Stress, Hardness and Elastic Modulus of Bismuth Triiodide (BiI3)

MRS Advances ◽  
2018 ◽  
Vol 3 (64) ◽  
pp. 3925-3931 ◽  
Author(s):  
Natália F. Coutinho ◽  
Silvia Cucatti ◽  
Rafael B. Merlo ◽  
Vinicius G. Antunes ◽  
Fernando Alvarez ◽  
...  
Keyword(s):  
Thin Films ◽  
Elastic Modulus ◽  
Thermal Evaporation ◽  
Lead Free ◽  
X Ray ◽  
Photovoltaic Materials ◽  
Maximum Penetration Depth ◽  
Bismuth Triiodide ◽  
Maximum Penetration ◽  
Beam Technique

ABSTRACTBismuth triiodide (BiI3) has been studied aiming the development of lead-free photovoltaic materials. It can also be used as X-ray detectors due to the high density of its elements (bismuth and iodine). We investigate the mechanical stress, hardness, and elastic properties of BiI3 thin films deposited by thermal evaporation. The stress was determined by the bending beam technique using the Stoney equation. The films are tensile with stress of approximately 27 MPa. The hardness and the elastic modulus were determined by nanoindentation technique using a Berkovich diamond tip. The hardness of the films is approximately 0.8 GPa and the reduced Young´s modulus is ∼28 GPa for maximum penetration depth of 10% of the film thickness.

Structural and optical properties of Tin Oxide and Indium doped SnO2 thin films deposited by thermal evaporation technique

2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Tin Oxide ◽  
Thermal Evaporation ◽  
Pure Sno2 ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Evaporation Technique ◽  
Sno2 Thin Films

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.

X- ray diffraction and dielectric properties of PbSe thin films

2019 ◽  
Vol 15 (34) ◽  
pp. 1-14
Author(s):  
Bushra A. Hasan
Keyword(s):  
Thin Films ◽  
Thermal Activation ◽  
Thermal Evaporation ◽  
Thermal Activation Energy ◽  
Dielectric Constants ◽  
Conductivity Measurements ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates

Lead selenide PbSe thin films of different thicknesses (300, 500, and 700 nm) were deposited under vacuum using thermal evaporation method on glass substrates. X-ray diffraction measurements showed that increasing of thickness lead to well crystallize the prepared samples, such that the crystallite size increases while the dislocation density decreases with thickness increasing. A.C conductivity, dielectric constants, and loss tangent are studied as function to thickness, frequency (10kHz-10MHz) and temperatures (293K-493K). The conductivity measurements confirm confirmed that hopping is the mechanism responsible for the conduction process. Increasing of thickness decreases the thermal activation energy estimated from Arhinus equation is found to decrease with thickness increasing. The increase of thickness lead to reduce the polarizability α while the increasing of temperature lead to increase α.

Compositional, Structural and Morphological Analyses of Bulk GeS Alloy and its Thin Films

2021 ◽  
Vol 1039 ◽  
pp. 398-405
Author(s):  
Munira M.J. Al-Haji ◽  
Raad M.S. Al-Haddad
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Thermal Evaporation ◽  
Source Material ◽  
Morphological Properties ◽  
X Ray Diffraction ◽  
Melt Quenching ◽  
X Ray ◽  
Vacuum Thermal Evaporation ◽  
Scanning Electron

Bulk Germanium monosulphide (GeS) alloy was synthesized using the usual melt-quenching technique. Its grains were used as the source material to deposit thin films by vacuum thermal evaporation. Thin-films samples were doped with 1, 2, and 3 at.% indium by thermal co-evaporation and annealed in a vacuum at temperatures 373, 473 and 550 K for an hour. Compositional, structural, and morphological properties of the bulk GeS alloy and its thin films were investigated by Energy Dispersive X-Ray Spectroscopy (EDS), X-Ray Diffraction (XRD), and Scanning Electron Microscopy (SEM) techniques. The analyses verified the stoichiometry (GeS) of the starting material in the prepared thin films. They also revealed that the thin films under study are amorphous, homogeneous, without any cracks deposited uniformly on the glass substrate with thickness 650 to 700 nm.

