Low-temperature solution-processed sol-gel K-rich KNN thin films for flexible electronics

MRS Advances ◽  
2018 ◽  
Vol 3 (5) ◽  
pp. 269-275 ◽  
Author(s):  
Rajinder Singh Deol ◽  
Meenal Mehra ◽  
Bhaskar Mitra ◽  
Madhusudan Singh

ABSTRACTSputtered lead-free piezoelectric materials like potassium sodium niobate (K1-xNaxNbO3 or KNN) have received significant technological interest in recent years in light of several reports of piezoelectric constants comparable to lead zirconium titanate (PZT). Potential applications include self-powered sensors, actuators, and low acoustic impedance transducers. For large area printed applications, it is vital to develop low-temperature solution processed deposition methods. In this work, sol-gel synthesis of K-rich (70:30) KNN was carried out under an argon atmosphere, using acetate precursors, followed by precipitation of white KNN powder upon careful drying. Powder X-ray diffraction (XRD) scans of the product with a Cu Kα source after calcination revealed a dominant (110) peak, accompanied by smaller (100) and (010) peaks, in agreement with published standard KNN data. The composition of K-rich phase was confirmed using energy dispersive X-ray spectroscopy (EDX). To produce thin films, the sol was spin coated on a surface-treated Au-coated Si substrate, followed by slow annealing to obtain low surface roughness films (RMS roughness ﹤∼10 nm) of thickness ∼200 nm after solvent removal. Atomic force microscopy (AFM) scans revealed an unremarkable amorphous film. However, deposition of the sol on the Au-coated backside of Si wafer under similar processing conditions revealed limited polycrystalline film formation observed using optical profilometry. Thin film XRD measurements of the deposited film reveal orthorhombic phase growth of KNN, though the unannealed film was more amorphous than the calcined KNN film. Preliminary piezoresponse force microscopy (PFM) scans were used to estimate a piezoelectric constant (d33) ∼ 2.7 pC/N, consistent with the general expectation of lower piezoelectric constants for thin sol-gel films. The highest processing temperature used at any step during the deposition process was 90°C, consistent with the applications involving flexible polyimide substrates. This low-temperature thin-film growth suggests a potential route towards integration of large area piezoelectric generators for environmentally-friendly autonomous flexible sensor applications, with better control of phase and composition during the solution-phase deposition of KNN.

2017 ◽  
Vol 5 (10) ◽  
pp. 2524-2530 ◽  
Author(s):  
Ao Liu ◽  
Shengbin Nie ◽  
Guoxia Liu ◽  
Huihui Zhu ◽  
Chundan Zhu ◽  
...  

Solution-processed p-type Cu2O thin films were fabricated via in-situ reaction of CuI film in NaOH solution and their applications in thin-film transistors were successfully demonstrated.


2020 ◽  
Vol 183 ◽  
pp. 05002 ◽  
Author(s):  
Hamza Belkhanchi ◽  
Younes Ziat ◽  
Maryama Hammi ◽  
Charaf Laghlimi ◽  
Abdelaziz Moutcine ◽  
...  

In this study, we have investigated the surface analysis and optoelectronic properties on the synthesis of N-CNT/TiO2 composites thin films, using sol gel method for a dye synthetized solar cell (DSSC) which is found to be simple and economical route. The titanium dioxide based solar cells are an exciting photovoltaic candidate; they are promising for the realization of large area devices. That can be synthetized by room temperature solution processing, with high photoactive performance. In the present work, we stated comparable efficiencies by directing our investigation on obtaining Sol Gel thin films based on N-CNT/TiO2, by dispersing nitrogen (N) doped carbon nanotubes (N-CNTs) powders in titanium tetraisopropoxyde (TTIP). The samples were assessed in terms of optical properties, using UV—visible absorption spectroscopic techniques. After careful analysis of the results, we have concluded that the mentioned route is good and more efficient in terms of optoelectronic properties. The gap of “the neat” 0.00w% N-CNT/TiO2 is of 3eV, which is in a good agreement with similar gap of semiconductors. The incorporated “w%NCNTs” led to diminishing the Eg with increasing N-CNTs amount. These consequences are very encouraging for optoelectronic field.


2021 ◽  
Vol 723 ◽  
pp. 138594
Author(s):  
Qian Zhang ◽  
Cheng Ruan ◽  
Guodong Xia ◽  
Hongyu Gong ◽  
Sumei Wang

2014 ◽  
Vol 55 ◽  
pp. 99-105 ◽  
Author(s):  
Joohye Jung ◽  
Si Joon Kim ◽  
Keun Woo Lee ◽  
Doo Hyun Yoon ◽  
Yeong-gyu Kim ◽  
...  

