Heterojunction solar cells on flexible silicon wafers

MRS Advances ◽  
2016 ◽  
Vol 1 (15) ◽  
pp. 997-1002 ◽  
Author(s):  
André Augusto ◽  
Pradeep Balaji ◽  
Harsh Jain ◽  
Stanislau Y. Herasimenka ◽  
Stuart G. Bowden
Keyword(s):  
Solar Cells ◽  
Large Scale ◽  
Surface Passivation ◽  
Short Circuit ◽  
Open Circuit ◽  
Additional Stress ◽  
Scale Production ◽  
Heterojunction Solar Cells ◽  
Cell Efficiency ◽  
Low Efficiency

ABSTRACTCurrent large-scale production of flexible solar devices delivers cells with low efficiency. In this paper we present an alternative path to organic or inorganic thin films. Our cells combine the remarkable surface passivation properties of the silicon heterojunction solar cells design, and the quality of n-type Cz wafers. The cells were manufactured on 50-70 µm-thick wafers. The cells have and efficiency of 17.8-19.2%, open-circuit voltages of 735-742 mV, short-circuit currents of 34.5-35.5 mA/cm2, and fill-factors of 72-75%. The cells are not as flexible as bare wafers. Thin cells are particular sensitive to the additional stress introduced by the busbars and the soldered ribbons. For radiuses of curvature over 8cm the cells efficiency remains the same, for radius equal to 6cm the cell efficiency drops less than 2%, and for radius equal to 4cm the drop is less than 3%. The broken fingers due to smaller bend radius lead to higher series resistance and subsequently lower field-factors.

Influence of OVPD parameters on the performance of organic solar cells utilizing pentacene/PTCDI absorption layers

2012 ◽  
Vol 1390 ◽  
Author(s):  
S. Axmann ◽  
M. Brast ◽  
N. Wilck ◽  
H. Windgassen ◽  
M. Heuken ◽  
...  
Keyword(s):  
Solar Cells ◽  
Substrate Temperature ◽  
Organic Solar Cells ◽  
Energy Demand ◽  
Large Scale ◽  
Short Circuit ◽  
Electrical Characterization ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Scale Production

ABSTRACTAs global energy demand is steadily growing, renewable energy generation by solar cells is becoming increasingly important. The use of mono- and polycrystalline silicon solar cells, which nowadays dominate the market, is limited by wafer size, rigidness of substrates and the requirement of large energy amounts for manufacturing. Organic solar cells (OSC) have the potential to overcome these limitations; especially organic vapor phase deposition (OVPD) technology offers the possibility of reproducible, large-scale production at low temperatures and on flexible substrates.We report on planar heterojunction OSC utilizing an active layer of pentacene/N, N’- ditridecylperylene-3, 4, 9, 10-tetracarboxylic diimide (PTCDI) fabricated by an Aixtron Gen-1 OVPD tool. The influence of substrate temperature was studied using atomic force microscopy (AFM) on single layers and bilayers. In addition electrical characterization with and without illumination of fully processed solar cells which utilize different cathode layers was carried out.AFM images indicate that crystallization of pentacene layers can be widely influenced by substrate temperature, a PTCDI-C13H27 layer atop of these covers the crystallites. Open-circuit voltage was found to be 0.47 V and short-circuit current densities beyond 0.8 mA/cm2 were measured under a spectrum close to AM 1.5 with 100 mW/cm2. Fill factors were determined to be as high as 44 %.

Lock-in Thermography-Based Local Efficiency Analysis of Solar Cells

2012 ◽  
Author(s):  
Otwin Breitenstein
Keyword(s):  
Solar Cells ◽  
Short Circuit ◽  
Efficiency Analysis ◽  
Open Circuit ◽  
Local Defect ◽  
Whole Cell ◽  
Local Efficiency ◽  
Cell Efficiency ◽  
Lock In ◽  
Efficiency Data

