Theoretical Investigations Of Interfacial Scattering Effects On Thermoelectric Properties Of Bulk Nanostructured PbTe System

MRS Advances ◽  
2018 ◽  
Vol 3 (24) ◽  
pp. 1329-1334 ◽  
Author(s):  
Neeleshwar Sonnathi ◽  
Anjali Panwar ◽  
Vikas Malik ◽  
Anjana Bagga
Keyword(s):  
Thermoelectric Properties ◽  
Power Factor ◽  
Room Temperature ◽  
Bulk Material ◽  
Theoretical Modelling ◽  
Boltzmann Transport ◽  
Energy Filtering ◽  
Electronic Parameters ◽  
Spark Plasma ◽  
Interfacial Scattering

ABSTRACTEnhancement of thermoelectric properties at room temperature has been recently demonstrated by spark plasma sintered PbTe nanocubes as compared to other PbTe nanostructures as well as Bulk material. The Seebeck coefficient has been reported to be 400 µV/K which is much higher than the bulk. Moreover, a moderate electrical conductivity ∼ 8000 S/m at room temperature results in considerable higher value of power factor S2σ ∼ 1.28 x 10-3 Wm-1K-2. The enhanced thermoelectric properties have been conjectured to be present due to energy filtering effects at numerous interfaces introduced by nanostructuring. We study how the interfacial scattering affects the power factor by performing theoretical modelling based on Boltzmann Transport Equation (BTE). We also investigate in detail, the role of various electronic parameters such as size, shape, mobility and effective mass etc., on interfacial scattering to optimize its effect on power factor.

Enhanced Thermoelectric Properties of [Ca2CoO3-δ]0.62CoO2 Polycrystalline Bulk by Control of Microstructure and Oxygen Content

2002 ◽  
Vol 755 ◽  
Author(s):  
M. Sano ◽  
S. Horii ◽  
I. Matsubara ◽  
R. Funahashi ◽  
M. Shikano ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Seebeck Coefficient ◽  
Oxygen Content ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Room Temperature ◽  
Magnetic Alignment ◽  
Systematic Change ◽  
Plasma Sintering ◽  
Spark Plasma

ABSTRACTWe report preparation of highly grain-aligned and densified [Ca2CoO3-δ]0.62CoO2 bulks and a change of thermoelectric performance for their bulks with different oxygen deficiencies (dgrl). The highly c-axis aligned and highly densified samples which showed low electronic resistivities at room temperature, were obtained by combination of magnetic alignment and spark plasma sintering methods. Electronic resistivity p and Seebeck coefficient S along the ab plane were systematically changed with oxygen contents and a power factor was consequently enhanced up to 3.5×10--6 Wcm-1K-2 at 300K for the sample annealed at 500°C in air. Moreover, the magnetic properties also showed a systematic change with oxygen contents.

scholarly journals Impact of the iron substitution on the thermoelectric properties of Co 1− x Fe x S 2 ( x  ≤ 0.30)

2019 ◽  
Vol 377 (2152) ◽  
pp. 20180337 ◽  
Author(s):  
Ulises Acevedo Salas ◽  
Ismail Fourati ◽  
Jean Juraszek ◽  
Fabienne Richomme ◽  
Denis Pelloquin ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermal Properties ◽  
Thermoelectric Properties ◽  
Thermoelectric Material ◽  
Power Factor ◽  
Room Temperature ◽  
Low Carbon ◽  
Energy Materials ◽  
Work Samples ◽  
Lattice Part

The strong interplay between magnetism and transport can tune the thermoelectric properties in chalcogenides and oxides. In the case of ferromagnetic CoS 2 pyrite, it was previously shown that the power factor is large at room temperature, reaching 1 mW m −1  K −2 and abruptly increases for temperatures below the Curie transition ( T C ), an increase potentially due to a magnonic effect on the Seebeck ( S ) coefficient. The too large thermal conductivity approximately equal to 10.5 W m −1  K −1 at room temperature prevents this pyrite from being a good thermoelectric material. In this work, samples belonging to the Co 1− x Fe x S 2 pyrite family ( x  = 0, 0.15 and 0.30) have thus been investigated in order to modify the thermal properties by the introduction of disorder on the Co site. We show here that the thermal conductivity can indeed be reduced by such a substitution, but that this substitution predominantly induces a reduction of the electronic part of the thermal conductivity and not of the lattice part. Interestingly, the magnonic contribution to S below T C disappears as x increases, while at high T , S tends to a very similar value (close to −42 µV K −1 ) for all the samples investigated. This article is part of a discussion meeting issue ‘Energy materials for a low carbon future’.

scholarly journals Annealing Effect on the Thermoelectric Properties of Bi2Te3Thin Films Prepared by Thermal Evaporation Method

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Jyun-Min Lin ◽  
Ying-Chung Chen ◽  
Chi-Pi Lin
Keyword(s):  
Thin Films ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Thermal Evaporation ◽  
Thermal Evaporation Method ◽  
Si Substrates ◽  
Seebeck Coefficients

