Microstructure and Mechanical property of Porous Nickel aluminides Fabricated by Reactive Synthesis with Space Holder Powder

MRS Advances ◽  
2019 ◽  
Vol 4 (25-26) ◽  
pp. 1515-1521 ◽  
Author(s):  
Yunmao Shu ◽  
Asuka Suzuki ◽  
Naoki Takata ◽  
Makoto Kobashi

ABSTRACTEffect of Ni:Al blending ratio on porous structure of porous nickel aluminides fabricated through reactive synthesis with space holder particles were investigated. Fabricated porous nickel aluminides had large pores derived from NaCl space holder particles and small pores derived from reactions between Ni and Al. Porosity and size of the small pores increased with increasing Al content in the raw powder mixture. Compressive property of porous NiAl are also investigated. porous NiAl exhibited good energy-absorption properties with relatively high plateau stress, high plateau end strain, and relatively flat plateau stress. This study suggests the possibility of intermetallic-based porous materials as high-performance energy absorber.

2017 ◽  
Vol 5 (39) ◽  
pp. 20709-20719 ◽  
Author(s):  
Zhihong Wang ◽  
Yingming Yan ◽  
Yifu Chen ◽  
Wenqiao Han ◽  
Mengting Liu ◽  
...  

3D-Hierarchical micron porous nickel foam was created using a simple redox process in a CH4–O2 gas mixture at high temperatures. This process is simple and cost effective, avoiding the use of sacrificial materials or templates.


2019 ◽  
Vol 484 (4) ◽  
pp. 436-440
Author(s):  
A. G. Gnedovets ◽  
V. A. Zelenskii ◽  
A. B. Ankudinov ◽  
M. I. Alymov

This paper reports on the creation of a highly porous material with a hierarchical structure using powder metallurgy methods based on nickel nanopowder and ammonium bicarbonate NH4HCO3 as a space holder.


2015 ◽  
Vol 7 (34) ◽  
pp. 19316-19323 ◽  
Author(s):  
Xiaoming Li ◽  
Qiguang Li ◽  
Ye Wu ◽  
Muchen Rui ◽  
Haibo Zeng

Author(s):  
Baishakhi Mazumder ◽  
Jith Sarker

Abstract(AlxGa1−x)2O3 is a novel ultra‐wide bandgap semiconductor with the potential to dominate future power electronics industries. High‐performance devices demand high Al content in (AlxGa1−x)2O3 but are limited by crystallinity degradation resulting from phase separation. Additionally, the solubility limit of Al is still under debate, and conclusive research is in progress. (AlxGa1−x)2O3 is also limited in high‐frequency applications owing to low carrier mobility and requires n‐type doping. For commercializing this material, the major obstacle is understanding dopant's behavior in the host (AlxGa1−x)2O3. To investigate these issues, an advanced characterization technique, atom probe tomography (APT), was employed to analyze the structural‐chemical evolution of (AlxGa1−x)2O3. In this review, we summarized our recent works on the structure‐chemistry investigation of (AlxGa1−x)2O3 with alloy composition and doping interaction. We introduced machine learning algorithms on APT data to reveal unrivaled knowledge, previously not achievable with conventional methodologies. The outstanding capabilities of APT to study (AlxGa1−x)2O3 with Al composition and doping will be considered significant for the wide bandgap semiconductors community.


2006 ◽  
Vol 302-303 ◽  
pp. 444-450
Author(s):  
Yin Zhang ◽  
Qian Feng Yao ◽  
Yong Gang Ding

In this paper, the study and application of an entirely new energy-saving residential building structure, whose wall is constructed with multi-ribbed composite wall and latent frame. Based on experimental research and theoretical analysis, it was found that the structure system had good seismic behaviors, strong structure adaptability and good energy-saving effect. At the same time, notable social and economic benefits have been shown in several examples.


CrystEngComm ◽  
2020 ◽  
Vol 22 (18) ◽  
pp. 3242-3242
Author(s):  
Chenglan Zhao ◽  
Yuqian Jiang ◽  
Shunfei Liang ◽  
Fang Gao ◽  
Li Xie ◽  
...  

Correction for ‘Two-dimensional porous nickel oxalate thin sheets constructed by ultrathin nanosheets as electrode materials for high-performance aqueous supercapacitors’ by Chenglan Zhao et al., CrystEngComm, 2020, DOI: 10.1039/d0ce00268b.


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