Alternative simple method to realize p-type BaSi2 thin films for Si heterojunction solar cell applications

MRS Advances ◽  
2018 ◽  
Vol 3 (25) ◽  
pp. 1435-1442 ◽  
Author(s):  
Kazuma Takahashi ◽  
Yoshihiko Nakagawa ◽  
Kosuke O. Hara ◽  
Isao Takahashi ◽  
Yasuyoshi Kurokawa ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Substrate Temperature ◽  
Chemical Vapor ◽  
Hole Density ◽  
Simple Method ◽  
Heterojunction Solar Cells ◽  
P Type ◽  
Post Deposition

Abstract:A novel preparation method of B-doped p-type BaSi2 (p-BaSi2) is proposed to realize heterojunction crystalline Si solar cells with p-BaSi2. The method consists of thermal evaporation of BaSi2 on B-doped amorphous Si (a-Si). In this study, the effect of a-Si interlayers and substrate temperature during BaSi2 evaporation on the electrical characteristics and crystalline quality of the evaporated films were investigated. While no cracks were found in the BaSi2 films formed using hydrogenated a-Si deposited by plasma enhanced chemical vapor deposition (PECVD), the films formed with sputtered a-Si have cracks. In addition, BaSi2 films formed with a 600 °C substrate temperature using PECVD a-Si showed p-type characteristics. After a post-deposition anneal at 800 °C for 5 minutes, the film hole density was measured at 1.3×1019 cm-3 and boron was found to be uniformly distributed throughout the film. These results show that the proposed method using PECVD is promising to obtain p-BaSi2 thin films with high hole density for p-BaSi2/n-type crystalline Si heterojunction solar cells.

DEVELOPMENT OF HIGHLY CONDUCTIVE BORON-DOPED MICROCRYSTALLINE SILICON FILMS FOR APPLICATION IN SOLAR CELLS

2006 ◽  
Vol 20 (03) ◽  
pp. 303-314 ◽  
Author(s):  
QING-SONG LEI ◽  
ZHI-MENG WU ◽  
JIAN-PING XI ◽  
XIN-HUA GENG ◽  
YING ZHAO ◽  
...  
Keyword(s):  
Solar Cells ◽  
Substrate Temperature ◽  
Chemical Vapor ◽  
Dark Conductivity ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Very High Frequency ◽  
Boron Doped ◽  
Deposition Processes ◽  
P Type

We have examined the deposition of highly conductive boron-doped microcrystalline silicon (μc- Si:H ) films for application in solar cells. Depositions were conducted in a very high frequency plasma enhanced chemical vapor deposition (VHF PECVD) chamber. In the deposition processes, various substrate temperatures (TS) were applied. Highly conductive p-type microcrystalline silicon films were obtained at substrate temperature lower than 210°C. The factors that affect the conductivity of the films were investigated. Results suggest that the dark conductivity, which was determined by the Hall mobility and carrier concentration, is influenced by the structure. The properties of the films are strongly dependent on the substrate temperature. With TS increasing, the dark conductivity (σd) increases initially; reach the maximum values at certain TS and then decrease. Also, we applied the boron-doped μc- Si:H as p-layers to the solar cells. An efficiency of about 8.5% for a solar cell with μc- Si:H p-layer was obtained.

Structural Properties of P-Type ZnO Thin Film Post-Treated by NH3 Plasma Method

2014 ◽  
Vol 1004-1005 ◽  
pp. 784-787
Author(s):  
Ping Cao ◽  
Yue Bai
Keyword(s):  
Thin Film ◽  
Treatment Process ◽  
Chemical Vapor ◽  
Hall Effect Measurement ◽  
Hole Density ◽  
Zno Thin Film ◽  
Zno Film ◽  
Simple Method ◽  
Nitrogen Doped ◽  
P Type

In this paper, a simple method is reported to obtain nitrogen-doped p-ZnO film. In this method NH3plasma, generated in a plasma-enhanced chemical vapor deposition system, was employed to treat ZnO thin film. By hall-effect measurement a p type conductivity was observed for the treated film with the hole density of 3.6×1016. XPS result confirmed nitrogen was incorporated into ZnO film during the treatment process to occupy the oxygen positions.