Abstract The electronic properties of solar cells, particularly multicrystalline silicon-based ones, are distributed spatially inhomogeneous, where regions of poor quality may degrade the performance of the whole cell. These inhomogeneities mostly affect the dark current-voltage (I-V) characteristic, which decisively affects the efficiency. Since the grid distributes the local voltage homogeneously across the cell and leads to lateral balancing currents, local light beam-induced current methods alone cannot be used to image local cell efficiency parameters. Lock-in thermography (LIT) is the method of choice for imaging inhomogeneities of the dark I-V characteristic. This contribution introduces a novel method for evaluating a number of LIT images taken at different applied biases. By pixel-wise fitting the data to a two diode model and taking into account local series resistance and short circuit current density data, realistically simulated images of the other cell efficiency parameters (open circuit voltage, fill factor, and efficiency) are obtained. Moreover, simulated local and global dark and illuminated I-V characteristics are obtained, also for various illumination intensities. These local efficiency data are expectation values, which would hold if a homogeneous solar cell had the properties of the selected region of the inhomogeneous cell. Alternatively, also local efficiency data holding for the cell working at its own maximum power point may be generated. The amount of degradation of different cell efficiency parameters in some local defect positions is an indication how dangerous these defects are for degrading this parameter of the whole cell. The method allows to virtually 'cut out' certain defects for checking their influence on the global characteristics. Thus, by applying this method, a detailed local efficiency analysis of locally inhomogeneous solar cells is possible. It can be reliably predicted how a cell would improve if certain defects could be avoided. This method is implemented in a software code, which is available.

scholarly journals CdTe-Based Thin Film Solar Cells: Past, Present and Future

Energies ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1684
Author(s):  
Alessandro Romeo ◽  
Elisa Artegiani
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Early Years ◽  
Solar Cell Efficiency ◽  
Cell Efficiency

CdTe is a very robust and chemically stable material and for this reason its related solar cell thin film photovoltaic technology is now the only thin film technology in the first 10 top producers in the world. CdTe has an optimum band gap for the Schockley-Queisser limit and could deliver very high efficiencies as single junction device of more than 32%, with an open circuit voltage of 1 V and a short circuit current density exceeding 30 mA/cm2. CdTe solar cells were introduced at the beginning of the 70s and they have been studied and implemented particularly in the last 30 years. The strong improvement in efficiency in the last 5 years was obtained by a new redesign of the CdTe solar cell device reaching a single solar cell efficiency of 22.1% and a module efficiency of 19%. In this paper we describe the fabrication process following the history of the solar cell as it was developed in the early years up to the latest development and changes. Moreover the paper also presents future possible alternative absorbers and discusses the only apparently controversial environmental impacts of this fantastic technology.

Simulation of InAIN/Si Single-Heterojunction Solar Cells Using wxAMPS

2014 ◽  
Vol 665 ◽  
pp. 111-114 ◽  
Author(s):  
Ying Huang ◽  
Xiao Ming Shen ◽  
Xiao Feng Wei
Keyword(s):  
Solar Cells ◽  
Fill Factor ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Indium Content ◽  
Open Circuit ◽  
Heterojunction Solar Cells ◽  
Si Solar Cells

In this paper, InAlN/Si single-heterojunction solar cells have been theoretically simulated based on wxAMPS software. The photovoltaic parameters, such as open circuit voltage, short circuit current, fill factor and conversion efficiency were investigated with changing the indium content and thickness of n-InAlN layer. Simulation results show that the optimum efficiency of InAlN/Si solar cells is 23.1% under AM 1.5G spectral illuminations, with the indium content and thickness of n-InAlN layer are 0.65 and 600nm, respectively. The simulation would contribute to design and fabricate high efficiency InAlN/Si solar cells in experiment.

Performance of Air-Stable Cs2SnI6 Perovskite as Electron Transport Layer in Inverted Bulk Heterojunction Solar Cell

2020 ◽  
Vol 860 ◽  
pp. 28-33
Author(s):  
Rany Khaeroni ◽  
Herman ◽  
Priastuti Wulandari
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Electron Transport ◽  
Chemical Process ◽  
Large Scale ◽  
Bulk Heterojunction ◽  
Short Circuit ◽  
Open Circuit ◽  
Transport Layer ◽  
Electron Transport Layer

