Scalable Non-injection Synthesis of Cd-Free Copper Indium Sulfide/Zinc Sulfide Quantum Dots for Third-Gen Photovoltaic Application

MRS Advances ◽  
2016 ◽  
Vol 1 (30) ◽  
pp. 2193-2198 ◽  
Author(s):  
Yaxin Zheng ◽  
Bahareh Sadeghimakki ◽  
Navid. M. S. Jahed ◽  
Siva Sivoththaman
Keyword(s):  
Quantum Dots ◽  
Stokes Shift ◽  
Emission Spectra ◽  
Indium Sulfide ◽  
Time Resolved ◽  
Photovoltaic Application ◽  
Transmission Electron ◽  
Copper Indium ◽  
Potential Applicability ◽  
Cadmium And Lead

ABSTRACTCopper Indium Sulfide (CIS)-based quantum dots (QDs) are considered as a safer alternative compared to carcinogenic cadmium- and lead-based QDs. Here, we present a facile, high throughput, and non-injection method of synthesizing CIS-based QDs. The structure, shape, size, and crystalline structure of the synthesized QDs were studied using high resolution transmission electron microscopy (HRTEM). The effects of temperature and compositional dependency on the structure and optical properties of the resulting QDs were investigated using elemental, absorption, photoluminescence (PL), and time-resolved spectroscopic analyses. We observed that a gradient increase of temperature during the core growth, as well as addition of excess indium (In) and zinc (Zn) precursors during core and core/shell synthesis, at low growth temperatures, resulted in QDs with improved PL and lifetime. The large Stokes shift, broad emission spectra, and long-lived emission of the synthesized QDs reveal their potential applicability to third generation photovoltaic and optoelectronic devices.

Studies on Optical Properties of CdS/ZnO Quantum Dots Prepared by Sol-Gel Method

2011 ◽  
Vol 364 ◽  
pp. 129-133 ◽  
Author(s):  
Liyana Mohd Lawi Ruhana ◽  
Taqiyuddin Mawardi Ayob Muhammad ◽  
Radiman Shahidan ◽  
Irman Abdul Rahman ◽  
Bohari M. Yamin
Keyword(s):  
Quantum Dots ◽  
Sol Gel ◽  
Emission Spectra ◽  
Blue Shift ◽  
Mixture Ratio ◽  
Gel Method ◽  
Sol Gel Method ◽  
Transmission Electron ◽  
Zno Quantum Dots ◽  
Zno Qds

CdS/ZnO quantum dots (QDs) were prepared at a temperature of 293 K by the sol-gel method with Triethanolamine (TEA) as a capping agent. The effect of CdS/ZnO mixture ratio of 1:9, 1:1 and 9:1 on the optical absorption and fluorescence spectra were investigated by UV-Vis and Fluorescence spectroscopy. By increasing ZnO composition, a blue-shift of absorption edge and emission spectra were observed. The band gap for 1:9, 1:1 and 9:1 were found to be 4.13, 3.93 and 3.11 eV, respectively. The morphology of the CdS/ZnO QDs for each mixing ratio was obtained by transmission electron microscope (TEM). The size of the QDs was found to be in the range of 5-10 nm with some agglomerated particles.

The effects of post-processing on the surface and the optical properties of copper indium sulfide quantum dots

2015 ◽  
Vol 445 ◽  
pp. 337-347 ◽  
Author(s):  
Tugce Akdas ◽  
Monica Distaso ◽  
Susanne Kuhri ◽  
Benjamin Winter ◽  
Balaji Birajdar ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Indium Sulfide ◽  
Post Processing ◽  
Copper Indium

Quantitative Structure Analysis of Nano-sized Materials by Transmission Electron Microscopy

2009 ◽  
Vol 1184 ◽  
Author(s):  
Wolfgang Neumann ◽  
Holm Kirmse ◽  
Ines Häeusler ◽  
Changlin Zheng ◽  
Anna Mogilatenko
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Quantum Dots ◽  
Chemical Composition ◽  
Soft Magnetic Materials ◽  
Electron Holography ◽  
Quantitative Structure ◽  
Soft Magnetic ◽  
Transmission Electron ◽  
Potential Applicability

AbstractNanostructured materials from almost all classes of materials are of great interest because the reduced dimensionality may drastically change the physical properties. In general, these properties are a function of size, shape, arrangement and chemical composition of the nano-sized materials. Transmission electron microscopy (TEM) is a powerful tool to get a detailed insight into the material characteristics. To correlate microstructure as well as microchemistry and materials properties the various TEM techniques for imaging, diffraction and spectroscopy have to be combined. The potential applicability of quantitative TEM will be demonstrated for different nano-sized objects, particularly for semiconductor islands, nanowires, quantum dots and for soft magnetic materials. The classical diffraction contrast method of conventional TEM is applied to analyse the size, shape and arrangement of nano-sized structures, where a quantitative analysis often requires image simulations of diffraction contrast for theoretical structure models. An alternative and powerful method is the three-dimensional reconstruction of the shape from two-dimensional phase mapping by means of electron holography. This reqires the exact calculation of the mean inner potential of the specimen. Quantitative high-resolution transmission electron microscopy (qHRTEM) has to be applied to analyse structure and chemical composition on an atomic scale of magnitude. Particularly the application of aberration-corrected HRTEM offers new possibilities for quantitative structure analysis due to a contrast transfer by means of negative spherical aberration imaging (NCSI) and the resulting strong suppression of image delocalisation effects. An example for quantitative composition analysis will be demonstrated for ternary semiconductor quantum structures by means of a combined analysis of dark-field imaging and qHRTEM. The results will be compared with analytical TEM data (energy-dispersive X-ray spectroscopy (EDXS), electron energy-loss spectroscopy (EELS), and energy-filtered TEM (EFTEM)). The retrieval of chemical information with atomic resolution will be illustrated for III-V semiconductor nanostructures using STEM (scanning TEM) Z-contrast imaging. The correlation of structure and magnetic properties of soft magnetic materials will be demonstrated by combined application of Lorentz microscopy and electron holography. The potential applicability of the different quantitative TEM methods will be shown for following systems:(i) (Si,Ge) islands(ii) ZnTe and (Zn,Mn)Te nanowires(iii) Ga(As,Sb) quantum dots (QDs) on GaAs substrate(iv) nc softmagnetic FeCo alloysThe possibilities and limitations of the various methods applied will be critically evaluated.