Bismuth telluride-based compounds are known to be the best thermoelectric materials within room temperature region, which exhibit potential applications in cooler or power generation. In this paper, thermal evaporation processes were adopted to fabricate the n-type Bi2Te3thin films on SiO2/Si substrates. The influence of thermal annealing on the microstructures and thermoelectric properties of Bi2Te3thin films was investigated in temperature range 100–250°C. The crystalline structures and morphologies were characterized by X-ray diffraction and field emission scanning electron microscope analyses. The Seebeck coefficients, electrical conductivity, and power factor were measured at room temperature. The experimental results showed that both the Seebeck coefficient and power factor were enhanced as the annealing temperature increased. When the annealing temperature increased to 250°C for 30 min, the Seebeck coefficient and power factor of n-type Bi2Te3-based thin films were found to be about −132.02 μV/K and 6.05 μW/cm·K2, respectively.

Improved thermoelectric properties of PEDOT:PSS polymer bulk prepared using spark plasma sintering

2018 ◽  
Vol 54 (19) ◽  
pp. 2429-2431 ◽  
Author(s):  
Zhen-Hua Ge ◽  
Yi Chang ◽  
Fu Li ◽  
Jingting Luo ◽  
Ping Fan
Keyword(s):  
Spark Plasma Sintering ◽  
Thermoelectric Properties ◽  
Bulk Material ◽  
Low Density ◽  
Inorganic Nanoparticle ◽  
Polymer Bulk ◽  
Plasma Sintering ◽  
Spark Plasma

A low-density PEDOT:PSS/inorganic nanoparticle composite bulk material was prepared by carrying out spark plasma sintering (SPS) at 100 °C.

Enhanced thermoelectric properties in PbTe Nanocomposites

2009 ◽  
Vol 1166 ◽  
Author(s):  
Hillary Kirby ◽  
Joshua Martin ◽  
Anuja Datta ◽  
Lidong Chen ◽  
George S. Nolas
Keyword(s):  
Thermoelectric Properties ◽  
Room Temperature ◽  
Room Temperature Resistivity ◽  
Phase Reaction ◽  
Conductivity Measurements ◽  
Temperature Dependent ◽  
Plasma Sintering ◽  
Spark Plasma ◽  
Temperature Dependent Thermal Conductivity ◽  
Temperature Resistivity

AbstractDimensional nanocomposites of PbTe with varying carrier concentrations were prepared from undoped and Ag doped PbTe nanocrystals synthesized utilizing an alkaline aqueous solution-phase reaction. The nanocrystals were densified by Spark Plasma Sintering (SPS) for room temperature resistivity, Hall, Seebeck coefficient, and temperature dependent thermal conductivity measurements. The nanocomposites show an enhancement in the thermoelectric properties compared to bulk PbTe with similar carrier concentrations, thus demonstrating a promising approach for enhanced thermoelectric performance.

Thermoelectric Properties of Mixed Rhenium Chalcogenides Re6Te15-x Sex (0 ≤ × ≤ 8)

1998 ◽  
Vol 545 ◽  
Author(s):  
S. Kilibarda Dalafave ◽  
J. Ziegler ◽  
H. Mcallister
Keyword(s):  
Thermoelectric Power ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Room Temperature ◽  
Energy Gap ◽  
Selenium Concentration ◽  
X Ray ◽  
Tetragonal Lattice ◽  
Factor Α ◽  
Volume Decrease

AbstractReported are the temperature dependencies of the thermoelectric power and electrical resistivity of mixed rhenium chalcogenides Re6Te15-x,Sex (0 ≤ x ≤ 8) in the range 90–420 K. Influence of the partial chalcogen exchange on thermoelectric properties of these compounds is discussed. The samples are prepared by sintering elemental powders inside evacuated and sealed quartz ampoules at 1150 K for 170 hours. X-ray analysis reveals an orthorhombic lattice for samples with x < 8 and a tetragonal lattice for the Re6Te7Se8. sample. The lattice parameters and the unit cell volume decrease with increasing selenium concentration.The measurements indicate p-type semiconducting behavior for all samples. The presence of the energy gap is observed at higher temperatures (T ≥ 180–220 K) for all x. Data suggest hopping conduction at lower temperatures. Room temperature resistivities increase non-linearly from 6.9 to 20.4 Ω m with the increasing selenium content. Initially, the thermoelectric power a increases with temperature for all samples, with the fastest increase in Re6Se8 Te7 and the slowest in Re6Te15. The temperature at which a reaches maximum decreases with the increasing Se content. Above this temperature, a decreases uniformly as the temperature increases, the slowest increase being for Re6Se8Te7 and the fastest for Re6Te15. Such α(T) dependence is also discussed. The temperature dependence of the power factor, α2/ρ, is presented. Comparison of ρ, α, and the power factor in Re6SexTe15-x with currently used state-of-the-art materials is given.

