scholarly journals Density-Functional Tight-Binding for Platinum Clusters and Bulk: Electronic vs Repulsive Parameters

MRS Advances ◽  
2019 ◽  
Vol 4 (33-34) ◽  
pp. 1821-1832
Author(s):  
Ka Hung Lee ◽  
Van Quan Vuong ◽  
Victor Fung ◽  
De-en Jiang ◽  
Stephan Irle

ABSTRACTWe present a general purpose Pt-Pt density-functional tight-binding (DFTB) parameter for Pt clusters as well as bulk, using a genetic algorithm (GA) to automatize the parameterization effort. First we quantify the improvement possible by only optimizing the repulsive potential alone, and second we investigate the effect of improving the electronic parameter as well. During both parameterization efforts we employed our own training set and test sets, with one set containing ∼20,000 spin-polarized DFT structures. We analyze the performance of our two DFTB Pt-Pt parameter sets against density functional theory (DFT) as well as an earlier DFTB Pt-Pt parameters. Our study sheds light on the role of both repulsive and electronic parameters with regards to DFTB performance.

Author(s):  
Sandhya Chintalapati ◽  
Yuan Ping Feng

The magnetic property of Si-doped AlN with Al-vacancy is studied using first principles calculations based on spin polarized density functional theory. The Si dopant alone does not introduce the magnetic moment in AlN. However, the doping of Si in AlN reduces the formation energy caused by Al-vacancy, and stabilizes the spin polarized state. The magnetic moments are mainly localized on N atoms surrounding the defect. The strong ferromagnetic state is obtained in AlN due to the combined role of Al-vacancy and Si-dopant.


2020 ◽  
Vol 6 (2) ◽  
pp. 27
Author(s):  
Elisabetta del Castillo ◽  
Fausto Cargnoni ◽  
Raffaella Soave ◽  
Mario Italo Trioni

Spintronics is one of the most exciting applications of graphene-based devices. In this work Density Functional Theory is used to study a nanojunction consisting of two semi-infinite graphene electrodes contacted with an iron-porphyrin (FeP) molecule, which plays the role of spin filter for the incoming unpolarized electrons. The graphene-FeP contact closely resembles the recently synthesized porphyrin-decorated graphene [He et al., Nat. Chem. 2017, 9, 33–38]. The analysis of the spectral properties of the system shows a variation of the orbital occupancy with respect to the isolated FeP molecule and an hybridization with the delocalized states of the substrate, while the overall magnetic moment remains unchanged. Doping the electrodes with boron or nitrogen atoms induces a relevant rearrangement in the electronic structure of the junction. Upon B doping the current becomes significantly spin polarized, while N doping induces a marked Negative Differential Resistivity effect. We have also investigated the possible exploitation of the FeP junction as a gas sensor device. We demonstrate that the interaction of CO and O2 molecules with the Fe atom, while being strong enough to be stable at room temperature (2.0 eV and 1.1 eV, respectively), induces only minor effects on the electronic properties of the junction. Interestingly, a quenching of the spin polarization of the current is observed in the B-doped system.


2020 ◽  
Author(s):  
Tulin Okbinoglu ◽  
Pierre Kennepohl

Molecules containing sulfur-nitrogen bonds, like sulfonamides, have long been of interest due to their many uses and chemical properties. Understanding the factors that cause sulfonamide reactivity is important, yet their continues to be controversy regarding the relevance of S-N π bonding in describing these species. In this paper, we use sulfur K-edge x-ray absorption spectroscopy (XAS) in conjunction with density functional theory (DFT) to explore the role of S<sub>3p</sub> contributions to π-bonding in sulfonamides, sulfinamides and sulfenamides. We explore the nature of electron distribution of the sulfur atom and its nearest neighbors and extend the scope to explore the effects on rotational barriers along the sulfur-nitrogen axis. The experimental XAS data together with TD-DFT calculations confirm that sulfonamides, and the other sulfinated amides in this series, have essentially no S-N π bonding involving S<sub>3p</sub> contributions and that electron repulsion and is the dominant force that affect rotational barriers.


2021 ◽  
Author(s):  
Xinpeng Zhao ◽  
Zhimin Zhou ◽  
hu luo ◽  
Yanfei Zhang ◽  
Wang Liu ◽  
...  

Combined experiments and density functional theory (DFT) calculations provided insights into the role of the environment-friendly γ-valerolactone (GVL) as a solvent in the hydrothermal conversion of glucose into lactic acid...


Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 1032
Author(s):  
Anirban Naskar ◽  
Rabi Khanal ◽  
Samrat Choudhury

The electronic structure of a series perovskites ABX3 (A = Cs; B = Ca, Sr, and Ba; X = F, Cl, Br, and I) in the presence and absence of antisite defect XB were systematically investigated based on density-functional-theory calculations. Both cubic and orthorhombic perovskites were considered. It was observed that for certain perovskite compositions and crystal structure, presence of antisite point defect leads to the formation of electronic defect state(s) within the band gap. We showed that both the type of electronic defect states and their individual energy level location within the bandgap can be predicted based on easily available intrinsic properties of the constituent elements, such as the bond-dissociation energy of the B–X and X–X bond, the X–X covalent bond length, and the atomic size of halide (X) as well as structural characteristic such as B–X–B bond angle. Overall, this work provides a science-based generic principle to design the electronic states within the band structure in Cs-based perovskites in presence of point defects such as antisite defect.


2021 ◽  
Vol 7 (2) ◽  
pp. eabd4248
Author(s):  
Fengmiao Li ◽  
Yuting Zou ◽  
Myung-Geun Han ◽  
Kateryna Foyevtsova ◽  
Hyungki Shin ◽  
...  

Titanium monoxide (TiO), an important member of the rock salt 3d transition-metal monoxides, has not been studied in the stoichiometric single-crystal form. It has been challenging to prepare stoichiometric TiO due to the highly reactive Ti2+. We adapt a closely lattice-matched MgO(001) substrate and report the successful growth of single-crystalline TiO(001) film using molecular beam epitaxy. This enables a first-time study of stoichiometric TiO thin films, showing that TiO is metal but in proximity to Mott insulating state. We observe a transition to the superconducting phase below 0.5 K close to that of Ti metal. Density functional theory (DFT) and a DFT-based tight-binding model demonstrate the extreme importance of direct Ti–Ti bonding in TiO, suggesting that similar superconductivity exists in TiO and Ti metal. Our work introduces the new concept that TiO behaves more similar to its metal counterpart, distinguishing it from other 3d transition-metal monoxides.


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