scholarly journals Optical Studies of Organically Functionalized Mn doped ZnS Quantum Dots

2021 ◽  
Vol 33 (12) ◽  
pp. 2972-2976
Author(s):  
Anju Bala ◽  
Rajeev Sehrawat ◽  
Renu Bala ◽  
Ashutosh Dixit
Keyword(s):  
Quantum Dots ◽  
Quantum Confinement Effect ◽  
Emission Spectra ◽  
Blue Shift ◽  
Capping Agent ◽  
X Ray Diffraction ◽  
Tem Analysis ◽  
Transmission Electron ◽  
Uv Visible ◽  
Mn Doped

Organically functionalized manganese doped zinc sulfide (ZnS/Mn) quantum dots were prepared by simple chemical method with polypyrrole (PPy) used as a capping agent. Prepared quantum dots were characterized with Fourier transform infrared spectroscopy (FTIR), high resolution transmission electron microscopy (HR-TEM), X-ray diffraction microscope (XRD), UV-visible spectroscopy and photoluminescence spectroscopy. Crystalline size of PPy capped ZnS/Mn quantum dots for various concentrations of PPy were approximate 2 nm as analyzed by XRD and TEM analysis. The absorption spectra revealed the occurrence of a blue shift in the peak of absorption and an increase in the band gap value due to the quantum confinement effect. FTIR spectroscopy confirmed that shifting of broad peak at 2335.8 cm–1 was due to S-H stretching vibrations, which confirmed interaction of hydrogen and sulphur in ZnS/Mn/PPy nanocomposites. Uncapped ZnS/Mn and PPy capped ZnS/Mn quantum dots reveal the effective photoluminescence emission spectra in the range of 300-700 nm. With increase the value of capping agent in ZnS/Mn quantum dots, photoluminescence spectra going to red shifting. The photoluminescence properties of the organically functionalized ZnS nanoparticles are favourable for the application in optoelectronic devices.

Luminescent Properties of La3PO7:Eu3+ Nanoparticles

2008 ◽  
Vol 8 (3) ◽  
pp. 1410-1413 ◽  
Author(s):  
Shaozhe Lü ◽  
Jishen Zhang
Keyword(s):  
Charge Transfer Band ◽  
Emission Spectra ◽  
Local Environment ◽  
Luminescent Properties ◽  
X Ray Diffraction ◽  
Excitation Spectra ◽  
Time Resolved ◽  
Transmission Electron ◽  
Light Excitation ◽  
Average Size

La3PO7:Eu3+ samples were prepared by combustion and annealing and characterized by X-ray diffraction and transmission electron microscopy. It was found that the average size of the particles is about 80 nm. The red emission from the 5D0 → 7F2 transition of the Eu3+ ions under ultraviolet light excitation is much stronger than the orange emission from the 5D0 → 7F1 transition. The emission spectra, charge transfer band, laser selective excitation spectra, and time-resolved spectra indicate that symmetry of the local environment of Eu3+ lacks an inversion center and Eu3+ ions occupy at least two types of sites in the La3PO7 crystal. The superior color chromaticity compared to other phosphates and borates doped with Eu3+ means La3PO7:Eu3+ may have potential as a luminescent material.

The Structural and Optical Properties of Self-assembled InGaN/GaN Quantum Dots Grown by Molecular Beam Epitaxy

2006 ◽  
Vol 955 ◽  
Author(s):  
Tim Michael Smeeton ◽  
Mathieu Sénès ◽  
Katherine L Smith ◽  
Stewart E Hooper ◽  
Jon Heffernan
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emission ◽  
Structural And Optical Properties ◽  
Discrete Energy ◽  
Time Resolved ◽  
Transmission Electron ◽  
Z Contrast

ABSTRACTThe structural and optical properties of InGaN quantum dots grown by plasma-assisted molecular beam epitaxy (MBE) have been characterised using atomic force microscopy, high-resolution transmission electron microscopy (TEM), Z-contrast scanning TEM, micro-photoluminescence (PL), temperature dependent PL and time-resolved PL. The uncapped InGaN nano-islands have densities of ∼1.5 × 1011 cm−2, heights of (1.7 ± 1.0) nm and diameters of (10 ± 4) nm. These parameters are not substantially changed during overgrowth of a GaN cap and the resulting quantum dots have a composition of In0.15Ga0.85N. The observation of narrow luminescence peaks in micro-PL measurements proves light emission from discrete energy states and the optical properties indicate strong confinement of carriers in the quantum dots and an unusually weak impact of piezoelectric field effects.

Enhanced fluorescent stability of copper indium sulfide quantum dots through incorporating aluminum into ZnS shell

2016 ◽  
Vol 662 ◽  
pp. 173-178 ◽  
Author(s):  
Jong-Hoon Kim ◽  
Eun-Pyo Jang ◽  
Yongwoo Kwon ◽  
Ho Seong Jang ◽  
Young Rag Do ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Indium Sulfide ◽  
Copper Indium
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