Effect of surface cleaning on contact resistivity of amorphous GeCu2Te3 to a W electrode

MRS Advances ◽  
2016 ◽  
Vol 1 (39) ◽  
pp. 2731-2736 ◽  
Author(s):  
S. Shindo ◽  
Y. Sutou ◽  
J. Koike ◽  
Y. Saito ◽  
Y.-H. Song
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Surface Oxidation ◽  
Random Access Memory ◽  
Surface Cleaning ◽  
High Thermal Stability ◽  
Contact Resistivity ◽  
Access Memory ◽  
Change Material ◽  
Effect Of Surface

ABSTRACTThe contact resistivity, ρc, between phase change material (PCM) and an electrode plays an important role in the operation of highly scaled phase change random access memory (PCRAM). We investigated the effect of surface cleaning on the ρc between a W electrode and amorphous GeCu2Te3 (GCT) which shows high thermal stability. The surface cleaning of the amorphous GCT was conducted by Ar reverse sputtering. The ρc of the amorphous GCT whose surface was cleaned with Ar reverse sputtering was 6.7×10-3Ω cm2. Meanwhile, the ρc of the amorphous GCT with no surface cleaning was 8.0×10-5Ω cm2. The low ρc in the amorphous GCT with no surface cleaning was apparently due to the existence of a low resistance Cu-rich underlayer which was formed as a consequence of surface oxidation of the amorphous GCT. These results indicate that the surface of a PCM must be treated carefully to accurately measure the contact resistivity between the PCM and electrodes.

Effect of the Bottom Electrode Contact (BEC) on the phase transformation of N2 doped Ge2Sb2Te 5 (N-GST) in a Phase-change Random Access Memory

2004 ◽  
Vol 830 ◽  
Author(s):  
Suyoun Lee ◽  
Y. J. Song ◽  
Y. N. Hwang ◽  
S. H. Lee ◽  
J. H. Park ◽  
...  
Keyword(s):  
Phase Transformation ◽  
Phase Change ◽  
Bottom Electrode ◽  
Random Access ◽  
Surface Oxidation ◽  
Random Access Memory ◽  
Access Memory ◽  
Electrode Contact ◽  
Electrode Metal ◽  
Contact Size

With respect to the operation of a Phase-change Random Access Memory (PRAM or PcRAM), we studied the effect of the contact between the electrode metal and the chalcogenide glass, N2 doped Ge2Sb2Te5 in this report. We investigated a change of the resistance-programming current pulse (R-I) curve varying the contact size and the electrode material. Also we tested the surface oxidation of the electrode. We found that the programming current, the resistance of the programmed state (“RESET”) and the erased state (“SET”) were highly dependent on the above parameters. These results are presented and a more effective way to the high density PRAM will be proposed.

Si 1 Sb 2 Te 3 phase change material for chalcogenide random access memory

2007 ◽  
Vol 16 (8) ◽  
pp. 2475-2478 ◽  
Author(s):  
Zhang Ting ◽  
Song Zhi-Tang ◽  
Liu Bo ◽  
Liu Wei-Li ◽  
Feng Song-Lin ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Change Material

Novel phase-change material GeSbSe for application of three-level phase-change random access memory

2010 ◽  
Vol 54 (4) ◽  
pp. 443-446 ◽  
Author(s):  
Yifeng Gu ◽  
Zhitang Song ◽  
Ting Zhang ◽  
Bo Liu ◽  
Songlin Feng
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Change Material

Sb-rich Si–Sb–Te Phase-Change Material for Phase-Change Random Access Memory Applications

2011 ◽  
Vol 58 (12) ◽  
pp. 4423-4426 ◽  
Author(s):  
Liangcai Wu ◽  
Xilin Zhou ◽  
Zhitang Song ◽  
Min Zhu ◽  
Yan Cheng ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Memory Applications ◽  
Change Material

Advantages of SixSb2Te phase-change material and its applications in phase-change random access memory

2011 ◽  
Vol 65 (7) ◽  
pp. 622-625 ◽  
Author(s):  
Yifeng Gu ◽  
Yan Cheng ◽  
Sannian Song ◽  
Ting Zhang ◽  
Zhitang Song ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Change Material
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