Increase of Magnetic Sensitivity of Magnetically Controlled MEMS Switches

MRS Advances ◽  
2016 ◽  
Vol 1 (34) ◽  
pp. 2393-2399
Author(s):  
Sergey M. Karabanov ◽  
Dmitry V. Suvorov ◽  
Gennady P. Gololobov ◽  
Dmitry Y. Tarabrin ◽  
Evgeny V. Slivkin
Keyword(s):  
Magnetic Field ◽  
Research Results ◽  
Mems Switches ◽  
Field Concentrator ◽  
Magnetic Sensitivity ◽  
Sensitivity Increase

ABSTRACTThe paper presents the research results of influence of various parameters of magnetic field concentrator geometry on sensitivity of magnetically controlled MEMS switches. It is shown that magnetic sensitivity increases with the growth of the magnetic concentrator width and practically does not depend on its length. It is established that dependence of magnetic sensitivity on the overlap length of the ferromagnetic flexible contact-concentrator has a minimum corresponding to 2-3 lengths of the contact gap. Recommendations on sensitivity increase of magnetically controlled MEMS switches are provided.

Monte Carlo calculation of the energy parameters and spatial distribution of the cathodic arc ions while passing through the macro-particles filters

2018 ◽  
Vol 1 (1) ◽  
pp. 30-34 ◽  
Author(s):  
Alexey Chernogor ◽  
Igor Blinkov ◽  
Alexey Volkhonskiy
Keyword(s):  
Magnetic Field ◽  
Mass Transfer ◽  
Monte Carlo ◽  
Monte Carlo Calculation ◽  
Inhomogeneous Magnetic Field ◽  
Flow Energy ◽  
Wide Range ◽  
Field Concentrator ◽  
Cathodic Arc ◽  
The Magnetic Field

The flow, energy distribution and concentrations profiles of Ti ions in cathodic arc are studied by test particle Monte Carlo simulations with considering the mass transfer through the macro-particles filters with inhomogeneous magnetic field. The loss of ions due to their deposition on filter walls was calculated as a function of electric current and number of turns in the coil. The magnetic field concentrator that arises in the bending region of the filters leads to increase the loss of the ions component of cathodic arc. The ions loss up to 80 % of their energy resulted by the paired elastic collisions which correspond to the experimental results. The ion fluxes arriving at the surface of the substrates during planetary rotating of them opposite the evaporators mounted to each other at an angle of 120° characterized by the wide range of mutual overlapping.

High Resolution Current Imaging by Direct Magnetic Field Sensing

2003 ◽  
Author(s):  
S.I. Woods ◽  
Nesco M. Lettsome ◽  
A.B. Cawthorne ◽  
L.A. Knauss ◽  
R.H. Koch
Keyword(s):  
Magnetic Field ◽  
High Resolution ◽  
Spatial Resolution ◽  
Great Promise ◽  
Magnetoresistive Sensor ◽  
Magnetic Sensitivity ◽  
Current Lines ◽  
Scanning Squid ◽  
Scanning Fiber ◽  
Ferromagnetic Probe

Abstract Two types of magnetic microscopes have been investigated for use in high resolution current mapping. The scanning fiber/SQUID microscope uses a SQUID sensor coupled to a nanoscale ferromagnetic probe, and the GMR microscope employs a nanoscale giant magnetoresistive sensor. Initial scans demonstrate that these microscopes can resolve current lines less than 10 µm apart with edge resolution of 1 µm. These types of microscopes are compared with the performance of a standard scanning SQUID microscope and with each other with respect to spatial resolution and magnetic sensitivity. Both microscopes show great promise for identifying current defects in die level devices.

scholarly journals Magnetic Field Concentrator Based on the Superconducting Films with Nanosize Cuts

2019 ◽  
Vol 1182 ◽  
pp. 012007
Author(s):  
L P Ichkitidze ◽  
M V Belodedov ◽  
S V Selishchev ◽  
D V Telishev
Keyword(s):  
Magnetic Field ◽  
Superconducting Films ◽  
Field Concentrator

Research of Magnetic Characteristics of the Split-Drain MAGFET Based on Nano-Polysilicon TFTs

2015 ◽  
Vol 645-646 ◽  
pp. 132-138
Author(s):  
Xiao Feng Zhao ◽  
Han Yu Guan ◽  
Mei Wei Lv ◽  
Yi Nan Bai ◽  
Dian Zhong Wen
Keyword(s):  
Magnetic Field ◽  
Thin Film Transistor ◽  
Magnetic Field Effect ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
High Resistivity ◽  
Magnetic Characteristics ◽  
The Absolute ◽  
Magnetic Sensitivity ◽  
High Resistivity Silicon