2000 ◽  
Vol 617 ◽  
Author(s):  
Ian W. Boyd ◽  
Jun-Ying Zhang

AbstractIn this paper, UV-induced large area growth of high dielectric constant (Ta2O5, TiO2and PZT) and low dielectric constant (polyimide and porous silica) thin films by photo-CVD and sol-gel processing using excimer lamps, as well as the effect of low temperature LW annealing, are discussed. Ellipsometry, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), UV spectrophotometry, atomic force microscope (AFM), capacitance-voltage (C-V) and current-voltage (I-V) measurements have been employed to characterize oxide films grown and indicate them to be high quality layers. Leakage current densities as low as 9.0×10−8 Acm−2 and 1.95×10−7 Acm−2 at 0.5 MV/cm have been obtained for the as-grown Ta2O5 films formed by photo-induced sol-gel processing and photo-CVD. respectively - several orders of magnitude lower than for any other as-grown films prepared by any other technique. A subsequent low temperature (400°C) UV annealing step improves these to 2.0×10−9 Acm−2 and 6.4× 10−9 Acm−2, respectively. These values are essentially identical to those only previously formed for films annealed at temperatures between 600 and 1000°C. PZT thin films have also been deposited at low temperatures by photo-assisted decomposition of a PZT metal-organic sol-gel polymer using the 172 nm excimer lamp. Very low leakage current densities (10−7 A/cm2) can be achieved, which compared with layers grown by conventional thermal processing. Photo-induced deposition of low dielectric constant organic polymers for interlayer dielectrics has highlighted a significant role of photo effects on the curing of polyamic acid films. I-V measurements showed the leakage current density of the irradiated polymer films was over an order of magnitude smaller than has been obtained in the films prepared by thermal processing. Compared with conventional furnace processing, the photo-induced curing of the polyimide provided both reduced processing time and temperature, A new technique of low temperature photo-induced sol-gel process for the growth of low dielectric constant porous silicon dioxide thin films from TEOS sol-gel solutions with a 172 nm excimer lamp has also been successfully demonstrated. The dielectric constant values as low as 1.7 can be achieved at room temperature. The applications investigated so far clearly demonstrate that low cost high power excimer lamp systems can provide an interesting alternative to conventional UV lamps and excimer lasers for industrial large-scale low temperature materials processing.


2021 ◽  
Vol 7 (1) ◽  
pp. 14
Author(s):  
Dewi Suriyani Che Halin ◽  
Kamrosni Abdul Razak ◽  
Mohd Arif Anuar Mohd Salleh ◽  
Mohd Izrul Izwan Ramli ◽  
Mohd Mustafa Al Bakri Abdullah ◽  
...  

Ag/TiO2 thin films were prepared using the sol-gel spin coating method. The microstructural growth behaviors of the prepared Ag/TiO2 thin films were elucidated using real-time synchrotron radiation imaging, its structure was determined using grazing incidence X-ray diffraction (GIXRD), its morphology was imaged using the field emission scanning electron microscopy (FESEM), and its surface topography was examined using the atomic force microscope (AFM) in contact mode. The cubical shape was detected and identified as Ag, while the anatase, TiO2 thin film resembled a porous ring-like structure. It was found that each ring that coalesced and formed channels occurred at a low annealing temperature of 280 °C. The energy dispersive X-ray (EDX) result revealed a small amount of Ag presence in the Ag/TiO2 thin films. From the in-situ synchrotron radiation imaging, it was observed that as the annealing time increased, the growth of Ag/TiO2 also increased in terms of area and the number of junctions. The growth rate of Ag/TiO2 at 600 s was 47.26 µm2/s, and after 1200 s it decreased to 11.50 µm2/s and 11.55 µm2/s at 1800 s. Prolonged annealing will further decrease the growth rate to 5.94 µm2/s, 4.12 µm2/s and 4.86 µm2/s at 2400 s, 3000 s and 3600 s, respectively.


2010 ◽  
Vol 93-94 ◽  
pp. 231-234
Author(s):  
B. Hongthong ◽  
Satreerat K. Hodak ◽  
Sukkaneste Tungasmita

Strontium substituted hydroxyapatite(SrHAp) were fabricated both in the form of powder as reference and thin film by using inorganic precursor reaction. The sol-gel process has been used for the deposition of SrHAp layer on stainless steal 316L substrate by spin coating technique, after that the films were annealed in air at various temperatures. The chemical composition of SrHAp is represented (SrxCa1-x)5(PO4)3OH, where x is equal to 0, 0.5 and 1.0. Investigations of the phase structure of SrHAp were carried out by using X-ray diffraction technique (XRD). The results showed that strontium is incorporated into hydroxyapatite where its substitution for calcium increases in the lattice parameters, and Sr3(PO4)2 can be detected at 900°C. The SEM micrographs showed that SrHAp films exhibited porous structure before develop to a cross-linking structure.


2009 ◽  
Vol 79-82 ◽  
pp. 747-750 ◽  
Author(s):  
Dong Qing Liu ◽  
Wen Wei Zheng ◽  
Hai Feng Cheng ◽  
Hai Tao Liu

Thermochromic vanadium dioxide (VO2) exhibits a semi-conducting to metallic phase transition at about 68°C, involving strong variations in electrical and optical properties. A simple method was proposed to prepare VO2 thin films from easily gained V2O5 thin films. The detailed thermodynamic calculation was done and the results show that V2O5 will decompose to VO2 when the post annealing temperature reaches 550°C at the atmospheric pressure of less than 0.06Pa. The initial V2O5 films were prepared by sol-gel method on fused-quartz substrates. Different post annealing conditions were studied. The derived VO2 thin film samples were characterized using X-ray diffraction and X-ray photoelectron spectroscopy. The electrical resistance and infrared emissivity of VO2 thin films under different temperatures were measured. The results show that the VO2 thin film derived from the V2O5 thin film annealed at 550°C for 10 hours is pure dioxide of vanadium without other valences. It was observed that the resistance of VO2 thin film with thickness about 600nm can change by 4 orders of magnitude and the 7.5-14μm emissivity can change by 0.6 during the phase transition.


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