In recent years, perovskite material has been extensively studied due to its unique physical properties and promising application in the third generation of solar cells. In particular, Sn-based perovskite has been considered to replace Pb-based perovskite because of the toxic effects and it can lead to other serious problems related to the environment. Cs2SnI6 perovskite has been known to be synthesized in a simple chemical process and it can be produced on a large scale. Moreover, this material is also oxygen and moisture stable due to the high oxidation state of tin. In this study, we synthesize air-stable Cs2SnI6 perovskite by the use of the wet chemical process at room temperature. Next, we attempt to fabricate the inverted bulk heterojunction solar cells incorporated Cs2SnI6 as electron transport layer in the configuration of ITO/ZnO/Cs2SnI6/P3HT:PCBM/PEDOT:PSS/Ag to improve device performance. The Cs2SnI6 perovskite shows an Fm-3m space group with a cubic lattice parameter of 11.62Å confirmed by X-Ray Diffraction (XRD) measurement, while UV-Vis measurement indicates this type of perovskite has direct band gap ~3.1 eV. The fabricated solar cell device reveals the enhancement in current density at short circuit condition (Jsc) from 64.69 mA/cm2 to 77.02 mA/cm2 with the addition of 2.25 mg/ml Cs2SnI6 along with the enhancement of power conversion efficiency (PCE) from 7.05% to 9.75% as characterized by J-V measurement. In our case, the voltage at open circuit condition (Voc) of the device does not perform significant improvement. Besides, it is found that the solar cell devices are quite stable even after exposure in the air for six weeks after fabrication, as indicated by PCE performance.

scholarly journals Effect of the Phosphorus Gettering on Si Heterojunction Solar Cells

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Hyomin Park ◽  
Sung Ju Tark ◽  
Chan Seok Kim ◽  
Sungeun Park ◽  
Young Do Kim ◽  
...  
Keyword(s):  
Solar Cells ◽  
Current Density ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Solar Simulator ◽  
Heterojunction Solar Cells ◽  
Crystalline Silicon Solar Cells

To improve the efficiency of crystalline silicon solar cells, should be collected the excess carrier as much as possible. Therefore, minimizing the recombination both at the bulk and surface regions is important. Impurities make recombination sites and they are the major reason for recombination. Phosphorus (P) gettering was introduced to reduce metal impurities in the bulk region of Si wafers and then to improve the efficiency of Si heterojunction solar cells fabricated on the wafers. Resistivity of wafers was measured by a four-point probe method. Fill factor of solar cells was measured by a solar simulator. Saturation current and ideality factor were calculated from a dark current density-voltage graph. External quantum efficiency was analyzed to assess the effect of P gettering on the performance of solar cells. Minority bulk lifetime measured by microwave photoconductance decay increases from 368.3 to 660.8 μs. Open-circuit voltage and short-circuit current density increase from 577 to 598 mV and 27.8 to 29.8 mA/cm2, respectively. The efficiency of solar cells increases from 11.9 to 13.4%. P gettering will be feasible to improve the efficiency of Si heterojunction solar cells fabricated on P-doped Si wafers.

Simulation of Symmetrically Doped Silicon Nanowire Solar Cells

2011 ◽  
Vol 1322 ◽  
Author(s):  
Felix Voigt ◽  
Thomas Stelzner ◽  
Silke H. Christiansen
Keyword(s):  
Solar Cells ◽  
Short Circuit ◽  
Silicon Nanowire ◽  
Short Circuit Current ◽  
Cylindrical Symmetry ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Back Surface ◽  
Cell Efficiency ◽  
P Type

ABSTRACTSilicon nanowire solar cells were simulated using the Silvaco TCAD software kit. For optimization of speed the simulations were performed in cylinder coordinates with cylindrical symmetry. Symmetric doping was assumed with a dopant density of 1018 cm-3 in the p-type core and inside the n-type shell. In the implementation a cathode contact was wrapped around the semiconductor nanorod and an anode was assumed at the bottom of the rod. Optimization of cell efficiency was performed with regard to the rod radius and the rod length. In both optimization processes clear maxima in efficiency were visible, resulting in an optimal radius of 66 nm with the pn junction at 43.5 nm and an optimal rod length of about 48 μm. The maximum of efficiency with respect to the rod radius is due to a decrease of short-circuit current density (Jsc) and an increase of open-circuit voltage (Uoc) with radius, while the maximum with respect to the rod length is explained by the combination of an increase of Jsc and a decrease of Uoc. Fill factors stay rather constant at values between 0.6 and 0.8. Further, the influence of a back surface field (BSF) layer was surveyed in simulations. Positioning the BSF next to the cathode contact considerably improved cell efficiency. In addition, simulations with a cathode contact on top of the nanowire structure were undertaken. No severe deterioration of cell performance with increasing radius was observed so far in this configuration. Hence, nanorods with much larger radii can be used for solar cells using this contact scheme. In comparison to simulations with wrapped cathode contacts, Jsc and Uoc and therefore efficiency is considerably improved.

