Al+ implanted vertical 4H-SiC p-i-n diodes: experimental and simulated forward current-voltage characteristics

MRS Advances ◽  
2016 ◽  
Vol 1 (54) ◽  
pp. 3637-3642 ◽  
Author(s):  
Roberta Nipoti ◽  
Giovanna Sozzi ◽  
Maurizio Puzzanghera ◽  
Roberto Menozzi
Keyword(s):  
Temperature Dependence ◽  
Thermal Activation ◽  
Reverse Current ◽  
Activation Energies ◽  
Vacancy Defect ◽  
Current Component ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Post Implantation

ABSTRACT The temperature dependence of the forward and reverse current voltage characteristics of circular Al+ implanted 4H-SiC p-i-n vertical diodes of various diameters, post implantation annealed at 1950 °C/5 min, have been used to obtain the thermal activation energies of the defects responsible of the generation and the recombination currents, as well as the area and the periphery current component of the current voltage characteristics. The former have values compatible with those of the traps associated to the carbon vacancy defect in 4H-SiC. The hypothesis that only these traps may justify the trend of the current voltage characteristics of the studied diodes has been tested by simulations in a Synopsys Sentaurus TCAD suite.

Al+ Implanted 4H-SiC p+-i-n Diodes: Evidence for Post-Implantation-Annealing Dependent Defect Activation

2014 ◽  
Vol 778-780 ◽  
pp. 657-660 ◽  
Author(s):  
Ulrike Grossner ◽  
Francesco Moscatelli ◽  
Roberta Nipoti
Keyword(s):  
Activation Energy ◽  
Ideality Factor ◽  
Reverse Current ◽  
Activation Energies ◽  
Forward Current ◽  
Current Voltage ◽  
Different Temperatures ◽  
Current Voltage Characteristics ◽  
The One ◽  
Post Implantation

Two families of Al+implanted vertical p+in diodes that have been processed all by identical steps except the post implantation annealing one have been characterized with current voltage measurements from -100 to +5V at different temperatures. Analysis of the static forward current voltage characteristics shows two different ideality factor regions, which are distinct for each family. The reverse current voltage characteristics reveals corresponding two different activation energies. These are assumed to be correlated to the Z1/2defect for the one case and another one with an activation energy of 0.25eV.

P+ implanted 6H-SiC n+-i-p diodes: evidence for a post-implantation-annealing dependent defect activation

2014 ◽  
Vol 1693 ◽  
Author(s):  
R. Nipoti ◽  
M. Puzzanghera ◽  
F. Moscatelli
Keyword(s):  
Activation Energy ◽  
Temperature Dependence ◽  
Ideality Factor ◽  
Low Voltage ◽  
Reverse Current ◽  
Forward Current ◽  
Current Region ◽  
Recombination Centers ◽  
Energy Dependent ◽  
Post Implantation

ABSTRACTTwo n+-i-p 6H-SiC diode families with P+ ion implanted emitter have been processed with all identical steps except the post implantation annealing: 1300°C/20min without C-cap has been compared with 1950°C/10min with C-cap. The analysis of the temperature dependence of the reverse current at low voltage (-100V) in the temperature range 27-290°C shows the dominance of a periphery current which is due to generation centers with number and activation energy dependent on the post implantation annealing process. The analysis of the temperature dependence of the forward current shows two ideality factor n region, one with n = 1.9/2 at low voltage and the other one with 1 < n < 2 without passing through 1 for increasing voltages. For both the diode families the current with n = 1.9/2 is a periphery current due to recombination centers with a thermal activation energy near the 6H-SiC mid gap. In the forward current region of 1 < n < 2, the two diode families show different ideality factor values which could be attributed to a different post implantation annealing defect activation.

The Growth of Effective Potential Barrier Height in Au/ (100) n-GaP Contact Induced by Phosphorous Ion Implantation

1992 ◽  
Vol 262 ◽  
Author(s):  
Anatol I. Ivashchenko ◽  
F.Ya. Kopanskaya ◽  
A. I. Solomonov ◽  
V. P. Tarchenko
Keyword(s):  
Ion Implantation ◽  
Barrier Height ◽  
Current Transport ◽  
Rapid Annealing ◽  
Forward Current ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Recombination Centers ◽  
Current Voltage Characteristics ◽  
Post Implantation

ABSTRACTThe effect of phosphorous ion implantation and/or rapid thermal treatment on the behaviour of Schottky barrier elect-rophysical characteristics formed on the plane (100) of n-GaP epitaxial layer is discussed. Even though the implantation and post implantation rapid annealing lead to the generation of deep recombination centers in the bulk, the dominant mechanism of current transport across the barrier structure becomes thermo-ionic - like in initial samples. The analysis of the behaviour of forward current-voltage characteristics, steady state capacitance-voltage characteristics and DLTS data allow to conclude that the obtained reduction of forward current after ion im- plactation can be attributed to an increase of effective potenia! barrier height.

Steady-State and Transient Characteristics of High-Voltage 4H-SiC Junction Diodes

2005 ◽  
Vol 483-485 ◽  
pp. 973-976 ◽  
Author(s):  
Pavel A. Ivanov ◽  
Michael E. Levinshtein ◽  
Tigran T. Mnatsakanov ◽  
John W. Palmour ◽  
Ranbir Singh ◽  
...  
Keyword(s):  
High Voltage ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Reverse Current ◽  
Minority Carrier Lifetime ◽  
Voltage Decay ◽  
Forward Current ◽  
Current Voltage ◽  
Injection Coefficient ◽  
Current Voltage Characteristics

Forward current-voltage characteristics, reverse current recovery and post-injection voltage decay are measured for high voltage 4H-SiC p+non+-diodes. The effects of both minority carrier lifetime in diode no-base and injection coefficient of p+-emitter are investigated with respect to device performance at high injection levels.

Study on Schottky Diode Characteristics Improving by X-Ray Irradiation

2013 ◽  
Vol 717 ◽  
pp. 113-116
Author(s):  
Sani Klinsanit ◽  
Itsara Srithanachai ◽  
Surada Ueamanapong ◽  
Sunya Khunkhao ◽  
Budsara Nararug ◽  
...  
Keyword(s):  
Leakage Current ◽  
Schottky Diode ◽  
Room Temperature ◽  
The Other ◽  
Low Power Consumption ◽  
Initial Value ◽  
X Ray ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

The effect of soft X-ray irradiation to the Schottky diode properties was analyzed in this paper. The built-in voltage, leakage current, and work function of Schottky diode were investigated. The current-voltage characteristics of the Schottky diode are measured at room temperature. After irradiation at 70 keV for 55 seconds the forward current and leakage current are increase slightly. On the other hand, the built-in voltage is decrease from the initial value about 0.12 V. Consequently, this method can cause the Schottky diode has low power consumption. The results show that soft X-ray can improve the characteristics of Schottky diode.

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