Pulsed-Metal Organic Chemical Vapor Deposition (PMOCVD) for Growth of Single Phase Wurtzite MgxZn1-xO Epitaxial Film with High Mg Content (x=0.51)

MRS Advances ◽  
2016 ◽  
Vol 1 (4) ◽  
pp. 299-304 ◽  
Author(s):  
Fikadu Alema ◽  
Oleg Ledyaev ◽  
Ross Miller ◽  
Valeria Beletsky ◽  
Andrei Osinsky ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Single Phase ◽  
Epitaxial Film ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
High Quality ◽  
Metal Organic ◽  
Mg Content ◽  
Organic Chemical Vapor Deposition ◽  
Single Phase Wurtzite

ABSTRACTPulsed metal organic chemical vapor deposition (PMOCVD) was used to grow high Mg content, high quality, wurtzite MgxZn1-xO (MgZnO) epitaxial film to realize photodetectors and emitters in the solar blind spectral window. MgZnO films with various Mg contents were deposited on c-plane Al2O3 with and without AlN buffer layer. The band gap of the films range from 3.24 eV to 4.49 eV, corresponding to fraction of Mg between x=0.0 to x=0.51, as determined by Rutherford backscattering spectroscopy (RBS). Cathodoluminescence (CL) measurement showed a linear blue shift in the spectral peak position of MgxZn1-xO with an increase in x. No multi-absorption edge or CL band splitting was observed, indicating the phase purity of the films and was confirmed by XRD analysis. The surface quality of the films has improved with the increase in Mg content. To the best of our knowledge, the current result shows the highest Mg content (x=0.51), high quality, single phase wurtzite MgZnO epitaxial film ever grown by MOCVD. This is realized due to the non-equilibrium behavior of PMOCVD in which radicals that are formed during the growth process will have insufficient time to reach equilibrium.

Nucleation layer design for growth of a high-quality AlN epitaxial film on a Si(111) substrate

CrystEngComm ◽  
2018 ◽  
Vol 20 (11) ◽  
pp. 1483-1490 ◽  
Author(s):  
Yuan Li ◽  
Wenliang Wang ◽  
Xiaochan Li ◽  
Liegen Huang ◽  
Yulin Zheng ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Epitaxial Film ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
High Quality ◽  
Nucleation Layer ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

A high-quality AlN epitaxial film has been grown on a Si(111) substrate by metal–organic chemical vapor deposition through designing the AlN nucleation layer.

Crack-free high quality 2 μm-thick Al0.5Ga0.5N grown on a Si substrate with a superlattice transition layer

CrystEngComm ◽  
2020 ◽  
Vol 22 (7) ◽  
pp. 1160-1165 ◽  
Author(s):  
Yingnan Huang ◽  
Jianxun Liu ◽  
Xiujian Sun ◽  
Xiaoning Zhan ◽  
Qian Sun ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Transition Layer ◽  
Smooth Surface ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Si Substrate ◽  
High Quality ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

We reported the successful growth of a crack-free high-quality 2 μm-thick Al0.5Ga0.5N film with a smooth surface grown on planar Si by metal–organic chemical vapor deposition.

Epitaxial Growth of “Strain-Free” Indium Oxide Films on (111) Yttria-Stabilized Zirconia by Metal-Organic Chemical Vapor Deposition

2020 ◽  
Vol 1014 ◽  
pp. 22-26
Author(s):  
Yi Zhuo ◽  
Zi Min Chen ◽  
Sheng Dong Zhang
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thick Layer ◽  
Chemical Vapor ◽  
Yttria Stabilized Zirconia ◽  
Organic Chemical ◽  
Stabilized Zirconia ◽  
High Quality ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

In this work, In2O3 thin films were grown on (111) yttria-stabilized zirconia (YSZ) by metal-organic chemical vapor deposition (MOCVD) at different temperature. It is found that samples grown at low temperature showed lower residual stress but higher mosaicity while high growth temperatures could also cause deterioration in crystal quality due to increasing lattice mismatch. To obtain high quality In2O3 film with low residual strain, a 30-nm thick layer grown at 530 °C was introduced as buffer layer, considering both stress relaxation and crystalline mosaicity. By using two-step growth method, a 400 nm-thick, high quality, near-strain-free In2O3 thin film with the full width at half maximum (FWHM) values of (222) diffraction peaks being as narrow as 648 arcsec was successfully obtained.

TEM Study of MOCVD Grown InSb/GaAs Heterostructures with and without TMIn Predeposited Layers

1994 ◽  
Vol 340 ◽  
Author(s):  
L. H. Kuo ◽  
Susan Z. Hua ◽  
L. Salamanca-Riba ◽  
D. L. Partin ◽  
L. Green ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Threading Dislocations ◽  
High Quality ◽  
Gaas Substrates ◽  
Transmission Electron ◽  
Metal Organic ◽  
Step Growth ◽  
Organic Chemical Vapor Deposition

ABSTRACTHigh quality InSb epilayers were grown on GaAs substrates by metal organic chemical vapor deposition using a two-step growth procedure involving trimethal indium (TMIn) predeposition. From transmission electron microscopy studies, we found that an interdiffusion layer of thickness of 10 Å forms at the interface when the substrate is exposed to TMIn for approximately 6 secs prior to the growth of the InSb filns. Hall mobilities up to σ 52,000 cm2/V-s were obtained at 300 K on a 2.1-μm-thick InSb heteroepitaxial film. In contrast, samples without TMIn predeposition showed polycrystallinity of the InSb films grown on single crystalline GaAs substrates. The effect. of TMNIn predeposition is to minimize the misorientation of the grains, suppress the polycrystallinity, decrease the density of threading dislocations, and increase the electron mobilities in the films. However, we found that too much TMIn predeposition gives rise t.o an intermixing layer at the InSb/GaAs interface which deteriorates the film quality. Details of the effect of the TMIn predeposition on the microstructure of InSb/GaAs with different predeposition times (zero, 6, and 12 secs) are discussed.

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