The split-drain magnetic field effect transistor (MAGFET) based on nanopolysilicon thin film transistor (TFT) is fabricated on <100> high resistivity silicon substrates by (complementary metal oxide semiconductor) CMOS technology in this paper. It contains source (S), drain1 (D1), drain2 (D2) and gate (G), and adopts nanopolysilicon thin films and nanopolysilicon/high resistivity silicon heterojunction interfaces as the magnetic field sensing layers. The influence of the channel size and shapes on the transistor, are studied to further improve its magnetic sensitivity. When the ratio of channel length and width (L/W) of MAGFET is 80 μm/160 μm, VDS=5.0 V, the MAGFET with convex channel has higher magnetic sensitivity than the rectangle and concave, the absolute current magnetic sensitivity SI and the absolute voltage magnetic sensitivity SV of the proposed sensor reach the maximum values, and are 0.021 mA/T and 55 mV/T, respectively.

Increase of the magnetic sensitivity of magnetically controlled MEMS switches

2015 ◽  
Author(s):  
Sergey M. Karabanov ◽  
Dmitriy V. Suvorov ◽  
Gennadiy P. Gololobov ◽  
Dmitriy Yu. Tarabrin ◽  
Evgeniy V. Slivkin
Keyword(s):  
Mems Switches ◽  
Magnetic Sensitivity

Novel Fabrication Process for the Integration of MEMS Devices with Thick Amorphous Soft Magnetic Field Concentrators

2007 ◽  
Vol 1052 ◽  
Author(s):  
Simon Brugger ◽  
Wilhelm Pfleging ◽  
Oliver Paul
Keyword(s):  
Magnetic Field ◽  
Laser System ◽  
Magnetic Sensor ◽  
Fabrication Process ◽  
Magnetic Flux Density ◽  
Mems Devices ◽  
Integration Process ◽  
Soft Magnetic ◽  
Micro Patterning ◽  
Field Concentrator

AbstractThis paper reports a novel fabrication process enabling the integration of mechanical MEMS devices with thick amorphous soft magnetic field concentrators. The integration process combines silicon on insulator technology for the MEMS device fabrication and epoxy-resin-based attachment of 18-µm-thick amorphous soft magnetic ribbons followed by a wet chemical structuring process. The fabrication process is reported on the basis of a field-concentrator-based resonant magnetic sensor combining an electrostatically driven micromechanical resonator and a planar magnetic field concentrator with two narrow gaps. For realization of the concentrator gaps, the integration process is extended by micro-patterning of the soft magnetic ribbons via UV-laser ablation using an excimer laser system. The characterization of the fabricated resonant magnetic sensor using a stroboscopic video microscope for in-plane motion measurement shows a high sensitivity of 390 kHz/T at a magnetic flux density of 158 µT.

Microfabricated oscillator for radio-frequency microscopy with integrated magnetic field concentrator

2003 ◽  
Vol 74 (3) ◽  
pp. 1282-1284 ◽  
Author(s):  
T. May ◽  
E. Il’ichev ◽  
H.-G. Meyer ◽  
M. Grajcar
Keyword(s):  
Magnetic Field ◽  
Radio Frequency ◽  
Field Concentrator

scholarly journals Coupling effect in field Hall elements based on thin-film SOI MOS transistors

2020 ◽  
Vol 6 (4) ◽  
pp. 155-158
Author(s):  
Aleksey V. Leonov ◽  
Victor N. Murashev ◽  
Dmitry N. Ivanov ◽  
V.D. Kirilov
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Coupling Effect ◽  
Silicon On Insulator ◽  
Mos Transistors ◽  
Magnetic Field Sensors ◽  
Magnetic Sensitivity ◽  
Hall Elements

The influence of the coupling effect on the parameters of field Hall elements based on thin-film MOS transistors has been studied. Analysis of the development of today’s microelectronics shows the necessity of developing the element base for high performance sensors based on silicon technologies. One way to significantly improve the performance of sensing elements including magnetic field sensors is the use of thin-film transistors on the basis of silicon on insulator (SOI) structures. It has been shown that field Hall sensors (FHS) may become the basis of high-performance magnetic field sensors employing the coupling effect occurring in the double gate vertical topology of these sensing elements. Electrophysical studies of FHS have been conducted for different gate bias and power supply modes. The results show that the coupling effect between the gates occurs in FHS if the thickness of the working layer between the gates is 200 nm. This effect leads to an increase in the effective carrier mobility and hence an increase in the magnetic sensitivity of the material. Thus field Hall elements based on thin-film transistors fabricated using silicon technologies provide for a substantial increase in the magnetic sensitivity of the elements and allow their application in highly reliable magnetic field sensors.

scholarly journals Magnetic field concentrator for probing optical magnetic metamaterials

2010 ◽  
Vol 18 (25) ◽  
pp. 25906 ◽  
Author(s):  
Tomasz J. Antosiewicz ◽  
Piotr Wróbel ◽  
Tomasz Szoplik
Keyword(s):  
Magnetic Field ◽  
Field Concentrator
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