scholarly journals Modeling of Plasma Expansion during Pulsed Electron Beam Ablation of Graphite

MRS Advances ◽  
2017 ◽  
Vol 2 (16) ◽  
pp. 905-911 ◽  
Author(s):  
Muddassir Ali ◽  
Redhouane Henda

ABSTRACTPulsed electron beam ablation (PEBA) has proven to be a promising and powerful technique for the growth of high quality thin films. Pulsed electron beam film deposition consists of many physical processes including target material heating, target ablation, plasma plume expansion, and film growth on a substrate. Plasma plume expansion into a vacuum or an ambient gas is a fundamental issue in PEBA as the quality of thin films deposited onto the substrate depends on the composition, energy and density of particles ejected from the target. In the present study, gas-dynamics equations are solved to investigate plasma expansion induced by interaction of a nanosecond electron beam pulse (∼100 ns) with a graphite target in an argon atmosphere at reduced pressure. The spatio-temporal profiles of the temperature, pressure, velocity, and density of the plasma plume are numerically simulated for a beam efficiency of 0.6 and accelerating voltage of 15 kV. The preliminary results show a rich variety of behaviors. The model is validated by comparing some of the obtained simulation results with experimental data available in the literature.

2018 ◽  
Vol 15 (7) ◽  
pp. 1700239 ◽  
Author(s):  
Roman Jędrzejewski ◽  
Joanna Piwowarczyk ◽  
Anna Jędrzejewska ◽  
Konrad Kwiatkowski ◽  
Jolanta Baranowska

2015 ◽  
Vol 60 (3) ◽  
pp. 2173-2182 ◽  
Author(s):  
J. Kusiński ◽  
A. Kopia ◽  
Ł. Cieniek ◽  
S. Kąc ◽  
A. Radziszewska

Abstract In this work the pulsed laser deposition (PLD) and the pulsed electron beam deposition (PED) techniques were used for fabrication of Mo-Bi2O3, La1−xSrxCoO3, La1−xCaxCoO3 and Al-Mg thin films. An influence of ablation process basic parameters on the coatings structure and properties was discussed. Two types of laser ablation systems were applied: one equipped with a KrF excimer and second with a Q-switched Nd:YAG. Films were deposited on Si and MgO substrates. Scanning (SEM) and transmission (TEM) electron microscopy, atomic force microscopy (AFM) as well as X-ray diffraction (XRD) were used for structural analysis. Investigations focused on structure and chemical composition showed that smooth and dense thin films with nanocrystalline structure, preserving the composition of the bulk target, could be obtained by the both PLD and PED techniques. Research study showed that by a proper selection of PLD and PED process parameters it was possible to deposit films with significantly decreased amount and size of undesirably nanoparticulates.


Polimery ◽  
2017 ◽  
Vol 62 (10) ◽  
pp. 743-749 ◽  
Author(s):  
Roman Jedrzejewski ◽  
Joanna Piwowarczyk ◽  
Konrad Kwiatkowski ◽  
Jolanta Baranowska

2016 ◽  
Vol 34 (4) ◽  
pp. 703-707 ◽  
Author(s):  
P. Prathiba Jeya Helan ◽  
K. Mohanraj ◽  
G. Sivakumar

AbstractThe present work describes the deposition of semiconducting Cu2SnSe3 thin films by electron beam evaporation method. The structure of the deposited films was characterized by XRD and Raman analysis. X-ray diffraction study revealed that the Cu2SnSe3 thin films had a cubic sphalerite-like structure with crystallite size of 12 nm. Raman spectrum of the thin films confirmed the phase purity. FESEM analysis showed a continuous film with polydispersed grains of a diameter less than 1 цш and the elemental composition was confirmed by EDS spectrum. The UV-Vis spectrum revealed that the sample had high absorption in the visible region and the band gap was found to be 1.15 eV. The I-V graph exhibited the electrical resistivity and conductivity of the film as 2.13 Ω-cm and 0.468 S/cm, respectively. Thus, the electron beam evaporated Cu2SnSe3 thin films showed high purity of structure and good morphological, optical and electrical properties comparable with other methods of thin film deposition.


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