MoOx Hole Collection Layer for a-Si:H Based Photovoltaic Cells

MRS Advances ◽  
2016 ◽  
Vol 1 (14) ◽  
pp. 977-983 ◽  
Author(s):  
Erenn Ore ◽  
Jimmy Melskens ◽  
Arno Smets ◽  
Miro Zeman ◽  
Gehan Amaratunga

ABSTRACTAn experimental investigation to verify the suitability of MoOx as the hole collection layer for a-Si:H based thin film photovoltaic cell is carried out. The photovoltaic cell investigated has the structure of MoOx (hole collection layer) / intrinsic a-Si:H (photoactive layer) / phosphorus doped a-Si:H (electron collection layer) / Ag (back reflector electrode); all deposited in that order onto an Asahi glass (type U) substrate, which is also acting as the transparent front electrode for the cell. The effects of different post deposition annealing temperatures are investigated. The highest efficiency values are obtained for the cells annealed at 120°C. For the photovoltaic cell with 100 nm thick photoactive layer, the highest efficiency is measured to be 6.46 % with an open current voltage (Voc) of 827 mV and a short current density of (Jsc) of 10.44 mA/cm2. For the photovoltaic cell with 300 nm thick photoactive layer, the highest efficiency is measured to be 7.93 % with Voc of 818 mV and Jsc of 13.24 mA/cm2. The efficiency measurements are carried out under AM1.5 test conditions. Jsc values are corrected according to the external quantum efficiency measurements of the cells in the AM1.5 photovoltaic spectrum region between 270 nm and 800 nm. Compared to the reference cell with boron doped μ-SiOx layer acting as the hole collection layer, the cell with MoOx hole collection layer has similar FF, lower Voc, higher Jsc for wavelength up to the green light region of the AM1.5 spectrum and lower Jsc for the longer wavelengths.

MRS Advances ◽  
2017 ◽  
Vol 2 (15) ◽  
pp. 863-867 ◽  
Author(s):  
Erenn Ore ◽  
Jimmy Melskens ◽  
Arno Smets ◽  
Miro Zeman ◽  
Gehan Amaratunga

ABSTRACTAn ultra-thin LiF layer in conjunction with an Al layer is employed as the electron collector for the a-Si:H based single-junction thin film photovoltaic cell. The cell has the structure of boron doped μ-SiOx (hole collector) - intrinsic a-Si:H (photoactive layer) - LiF / Al (electron collector and back electrode). The substrate used is U type Asahi glass, which is also acting as the transparent front electrode. For the cell with the 1.5 nm thick LiF layer, annealed at 120°C, the open current voltage (VOC) of 0.936 V, the short current density (JSC) of 13.598 mA/cm2, and the fill factor (FF) of 0.690 are achieved. The JSC and VOC values are comparable to the values measured for the a-Si:H based p-i-n reference cell, but the FF value is found to be lower, which is attributed to the losses due to recombination at the intrinsic a-Si:H / LiF / Al junction. The current versus voltage measurements are carried out under the standard test conditions. The JSC values are corrected according to the external quantum efficiency measurements of the cells in the AM1.5 spectrum region between 270 nm and 800 nm.


2019 ◽  
Vol 14 (3) ◽  
pp. 1-7
Author(s):  
André Luiz Costa Carvalho ◽  
Davies William de Lima Monteiro

We propose a photo-adjustable arrangement that electrically combines a pn-junction operating in photovoltaic mode to a suitably designed photoconductor in order to keep the output current, voltage, or both, fixed. The characteristic I-V curves of a pn-junction under different light intensities do not intersect each other, resulting in different operational points for a given load. However, the resistivity of the photoconductor also changes with light, and by connecting it in parallel to the photovoltaic cell, and exposing both to the same level of irradiance, it is possible to find a design that alters the I-V curves of the cell in such a way that they will intersect at a chosen point. That could offer an alternative solution for a stable supply to autonomous DC loads. This paper presents an example case for a silicon pn-junction, considering the presence of parasitic components.


