions, viz., Pb0.95La0.05Ti0.9875O3 (PLT) films, and by utilizing platinum coating on silicon substrate. Meanwhile, the formation of TiO2 phase (rutile) on PLT/Pt(Si) films has been observed and was ascribed to both the outward diffusion of Ti4+-ions from the Ti-layer underneath the Pt-coating and the loss of Pb2+-ions on the surface of the films. The perovskite materials, which were free of either pyrochlore, Zr-rich phase, or TiO2 phase, can be obtained by in situ depositing the PLT films at 450 °C substrate temperature and 1 mbar oxygen pressure. Thus obtained thin films possessed high dielectric constant, ∊r = 1346 and tan δ = 0.071 at 10 kHz, and large charge storage density, Qc = 5.4 μC/cm2 at 50 kV/cm.

Phase Transition and Formation of TiSi2 Codeposited on Atomically Clean Si(111).

1993 ◽  
Vol 311 ◽  
Author(s):  
Hyeongtag Jeon ◽  
Y. S. Cho ◽  
E. Y. Kang ◽  
J. W. Park ◽  
R.R. Nemanich
Keyword(s):  
Phase Transition ◽  
Phase Transformation ◽  
High Temperature ◽  
Rough Surface ◽  
Smooth Surface ◽  
Elevated Temperatures ◽  
Titanium Silicide ◽  
Surface And Interface ◽  
Si Substrates ◽  
Si Films

ABSTRACTIn this study, the phase transformation and the surface and interface morphologies of TiSi2 formed on atomically clean Si substrates are investigated. 200Å Ti and 400A Si films on Si(111) have been co-deposited at elevated temperatures (400°C - 800°C) in ultrahigh vacuum. The phase transition of TiSi2 is characterized with using XRD. The results distinguish the formation of the C49 and C54 crystalline titanium silicides. The surface and interface morphologies of titanium silicides have been examined with SEM and TEM. A relatively smooth surface is observed for the C49 phase while a rough surface and interface are observed for the C54 phase. The islanding of the C54 phase becomes severe at high temperature (800°C). Islands of TiSi2 have been observed at temperatures above 700°C but no islands are observed at temperatures below 600°C. For films deposited at 400TC and 500°C, weak XRD peaks corresponding to TiSi were observed and TEM micrographs exhibited small crystalline regions of titanium silicide at the interface.

Impact of Template Layers on Dielectric and Electrical Properties of Pulsed-Laser Ablated Pb(Mg1/3 Nb2/3)O3 - PbTiO3 Thin Films

2001 ◽  
Vol 688 ◽  
Author(s):  
Apurba Laha ◽  
S. Saha ◽  
S. B. Krupanidhi
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Perovskite Phase ◽  
Pulsed Laser ◽  
Thin Layers ◽  
Silicon Substrates ◽  
Si Substrates ◽  
Actual Nature ◽  
Different Temperatures ◽  
Pt Films

AbstractA study was done on pulsed laser deposited relaxor ferroelectric thin films of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) deposited on platinized silicon substrates with template layers to observe the influence of the template layers on physical and electrical properties. Initial results, showed that perovskite phase (80% by volume) was obtained through proper selection of the processing conditions on Pt/Ti/SiO2/Si substrates. The films were grown at 300°C and then annealed in a rapid thermal annealing furnace in the temperature range of 750-850°C to induce crystallization. Comparison of the films annealed at different temperatures revealed a change in crystallinity, perovskite phase formation and grain size. These results were further used to improve the quality of the perovskite PMN-PT phase by inserting thin layers of TiO2 on the Pt substrate. These resulted in an increase in perovskite phase in the films even at lower annealing temperatures. Dielectric studies on the PMN-PT films show very high values of dielectric constant (1300) at room temperature, which further improved with the insertion of the template seed layer. The relaxor properties of the PMN-PT were correlated with Vogel-Fulcher theory to determine the actual nature of the relaxation process.

Generation of Void-Like Structures during Hot-Hydrogen Etching of Si Substrates for 3C-SiC Epitaxy

2011 ◽  
Vol 679-680 ◽  
pp. 127-130 ◽  
Author(s):  
Philip Hens ◽  
J. Müller ◽  
L. Fahlbusch ◽  
E. Spiecker ◽  
Peter J. Wellmann
Keyword(s):  
High Temperature ◽  
Surface Structures ◽  
Silicon Substrates ◽  
Type I ◽  
Type Ii ◽  
Hydrogen Etching ◽  
Si Substrates ◽  
Nucleation Sites ◽  
New Type ◽  
Heteroepitaxial Layers

A new type of void-like structure has been identified in thin 3C-SiC heteroepitaxial layers grown on silicon substrates. Similar surface structures can be found in micrographs published in the literature but have not been addressed so far. We propose a mechanism which explains the formation of these “type II voids” as result of hot-hydrogen etching. Type II voids seem to act as nucleation sites for the well-known faceted voids formed beneath the 3C-SiC layer during seeding (type I voids). Suppression of type II voids by appropriate high temperature cleaning steps therefore reduces the overall density of detrimental type I voids.