Hot-wire chemical vapor deposition and characterization of p-type nanocrystalline SiC films and their use in Si heterojunction solar cells

2012 ◽  
Vol 520 (6) ◽  
pp. 2110-2114 ◽  
Author(s):  
Hsin-Yuan Mao ◽  
Dong-Sing Wuu ◽  
Bing-Rui Wu ◽  
Shih-Yung Lo ◽  
Hsin-Yu Hsieh ◽  
...  
Keyword(s):  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Heterojunction Solar Cells ◽  
P Type ◽  
Sic Films

Thin Film a-Si/poly-Si Multibandgap Tandem Solar Cells With Both Absorber Layers Deposited by Hot Wire Cvd

2001 ◽  
Vol 664 ◽  
Author(s):  
R.E.I. Schropp ◽  
C.H.M. Van Der Werf ◽  
M.K. Van Veen ◽  
P.A.T.T. Van Veenendaal ◽  
R. Jimenez Zambrano ◽  
...  
Keyword(s):  
Solar Cells ◽  
Substrate Temperature ◽  
Band Gap ◽  
Steel Substrate ◽  
Light Trapping ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Tandem Solar Cells ◽  
Hydrogen Dilution ◽  
P Type

ABSTRACTThe first competitive a-Si/poly-Si multibandgap tandem cells have been made in which the two intrinsic absorber layers are deposited by Hot Wire Chemical Vapor Deposition (HWCVD). These cells consist of two stacked n-i-p type solar cells on a plain stainless steel substrate using plasma deposited n- and p-type doped layers and Hot-Wire deposited intrinsic (i) layers, where the i-layer is either amorphous (band gap 1.8 eV) or polycrystalline (band gap 1.1 eV). In this tandem configuration, all doped layers are microcrystalline and the two intrinsic layers are made by decomposing mixtures of silane and hydrogen at hot filaments in the vicinity of the substrate. For the two layers we used individually optimized parameters, such as gas pressure, hydrogen dilution ratio, substrate temperature, filament temperature, and filament material. The solar cells do not comprise an enhanced back reflector, but feature a natural mechanism for light trapping, due to the texture of the (220) oriented poly-Si absorber layer and the fact that all subsequent layers are deposited conformally. The deposition rate for the throughput limiting step, the poly-Si i-layer, is ≍ 5-6 Å/s. This layer also determines the highest substrate temperature required during the preparation of these tandem cells (500 °C). The initial efficiency obtained for these tandem cells is 8.1 %. The total thickness of the silicon nip/nip structure is only 1.1 µm.

Application of NiOx thin films as p-type emitter layer in heterojunction solar cells

2016 ◽  
Vol 13 (10-12) ◽  
pp. 1006-1010 ◽  
Author(s):  
Francesca Menchini ◽  
Maria Luisa Grilli ◽  
Theodoros Dikonimos ◽  
Alberto Mittiga ◽  
Luca Serenelli ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Emitter Layer ◽  
Heterojunction Solar Cells ◽  
P Type

scholarly journals Chemical Bath Deposition of p-Type Transparent, Highly Conducting (CuS)x:(ZnS)1–x Nanocomposite Thin Films and Fabrication of Si Heterojunction Solar Cells

Nano Letters ◽  
2016 ◽  
Vol 16 (3) ◽  
pp. 1925-1932 ◽  
Author(s):  
Xiaojie Xu ◽  
James Bullock ◽  
Laura T. Schelhas ◽  
Elias Z. Stutz ◽  
Jose J. Fonseca ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Chemical Bath Deposition ◽  
Heterojunction Solar Cells ◽  
Nanocomposite Thin Films ◽  
P Type

Chemical synthesis of p-type nanocrystalline copper selenide thin films for heterojunction solar cells

2006 ◽  
Vol 253 (4) ◽  
pp. 2123-2126 ◽  
Author(s):  
Swapnil B. Ambade ◽  
R.S. Mane ◽  
S.S. Kale ◽  
S.H. Sonawane ◽  
Arif V. Shaikh ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Chemical Synthesis ◽  
Copper Selenide ◽  
Nanocrystalline Copper ◽  
Heterojunction Solar Cells ◽  
P Type

INVESTIGATION OF THE Si:H FILMS DEPOSITED NEAR THE TRANSITION REGION FOR APPLICATION IN SOLAR CELLS

2006 ◽  
Vol 20 (27) ◽  
pp. 1739-1747 ◽  
Author(s):  
QINGSONG LEI ◽  
ZHIMENG WU ◽  
XINHUA GENG ◽  
YING ZHAO ◽  
JIANPING XI
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Transition Region ◽  
Chemical Vapor ◽  
Transition Process ◽  
Very High Frequency ◽  
Working Pressure ◽  
Hydrogenated Silicon ◽  
Silicon Thin Films ◽  
Narrow Region

Hydrogenated silicon thin films (Si:H) have been deposited by using very high-frequency plasma-enhanced chemical vapor deposition (VHF PECVD). The structural, electrical and optical properties of the films were characterized. The transition process and the effect of pressure were studied. Results suggest that a narrow region, in which the transition from microcrystalline to amorphous growth takes place, exists in the regime of silane concentration (SC). This region is influenced by the working pressure (P). At lower pressure, the transition region is shifted to higher SC. Microcrystalline silicon (μ c-Si:H ) thin films deposited near transition region was applied as i-layer to the p-i-n solar cells. An efficiency of about 5.30% was obtained.

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