Radiation-induced defects and amorphization in zircon

1990 ◽  
Vol 5 (11) ◽  
pp. 2687-2697 ◽  
Author(s):  
W. J. Weber

The effects of self-radiation damage as a function of cumulative alpha-decay events in synthetic zircon doped with 238Pu and natural zircons damaged over geologic time are compared and interpreted in terms of the accumulation of both defects and amorphousness. The radiation-induced unit-cell expansion and amorphization result in macroscopic swelling that increases sigmoidally with cumulative decay events and saturates at a fully amorphous state. The derived amorphous fraction as a function of cumulative dose is consistent with models based on the multiple overlap of displacement cascades, indicating that amorphization in zircon occurs as a result of the local accumulation of high defect concentrations rather than directly within a displacement cascade. Annealing of point defects in the natural zircons suppresses initial swelling and delays the onset of amorphization. Full recrystallization of the zircon structure from the amorphous state occurs in two stages, with kinetics and activation energies consistent with the reported thermal stability of the amorphous state. This study further confirms that actinide doping is a viable accelerated technique to study or simulate radiation effects from alpha decay on geologic time scales.

1984 ◽  
Vol 44 ◽  
Author(s):  
W. J. Weber ◽  
J. W. Wald ◽  
Hi. Matzke

AbstractThree crystalline ceramic materials, which occur as host phases for the long-lived actinides in many nuclear waste formulations, were doped with Cm-244, and the effects of self-radiation damage from alpha decay on microstructure and physical properties were investigated. The irradiation-induced microstructure consisted of individual amorphous tracks from both the alpha-recoil particles and the spontaneous fission fragments. The eventual overlap of the tracks at higher doses leads to a completely amorphous state. This radiation-induced amorphization process results in measured increases in volume, leachability, and stored energy. Thermal recovery of the radiation-induced swelling and amorphization occurs with full recrystallization to the initial structures.


2005 ◽  
Vol 483-485 ◽  
pp. 365-368 ◽  
Author(s):  
Giovanni Alfieri ◽  
Edouard V. Monakhov ◽  
Margareta K. Linnarsson ◽  
Bengt Gunnar Svensson

Deep level transient spectroscopy (DLTS) was employed to investigate the annealing behaviour and thermal stability of radiation induced defects in nitrogen doped 4H-SiC epitaxial layers, grown by chemical vapor deposition (CVD). The epilayers have been irradiated with 15 MeV electrons and an isochronal annealing series has been carried out. The measurements have been performed after each annealing step and six electron traps located in the energy band gap range of 0.42-1.6 eV below the conduction band edge (Ec) have been detected.


1976 ◽  
Vol 40 (4) ◽  
pp. 356-359 ◽  
Author(s):  
P. G. Pinchuk ◽  
V. N. Bykov ◽  
G. A. Birzhevoi ◽  
Yu. V. Alekseev ◽  
A. G. Vakhtin ◽  
...  

2020 ◽  
Vol 128 (2) ◽  
pp. 211
Author(s):  
Д.В. Ананченко ◽  
С.В. Никифоров ◽  
Г.Р. Рамазанова ◽  
Р.И. Баталов ◽  
Р.М. Баязитов ◽  
...  

Luminescence and thermal stability of defects formed in alpha-Al2O3 single crystals under pulsed ion beam treatment (C+/H+ ions with an energy 300 keV, pulse duration 80 ns) were investigated. This type of irradiation leads to the intensive generation of both single F- and F+-centers and more complex defects (F2-type aggregate centers or vacancy-impurity complexes) in alpha-Al2O3. It was confirmed by the results of optical absorption, photoluminescence, and pulsed cathodoluminescence measurements. The thermal stability of F-type defects formed in alpha-Al2O3 under the pulsed ion beam treatment is comparable to the stability of radiation-induced defects in neutron-irradiated samples.