Effect of Improved ThO2 Particle Dispersion in Nickel on High-Temperature Strength

1970 ◽  
Vol 28 ◽  
pp. 444-445
Author(s):  
E. R. Kimmel ◽  
H. L. Anthony ◽  
W. Scheithauer
Keyword(s):  
High Temperature ◽  
Metal Matrix ◽  
Oxide Particle ◽  
Oxide Phase ◽  
Dislocation Motion ◽  
Particle Dispersion ◽  
High Temperature Strength ◽  
Strengthening Effect ◽  
Oxide Particles ◽  
The Stability

The strengthening effect at high temperature produced by a dispersed oxide phase in a metal matrix is seemingly dependent on at least two major contributors: oxide particle size and spatial distribution, and stability of the worked microstructure. These two are strongly interrelated. The stability of the microstructure is produced by polygonization of the worked structure forming low angle cell boundaries which become anchored by the dispersed oxide particles. The effect of the particles on strength is therefore twofold, in that they stabilize the worked microstructure and also hinder dislocation motion during loading.

TEM characterization of Au/Polysilicon interactions

1990 ◽  
Vol 48 (4) ◽  
pp. 650-651
Author(s):  
N. David Theodore ◽  
Leslie H. Allen ◽  
C. Barry Carter ◽  
James W. Mayer
Keyword(s):  
Solid Phase ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Electrical Contacts ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Polysilicon Films ◽  
The Stability

Metal/polysilicon investigations contribute to an understanding of issues relevant to the stability of electrical contacts in semiconductor devices. These investigations also contribute to an understanding of Si lateral solid-phase epitactic growth. Metals such as Au, Al and Ag form eutectics with Si. reactions in these metal/polysilicon systems lead to the formation of large-grain silicon. Of these systems, the Al/polysilicon system has been most extensively studied. In this study, the behavior upon thermal annealing of Au/polysilicon bilayers is investigated using cross-section transmission electron microscopy (XTEM). The unique feature of this system is that silicon grain-growth occurs at particularly low temperatures ∽300°C).Gold/polysilicon bilayers were fabricated on thermally oxidized single-crystal silicon substrates. Lowpressure chemical vapor deposition (LPCVD) at 620°C was used to obtain 100 to 400 nm polysilicon films. The surface of the polysilicon was cleaned with a buffered hydrofluoric acid solution. Gold was then thermally evaporated onto the samples.

Investigation of the Effect of Uv-Assisted Oxidation and Nitridation of Hafnium Metal Films

2003 ◽  
Vol 780 ◽  
Author(s):  
C. Essary ◽  
V. Craciun ◽  
J. M. Howard ◽  
R. K. Singh
Keyword(s):  
Uv Radiation ◽  
Photoelectron Spectroscopy ◽  
Grazing Angle ◽  
X Ray Diffraction ◽  
Metal Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Silicon Interface

AbstractHf metal thin films were deposited on Si substrates using a pulsed laser deposition technique in vacuum and in ammonia ambients. The films were then oxidized at 400 °C in 300 Torr of O2. Half the samples were oxidized in the presence of ultraviolet (UV) radiation from a Hg lamp array. X-ray photoelectron spectroscopy, atomic force microscopy, and grazing angle X-ray diffraction were used to compare the crystallinity, roughness, and composition of the films. It has been found that UV radiation causes roughening of the films and also promotes crystallization at lower temperatures.Furthermore, increased silicon oxidation at the interface was noted with the UVirradiated samples and was shown to be in the form of a mixed layer using angle-resolved X-ray photoelectron spectroscopy. Incorporation of nitrogen into the film reduces the oxidation of the silicon interface.

Rapid Epitaxial Growth of Si and SiGe Mono-Crystalline Films on Silicon-on-Glass Substrates by Reactive CVD Using SiH4, GeH4, and F2

2012 ◽  
Vol 1426 ◽  
pp. 331-337
Author(s):  
Hiroshi Noge ◽  
Akira Okada ◽  
Ta-Ko Chuang ◽  
J. Greg Couillard ◽  
Michio Kondo
Keyword(s):  
Epitaxial Growth ◽  
Heating Temperature ◽  
Exothermic Reaction ◽  
Epitaxial Films ◽  
Si Substrates ◽  
Glass Substrates ◽  
Good Crystallinity ◽  
Crystalline Films ◽  
Si Films ◽  
First Time

ABSTRACTWe have succeeded in the rapid epitaxial growth of Si, Ge, and SiGe films on Si substrates below 670 ºC by reactive CVD utilizing the spontaneous exothermic reaction between SiH4, GeH4, and F2. Mono-crystalline SiGe epitaxial films with Ge composition ranging from 0.1 to 1.0 have been successfully grown by reactive CVD for the first time.This technique has also been successfully applied to the growth of these films on silicon-on-glass substrates by a 20 - 50 ºC increase of the heating temperature. Over 10 μm thick epitaxial films at 3 nm/s growth rate are obtained. The etch pit density of the 5.2 μm-thick Si0.5Ge0.5 film is as low as 5 x 106 cm-2 on top. Mobilities of the undoped SiGe and Si films are 180 to 550 cm2/Vs, confirming the good crystallinity of the epitaxial films.

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