Effect of Oxygen Content on Thermoelectric Properties of Sintered Bi-Te Based Compounds

2004 ◽  
Vol 449-452 ◽  
pp. 905-908 ◽  
Author(s):  
Dong Choul Cho ◽  
Cheol Ho Lim ◽  
D.M. Lee ◽  
Seung Y. Shin ◽  
Chung Hyo Lee
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Oxygen Content ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Air Atmosphere ◽  
Plasma Sintering ◽  
Spark Plasma ◽  
Effect Of Oxygen

The n-type thermoelectric materials of Bi2Te2.7Se0.3 doped with SbI3 were prepared by spark plasma sintering technique. The powders were ball-milled in an argon and air atmosphere. Then, powders were reduced in H2 atmosphere. Effects of oxygen content on the thermoelectric properties of Bi2Te2.7Se0.3 compounds have been investigated. Seebeck coefficient, electrical resistivity and thermal conductivity of the sintered compound were measured at room temperature. It was found that the effect of atmosphere during the powder production was remarkable and thermoelectric properties of sintered compound were remarkably improved by H2 reduction of starting powder. The obtained maximum figure of merit was 2.4 x 10-3/K.

Thermoelectric Properties of CoSb3 Nanoparticle Films

2011 ◽  
Vol 347-353 ◽  
pp. 3448-3455
Author(s):  
Ya Jun Yang ◽  
Xian Yun Liu ◽  
Xu Dong Wang ◽  
Mei Ping Jiang ◽  
Xian Feng Chen ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Power Factor ◽  
Room Temperature ◽  
Maximum Power ◽  
Vapor Transport ◽  
Growth Technique ◽  
Highly Efficient ◽  
Nanoparticle Films ◽  
Electrical Conductivities ◽  
Maximum Power Factor

Cobblestone-like CoSb3 nanoparticle films have been achieved via a catalyst-free vapor transport growth technique. The thermoelectric properties of the nanoparticle films were measured from room temperature to around 500 oC. The resultant CoSb3 nanoparticle films show high electrical conductivities due to clean particle surfaces. A maximum power factor reaches 1.848×10−4 W/mK2 at 440 oC. The discussed approach is promising for realizing new types of highly efficient thermoelectric semiconductors.

scholarly journals Is LiI a Potential Dopant Candidate to Enhance the Thermoelectric Performance in Sb-Free GeTe Systems? A Prelusive Study

Energies ◽  
2020 ◽  
Vol 13 (3) ◽  
pp. 643 ◽  
Author(s):  
Bhuvanesh Srinivasan ◽  
David Berthebaud ◽  
Takao Mori
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
Short Communication ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Plasma Sintering ◽  
Spark Plasma

As a workable substitute for toxic PbTe-based thermoelectrics, GeTe-based materials are emanating as reliable alternatives. To assess the suitability of LiI as a dopant in thermoelectric GeTe, a prelusive study of thermoelectric properties of GeTe1−xLiIx (x = 0–0.02) alloys processed by Spark Plasma Sintering (SPS) are presented in this short communication. A maximum thermoelectric figure of merit, zT ~ 1.2, was attained at 773 K for 2 mol% LiI-doped GeTe composition, thanks to the combined benefits of a noted reduction in the thermal conductivity and a marginally improved power factor. The scattering of heat carrying phonons due to the presumable formation of Li-induced “pseudo-vacancies” and nano-precipitates contributed to the conspicuous suppression of lattice thermal conductivity, and consequently boosted the zT of the Sb-free (GeTe)0.98(LiI)0.02 sample when compared to that of pristine GeTe and Sb-rich (GeTe)x(LiSbTe2)2 compounds that were reported earlier.

Lanthanide Based Ternary Intermetallics as Advanced Thermoelectric Materials

2006 ◽  
Vol 980 ◽  
Author(s):  
Ken Kurosaki ◽  
Takeyuki Sekimoto ◽  
Kenta Kawano ◽  
Hiroaki Muta ◽  
Shinsuke Yamanaka
Keyword(s):  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
High Temperatures ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Thermoelectric Materials ◽  
Room Temperature ◽  
Single Phase ◽  
Type Structure ◽  
Large Power

AbstractPolycrystalline ingots of the lanthanide based ternary intermetallics: LaNiSb, GdNiSb, ErNiSb and ErPdSb were prepared and characterized. The thermoelectric properties of ErNiSb and ErPdSb were measured at high temperatures. We succeeded in preparing the single phase ingots of ErNiSb and ErPdSb, while the ingots of LaNiSb and GdNiSb contain appreciable quantities of the impurity phases. ErNiSb and ErPdSb crystallize the MgAgAs-type structure (half-Heusler structure). ErNiSb and ErPdSb indicate positive values of the Seebeck coefficient. The values at room temperature are 36 and 240 micro VK-1 for ErNiSb and ErPdSb, respectively. The electrical resistivity of ErNiSb and ErPdSb decreases with temperature, indicating semiconductor-like behavior. ErPdSb exhibits a relatively large power factor 1.5x10-3 Wm-1K-2 at around 700 K, which is approximately two times larger than that of ErNiSb.

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