2009 ◽  
Vol 615-617 ◽  
pp. 853-856
Author(s):  
Alexander M. Ivanov ◽  
Nikita B. Strokan ◽  
Alexander A. Lebedev ◽  
Vitalii V. Kozlovski

The effect of a cycle "introduction of defects – annealing – introduction of defects" on the SiC properties has been studied to know the degradation of characteristics of p-n- nuclear radiation detectors. The irradiation with 8 МeV protons at fluences of about 3×1014 сm-2 was used. The annealing was carried out in two stages one-hour at temperatures of 600 and 700 °С. Nuclear spectrometric techniques with 5.8 MeV -particles were employed to test the detectors. The charge collection efficiency and features of the amplitude spectrum were determined to study the capture of charge carriers by radiation-induced defects. Measurements were made in the temperature range of 20–250 °С. It is shown that at 250 °С there is a decrease in the carriers capture. The form of the amplitude spectrum essentially improves. The first irradiation and the subsequent annealing do not change significantly the radiation hardness of SiC. During the second irradiation the effective concentration of the introduced centers is 1.3 times higher. This result may be due to the high total fluence of protons, 6×1014 cm-2.


2015 ◽  
Vol 43 (1) ◽  
pp. 31-31
Author(s):  
T. Riegler ◽  
T. Allard ◽  
D. Beaufort ◽  
J.-L. Cantin ◽  
H. J. von Bardeleben

2000 ◽  
Vol 650 ◽  
Author(s):  
A. Meldrum

ABSTRACTTitanite (CaTiSiO5) is a widely occurring accessory mineral that contains ppm-level concentrations of U and Th. Radiation effects in titanite are important because this phase is commonly-used for U-Pb age dating of rock formations, and it is also the main crystalline constituent of certain glass-ceramic nuclear waste forms. Previous work suggested that titanite is highly susceptible to natural alpha-decay-induced amorphization, but ion irradiation experiments have so far been reported only at room temperature. In this work, the first temperature-dependent amorphization data for titanite are reported. High-purity single-crystal specimens from the Khan Mine, Namibia were characterized by analytical electron microscopy and powder XRD. Suitable specimens were then irradiated in-situ at the IVEM Facility using 800 keV Kr ions at temperatures ranging from 30 to 1100 K. Conventional imaging and diffraction techniques were used to monitor the transformation to the amorphous state. Titanite was amorphized at a relatively low dose over the entire temperature range investigated. Limited crystallization of ion-beam-amorphized titanite was observed at temperatures above 1100 K.


2015 ◽  
Vol 43 (1) ◽  
pp. 23-30 ◽  
Author(s):  
T. Riegler ◽  
T. Allard ◽  
D. Beaufort ◽  
J.-L. Cantin ◽  
H. J. von Bardeleben

1994 ◽  
Vol 9 (3) ◽  
pp. 688-698 ◽  
Author(s):  
William J. Weber ◽  
Rodney C. Ewing ◽  
Lu-Min Wang

A comprehensive understanding of radiation effects in zircon, ZrSiO4, over a broad range of time scales (0.5 h to 570 million years) has been obtained by a study of natural zircon, Pu-doped zircon, and ion-beam irradiated zircon. Radiation damage in zircon results in the simultaneous accumulation of both point defects and amorphous regions. The amorphization process is consistent with models based on the multiple overlap of particle tracks, suggesting that amorphization occurs as a result of a critical defect concentration. The amorphization dose increases with temperature in two stages (below 300 K and above 473 K) and is nearly independent of the damage source (α-decay events or heavy-ion beams) at 300 K. Recrystallization of completely amorphous zircon occurs above 1300 K and is a two-step process that involves the initial formation of pseudo-cubic ZrO2.


Author(s):  
H. Watanabe ◽  
B. Kabius ◽  
B. Roas ◽  
K. Urban

Recently it was reported that the critical current density(Jc) of YBa2Cu2O7, in the presence of magnetic field, is enhanced by ion irradiation. The enhancement is thought to be due to the pinning of the magnetic flux lines by radiation-induced defects or by structural disorder. The aim of the present study was to understand the fundamental mechanisms of the defect formation in association with the pinning effect in YBa2Cu3O7 by means of high-resolution electron microscopy(HRTEM).The YBa2Cu3O7 specimens were prepared by laser ablation in an insitu process. During deposition, a substrate temperature and oxygen atmosphere were kept at about 1073 K and 0.4 mbar, respectively. In this way high quality epitaxially films can be obtained with the caxis parallel to the <100 > SrTiO3 substrate normal. The specimens were irradiated at a temperature of 77 K with 173 MeV Xe ions up to a dose of 3.0 × 1016 m−2.


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