scholarly journals Properties of Nanostructure Bismuth Telluride Thin Films Using Thermal Evaporation

2017 ◽  
Vol 2017 ◽  
pp. 1-4 ◽  
Author(s):  
Swati Arora ◽  
Vivek Jaimini ◽  
Subodh Srivastava ◽  
Y. K. Vijay
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Bismuth Telluride ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Scanning Electron

Bismuth telluride has high thermoelectric performance at room temperature; in present work, various nanostructure thin films of bismuth telluride were fabricated on silicon substrates at room temperature using thermal evaporation method. Tellurium (Te) and bismuth (Bi) were deposited on silicon substrate in different ratio of thickness. These films were annealed at 50°C and 100°C. After heat treatment, the thin films attained the semiconductor nature. Samples were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM) to show granular growth.

X-ray diffraction and X-ray photoelectron spectroscopy characterization of sulfurized tin thin films deposited by thermal evaporation

2018 ◽  
Vol 645 ◽  
pp. 409-416
Author(s):  
Hiroto Oomae ◽  
Takahito Eguchi ◽  
Kunihiko Tanaka ◽  
Misao Yamane ◽  
Naofumi Ohtsu
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Thermal Evaporation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Tin Thin Films

Preparation and characterization of laser-ablated multicomponent chalcogenide thin films

1990 ◽  
Vol 5 (3) ◽  
pp. 511-514 ◽  
Author(s):  
Didarul Islam ◽  
C. E. Brient ◽  
R. L. Cappelletti
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Thermal Evaporation ◽  
Analytical Techniques ◽  
X Rays ◽  
Single Source ◽  
X Ray ◽  
Chalcogenide Thin Films ◽  
Scanning Electron

The preparation of multicomponent chalcogenide glassy thin films from bulk targets by laser ablation is described. The film stoichiometries are characterized by proton-induced x-ray emission (PIXE). Compared to single source thermal evaporation, laser ablation is found to preserve starting stoichiometries in the resulting thin films far more accurately. Thermally evaporated films were studied both by PIXE and by energy dispersed x rays (EDX) produced in a scanning electron microscope, and the results of these two analytical techniques compare well.

scholarly journals Preparation and Microstructure of acetate-based lead-free BSZT ferrolectric thin films using sol-gel technique

2019 ◽  
Vol 35 (1) ◽  
Author(s):  
Vu Thu Hien
Keyword(s):  
Thin Films ◽  
Conduction Mechanism ◽  
Lattice Structure ◽  
Sol Gel ◽  
Lead Free ◽  
Crystalline Lattice ◽  
Plane Symmetry ◽  
X Ray ◽  
Gel Technique ◽  
Current Behaviour

(Ba0.85Sr0.15)(Ti0.9Zr0.1)O3 (BSZT) lead-free ferroelectric thin films at the vicinity of the morphotropic phase boundary (MPB) were successfully deposited on Pt/Ti/SiO2/Si using a modified spin-coated sol-gel method. Microstructure and electrical properties of the thin film were studied. High resolution synchrotron X–ray powder diffraction (SXRD) combinied with Rietveld refinement revealed the samples crystalize in tetragonal perovskite structure with in-plane symmetry (c < a). Raman spectra also confirmed a tetragonal perovskite crystalline lattice structure. Polarisation studies demonstrate that BSZT films exhibit a rather high saturation polarisation of 22.25 µC cm−2. Leakage current behaviour was obtained and possible conduction mechanism is discussed.

