Carrier Density Modulation in PbSe Quantum Dot Films via In-Solution Ligand Exchange

MRS Advances ◽  
2020 ◽  
Vol 5 (40-41) ◽  
pp. 2091-2099
Author(s):  
Tom Nakotte ◽  
Hongmei Luo ◽  
Jeff Pietryga
Keyword(s):  
Ligand Exchange ◽  
Carrier Density ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Significant Drop ◽  
Structure Capacitance ◽  
Density Modulation ◽  
Effect Transistor ◽  
Post Deposition ◽  
Density Results

AbstractIn-solution ligand exchange of PbSe QDs is used to examine the effect of capping ligand on the carrier density of PbSe QD films. Results show that carrier density can be modulated by a factor of 5 by choice of ligand without any additional post deposition treatments. Proper fabrication and measurement conditions for calculating carrier densities from C-V measurements using a sandwich structure on P-doped Si/SiO2/Al2O3/QD/Au structure capacitance devices are outlined. Combining carrier density results with field-effect-transistor measurements, promising ligands which display lower carrier densities without having a significant drop off in carrier mobility are identified as candidates for photodetection purposes.

Patterning rubrene crystalline thin films for sub-micrometer channel length field-effect transistor arrays

2014 ◽  
Vol 2 (44) ◽  
pp. 9359-9363 ◽  
Author(s):  
Juan Zhu ◽  
Wenchong Wang ◽  
Qigang Zhong ◽  
Liqiang Li ◽  
Chuan Du ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Channel Length ◽  
Organic Films ◽  
Porous Structures ◽  
Patterned Growth ◽  
Effect Transistor ◽  
Magnitude Difference

The patterned growth of crystalline rubrene films directly on electrodes is demonstrated. In addition, organic films with close packed and porous structures are locally achieved by controlling the electrode spaces, resulting in a two orders of magnitude difference in carrier mobility.

scholarly journals Diamond Based Field-Effect Transistors of Zr Gate withSiNxDielectric Layers

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
W. Wang ◽  
C. Hu ◽  
S. Y. Li ◽  
F. N. Li ◽  
Z. C. Liu ◽  
...  
Keyword(s):  
Carrier Density ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Conduction Channel ◽  
Effect Transistor ◽  
P Type ◽  
Interface Bond ◽  
Transfer Properties

Investigation of Zr-gate diamond field-effect transistor withSiNxdielectric layers (SD-FET) has been carried out. SD-FET works in normally on depletion mode with p-type channel, whose sheet carrier density and hole mobility are evaluated to be 2.17 × 1013 cm−2and 24.4 cm2·V−1·s−1, respectively. The output and transfer properties indicate the preservation of conduction channel because of theSiNxdielectric layer, which may be explained by the interface bond of C-N. High voltage up to −200 V is applied to the device, and no breakdown is observed. For comparison, another traditional surface channel FET (SC-FET) is also fabricated.

Modeling the Carrier Mobility in Nanowire Channel FET

2007 ◽  
Vol 1017 ◽  
Author(s):  
Werner Prost ◽  
Kai Blekker ◽  
Quoc-Thai Do ◽  
Ingo Regolin ◽  
Sven Müller ◽  
...  
Keyword(s):  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Static Field ◽  
Device Model ◽  
Inas Nanowires ◽  
Effect Transistor ◽  
Long Channel

AbstractWe report on the extraction of carrier type, and mobility in semiconductor nanowires by adopting experimental nanowire field-effect transistor device data to a long channel MISFET device model. Numerous field-effect transistors were fabricated using n-InAs nanowires of a diameter of 50 nm as a channel. The I-V data of devices were analyzed at low to medium drain current in order to reduce the effect of extrinsic resistances. The gate capacitance is determined by an electro-static field simulation tool. The carrier mobility remains as the only parameter to fit experimental to modeled device data. The electron mobility in n-InAs nanowires is evaluated to µ = 13,000 cm2/Vs while for comparison n-ZnO nanowires exhibit a mobility of 800 cm2/Vs.

Effect of Al2O3 Deposition and Subsequent Annealing on Passivation of Defects in Ge-Rich SiGe-on-Insulator

2011 ◽  
Vol 470 ◽  
pp. 79-84
Author(s):  
Hai Gui Yang ◽  
Masatoshi Iyota ◽  
Shogo Ikeura ◽  
Dong Wang ◽  
Hiroshi Nakashima
Keyword(s):  
Field Effect Transistor ◽  
Surface Reaction ◽  
Hole Concentration ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electrical Characteristics ◽  
Post Deposition Annealing ◽  
Back Gate ◽  
Effect Transistor ◽  
Post Deposition

Al2O3 deposition and subsequent post-deposition annealing (Al2O3-PDA) is proposed as an effective method to passivate electrically active defects in Ge-rich SiGe-on-insulator (SGOI) substrates. We found that Al2O3-PDA could not only suppress the surface reaction during Al-PDA, but could also effectively reduce the defect-induced acceptor and hole concentration in Ge-rich SGOI. Al2O3-PDA greatly improves the electrical characteristics of a back-gate metal-oxide-semiconductor field-effect transistor fabricated on Ge-rich SGOI.

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