Implementation of Highly Resistive Emitter Solar Cells in a Production Environment using an Inline Doping System

2011 ◽  
Vol 178-179 ◽  
pp. 441-445
Author(s):  
Wolfgang Wille ◽  
Ralph Rothemund ◽  
Gerald Meinhardt ◽  
Wolfgang Jantsch
Keyword(s):  
Solar Cells ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Surface Concentration ◽  
Open Circuit ◽  
Doping Profile ◽  
Process Conditions ◽  
Production Environment ◽  
Cell Efficiency ◽  
Set Up

Instead of selective emitter technology we investigate an alternative way to optimize contact formation and increased blue responsivity of highly resistive emitter solar cells using screen print technology for the deposition of the frontside metallization grid. We show with the aid of an inline doping/diffusion set-up at Blue Chip Energy that tuning the emitter doping profile is an alternative way to reduce the effect of Auger recombination in the spectral range from 300 nm to 600 nm. By properly choosing the process conditions we were able to minimize the detrimental effect of the low surface concentration of the dopant on the contact resistance. Due to improved blue light responsivity a significant gain in short circuit current Jsc was achieved. This and a reduced reverse saturation current I00E yielded a higher open circuit voltage VOC and an increase of cell efficiency from 17.6 %-avg to more than 17.9 %-avg.

Characteristics of Chemically Deposited Thin Film Solar Cells using SnS and Sb2S3 Absorbers

2006 ◽  
Vol 974 ◽  
Author(s):  
M. T. Santhamma Nair ◽  
David Avellaneda ◽  
Sarah Messina ◽  
P. K. Nair
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Large Scale ◽  
Optical Band Gap ◽  
Short Circuit ◽  
Chemical Deposition ◽  
Open Circuit ◽  
Published Data ◽  
Scale Production ◽  
Silver Paint

ABSTRACTWe use SnS and Sb2S3 thin films of about 500 nm in thickness deposited on glass substrates by chemical deposition to develop solar cell structures: glass-SnO2:F/CdS/SnS/CuS/silver paint and SnO2:F/CdS/Sb2(S/Se)3/PbS/silver paint. Here, SnS and Sb2S3, and PbS are absorber materials suitable for large scale production, considering their abundance at 0.2 ppm (Sb) and 2 ppm (Sn) and 8ppm (pb) in the earth's crust according to published data. SnS films deposited through distinct reaction routes have optical band gap of 1.1 eV or 1.7 eV. In SnO2:F/CdS/SnS(1.1eV)/SnS(1.7 eV)/CuS/silver paint, open circuit voltage (Voc) of ≈ 400 mV, and short circuit current (Jsc)of 7 mA/cm2 are obtained with a cell efficiency of 1%. Sb2S3 thin films have optical band gap 1.7 eV, but could be reduced through reaction in Se-vapor, upon which solid solutions of Sb2(S/Se)3 are formed. In SnO2:F/CdS/Sb2(S/Se)3/PbS/silver paint, Voc of ≈ 640 mV, Jsc of 7 mA/cm2 and conversion efficiency of 1.5% are obtained.

Recent developments in sensitized mesoporous heterojunction solar cells

2001 ◽  
Vol 708 ◽  
Author(s):  
Jessica Krüger ◽  
Udo Bach ◽  
Robert Plass ◽  
Marco Piccerelli ◽  
Le Cevey ◽  
...  
Keyword(s):  
Solar Cells ◽  
Short Circuit ◽  
Dye Sensitized Solar Cells ◽  
Open Circuit ◽  
Heterojunction Solar Cells ◽  
Dye Sensitized ◽  
Dyeing Process ◽  
Recent Developments ◽  
Sensitized Solar Cells ◽  
Open Circuit Voltages

ABSTRACTThe performance of solid-state dye-sensitized solar cells based on spiro-MeOTAD (2,2'7,7'-tetrakis(N,N-di-p-methoxyphenyl-amine)-9,9'-spirobifluorene) was considerably improved by decreasing charge recombination across the interface of the heterojunction. This was achieved by blending the hole conductor matrix with a combination of 4-tert-butylpyridine (tBP) and Li[CF3SO2]2N. Open circuit voltages (Uoc) over 900mV and short circuit currents (Isc) up to 5.1 mA were obtained, yielding an overall efficiency of 2.56 % at AM1.5 illumination. Further improvement of the device performance was observed when conducting stripes of silver were deposited onto the devices as charge collector. The beneficial effect however could be assigned to the contamination of the dye-sensitized TiO2 film with silver during the dyeing process.

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