Real-Time Investigations on the Formation of Cu(In,Ga)Se2 While Annealing Precursors Produced with a Combination of Sputtering and Thermal Evaporation

2007 ◽  
Vol 1012 ◽  
Author(s):  
Stefan Jost ◽  
Frank Hergert ◽  
Rainer Hock ◽  
Michael Purwins
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Thermal Evaporation ◽  
Indium Selenide ◽  
Transfer Reactions ◽  
X Ray Diffraction ◽  
X Ray ◽  
Precursor Phase ◽  
Elemental Layer

AbstractWe have investigated the formation of Cu(In,Ga)Se2 thin films by real-time X-ray diffraction (XRD) experiments while annealing differently deposited and composed stacked elemental layer (SEL) precursors.The in-situ measurements during the selenization of bi-layered Cu/In precursors reveal, that the semiconductor formation process is similar for precursors with thermally evaporated or sputtered indium. In both cases, the formation of binary copper and indium selenides is observed at temperatures around the melting point of selenium. After subsequent selenium transfer reactions, the chalcopyrite CuInSe2 is formed from the educt phases Cu2-xSe and InSe.The addition of gallium leads to the formation of the intermetallic precursor phase Cu9Ga4, which reduces the overall amount of copper and gallium selenides at process temperatures above 500 K. This causes an ongoing selenization in the indium selenium subsystem, which results in the formation of CuInSe2 from the educt phases Cu2-xSe and the selenium richest indium selenide g-In2Se3.

TRANSPORT PROPERTIES OF THERMALLY EVAPORATED In2Se3 THIN FILMS

2009 ◽  
Vol 16 (05) ◽  
pp. 723-729 ◽  
Author(s):  
D. NITHYAPRAKASH ◽  
B. PUNITHAVENI ◽  
J. CHANDRASEKARAN
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Ac Conductivity ◽  
Thermal Evaporation ◽  
Frequency Range ◽  
X Ray Diffraction ◽  
Cbh Model ◽  
X Ray ◽  
Correlated Barrier Hopping ◽  
Tan Δ

Thin films of In2Se3 were prepared by thermal evaporation. X-ray diffraction indicated that the as-grown films were amorphous in nature and became polycrystalline γ-In2Se3 films after annealing. The ac conductivity and dielectric properties of In2Se3 films have been investigated in the frequency range 100 Hz–100 kHz. The ac conductivity σ ac is found to be proportional to ωn where n < 1. The temperature dependence of both ac conductivity and the parameter n is reasonably well interpreted by the correlated barrier hopping (CBH) model. The values of dielectric constant ε and loss tangent tan δ were found to increase with frequency and temperature. The ac conductivity of the films was found to be hopping mechanism. In I–V characteristic for different field and temperature were studied and it has been found that the conduction process is Poole–Frenkel type.

Structural and Optical Properties of Thermally Evaporated BiSb2S3 Thin Films

2013 ◽  
Vol 678 ◽  
pp. 123-130 ◽  
Author(s):  
K. Kandaswamy ◽  
Panneerselvam Chirstopher Selvin ◽  
B. Nalini ◽  
I. Mohamed Abdulla ◽  
K.P. Abhilash
Keyword(s):  
Thin Films ◽  
Thermal Evaporation ◽  
Orthorhombic Phase ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Vacuum Thermal Evaporation ◽  
Different Thickness ◽  
Absorption Measurements

Thin films of Bi1.5(Sb2S3)0.5of different thickness were deposited on glass substrate by vacuum thermal evaporation method and annealed at different temperature. The elemental compositions of the films were confirmed by energy dispersive X-ray analysis (EDAX). The prepared films were structurally and morphologically characterized by X-ray diffraction (XRD) and microscopic (SEM & AFM) techniques respectively. It has been confirmed that the films possess polycrystalline nature with orthorhombic phase and the grain size of the films vary from 27.92 to 81.37 nm. The observed bandgap energies (varying from 1.787eV to 1.963 eV) of the films and its temperature dependence were estimated from optical absorption measurements.

Sign in / Sign up

Export Citation Format

Share Document