Impact of Layer Number on Flexible High-Voltage Nanostructured Solar Cells

MRS Advances ◽  
2016 ◽  
Vol 1 (14) ◽  
pp. 891-899
Author(s):  
Roger E. Welser ◽  
Ashok K. Sood ◽  
S. Rao Tatavarti ◽  
Andree Wibowo ◽  
David M. Wilt
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Short Circuit ◽  
Multiple Quantum Well ◽  
Open Circuit ◽  
Multiple Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Layer Number ◽  
The Impact

ABSTRACTNanostructured quantum well and quantum dot solar cells are being widely investigated as a means of extending infrared absorption and enhancing photovoltaic device performance. In this work, we describe the impact of nanostructured layer number on the performance of flexible, highvoltage InGaAs/GaAs quantum well solar cells. Multiple quantum well structures are observed to have a higher short circuit current but a lower open circuit voltage than similar single quantum well structures. Analysis of the underlying dark diode characteristics indicate that these highvoltage structures are limited by radiative recombination at high bias levels. The results of this study suggest that future development efforts should focus on maximizing the current generating capability of a limited number of nanostructured layers and minimizing recombination within the nanostructured absorber.

InGaN/GaN Multiple Quantum Well Solar Cells with Good Open-Circuit Voltage and Concentrator Action

2012 ◽  
Vol 51 ◽  
pp. 092301 ◽  
Author(s):  
Xue-Fei Li ◽  
Xin-He Zheng ◽  
Dong-Yan Zhang ◽  
Yuan-Yuan Wu ◽  
Xiao-Ming Shen ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Open Circuit Voltage ◽  
Multiple Quantum Well ◽  
Open Circuit ◽  
Multiple Quantum

InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage

2011 ◽  
Vol 20 (2) ◽  
pp. 028402 ◽  
Author(s):  
Xiao-Bin Zhang ◽  
Xiao-Liang Wang ◽  
Hong-Ling Xiao ◽  
Cui-Bai Yang ◽  
Qi-Feng Hou ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Open Circuit Voltage ◽  
Multiple Quantum Well ◽  
Open Circuit ◽  
Multiple Quantum

GaAs–AlGaAs multiple-quantum-well lasers for monolithic integration with optical modulators

1991 ◽  
Vol 69 (3-4) ◽  
pp. 491-496 ◽  
Author(s):  
F. Chatenoud ◽  
K. M. Dzurko ◽  
M. Dion ◽  
D. Moss ◽  
R. Barber ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Cavity Length ◽  
Multiple Quantum Well ◽  
Monolithic Integration ◽  
Quantum Well Lasers ◽  
Multiple Quantum ◽  
Optical Modulators ◽  
Single Quantum Well ◽  
Quantum Well Structures

Calculations of multiple-quantum-well laser threshold current show that a common minimum current value exists for each number of wells, at an appropriate cavity length. This optimum cavity length decreases rapidly with increasing number of wells, for instance from about 300 to 110 μm for one to three wells. Granded-index separate-confinement heterostructure (GRINSCH) lasers with 1–10 quantum wells, grown by molecular beam epitaxy, show consistently low threshold currents that agree well with theoretical predictions. Lasing is achieved at 160 A cm−2 and 4.6 mA for broad-area and ridge waveguide single-quantum-well devices, respectively. The field-dependent electroabsorption of these devices when operating as wave-guide modulators indicates good modulation properties for one and three quantum-well structures, with on:off ratios above 55 at lasing wavelength. The behavior becomes more complex with increasing number of wells. This systematic study of discrete multiple-quantum-well lasers and modulators demonstrates that GRINSCH structures with 1–3 wells are the most suitable for monolithic integration. Design rules for the laser cavity are also presented for numbers of wells ranging from 1 to 10.

InGaN/GaN Multiple Quantum Well Solar Cells with Good Open-Circuit Voltage and Concentrator Action

2012 ◽  
Vol 51 (9R) ◽  
pp. 092301 ◽  
Author(s):  
Xue-Fei Li ◽  
Xin-He Zheng ◽  
Dong-Yan Zhang ◽  
Yuan-Yuan Wu ◽  
Xiao-Ming Shen ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Open Circuit Voltage ◽  
Multiple Quantum Well ◽  
Open Circuit ◽  
Multiple Quantum

RESONANT TUNNELING STUDIES OF VARIABLY SPACED MULTIPLE QUANTUM WELL STRUCTURES IN THE AlGaAs SYSTEM

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-457-C5-461
Author(s):  
C. J. SUMMERS ◽  
K. F. BRENNAN ◽  
A. TORABI ◽  
H. M. HARRIS ◽  
J. COMAS
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures
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