Measurements of the transmembrane potential difference ( V ) under various conditions have demonstrated the operation of an electrogenic Cl - pump in the outer plasma membrane (plasmalemma) of the unicellular marine alga Acetabularia . In preparations of partly purified membranes (containing plasmalemma), there is Cl - -stimulated, N , N '-dicyclohexylcarbodiimide-insensitive, vanadate-sensitive ATPase activity with a pH optimum around pH 6.5. These properties are consistent with the assumption that the electrogenic Cl - pump is an ATPase. In order to investigate electrical details of this ‘ Mitchellian ’ type of charge-translocating enzyme, steady-state current-voltage curves of the electrogenic pump ( I p ( V )) were measured in vivo under dark and light conditions and analysed by a two-state reaction kinetic model. This model with the resulting parameters predicts V -sensitive, unidirectional Cl - effluxes through the pump. The predictions of this model agree with the experimental results. Green light causes a fast decrease of V , which is explained as a disturbance of the pump cycle. Relaxation studies on this effect and reaction kinetic analysis of I p ( V ) under different external Cl - concentrations are used to develop a consistent three-state model of the pump that includes the order of and absolute rate constants of individual reactions, states of charge, stoichiometry, voltage-sensitivity and density of the pump molecules in the membrane.


2014 ◽  
Vol 989-994 ◽  
pp. 284-287 ◽  
Author(s):  
Ze Biao Tang ◽  
Xiao Xia Sun ◽  
Le Ping Miao ◽  
Hua Yin Shen

A novel electron donor unit based on phenothiazine has been designed and constructed. The target compound 10-octyl-3,7-di (thiophen-2-yl)-10H-phenothiazine was easily synthesized in high yields with a milder and efficient route via the Suzuki coupling reaction. Optical spectra show that, from the solution to the solid state, both the absorption and fluorescence spectra of the target compound are small blue-shifted. Moreover, the fluorescence spectra exhibit the emission maxima of the target compound ranging from 485 nm to 496 nm, which belongs to blue-green light region. As expected, the target compound should be a promising donor to construct D-A type materials for applications in organic light-emitting diodes (OLEDs).


2018 ◽  
Vol 7 (4) ◽  
pp. 2651
Author(s):  
Bashar Mohammed Salih ◽  
Rasha A. Mohmeed ◽  
Mohammed Ahmed Ibrahim

 Many parameters and environments conditions will affect the behavior of the photovoltaic cell. This paper investigates, theoretically the variation of each temperature and irradiation effects on the output of the photovoltaic cell characteristics. Modeling of the photovoltaic cell scheme essentially requires taking weather data (temperature and irradiance) as input variables. The photovoltaic outputs are the current, voltage and power. Though, conclude the characteristics I-V or P-V desires of these important variables. Any variation in the entries directly shows variations in outputs. The characteristic curves are obtained with the use practical readings and measurements are illustrated directly from the solar power plant in the Technical Engineering College of Mosul. The complete modeling is then computer-generated using MATLAB/Simulink software owing to its common use and its helpfulness.  


MRS Advances ◽  
2017 ◽  
Vol 2 (15) ◽  
pp. 825-833 ◽  
Author(s):  
Erenn Ore ◽  
Gehan Amaratunga

ABSTRACTIn order to collect the hot electrons, light trapping using cylindrical quartz substrates for ultra-thin a-Si:H photovoltaic cells with no doped layers is introduced. The photovoltaic cell has the structure of 2nmMoOx(hole collection layer) – 10nmintrinsic a-Si:H (photoactive layer) – 1.5nmLiF / 300nmAl (electron collection layer and back electrode), all deposited in that order onto a cylindrical quartz substrate covered with a 100nmITO layer, which is acting as the transparent front electrode for the cell. By rotating the cell with respect to the incoming light, the angle of incidence of the incoming light for which the cell efficiency is at its highest value, is determined.


2003 ◽  
Vol 77 (1) ◽  
pp. 105-112 ◽  
Author(s):  
X.M. Tian ◽  
M. Rusop ◽  
Y. Hayashi ◽  
T. Soga ◽  
T. Jimbo ◽  
...  

2017 ◽  
Vol 886 ◽  
pp. 24-31 ◽  
Author(s):  
Allah Bakhsh ◽  
Iftikhar Hussain Gul ◽  
Ashari Maqsood ◽  
Shang Hsuan Wu ◽  
Ching Hsiang Chan ◽  
...  

One-dimensional CdZnS nanostructures have been synthesized through the sublimation. Effect of high substrate temperature on morphology, structural and optical properties of these nanostructures has been studied. X-Ray diffraction peak intensity, lattice parameters, crystallite size decreased with an increase in substrate temperature. The morphology changed with the increase in the substrate temperature. Raman Spectroscopy confirmed the existence of constituent elements in CdZnS solid solution and an increase of Zn concentration with the rise in substrate temperature. The nanostructures exhibited strong photoluminescence emission in the green light region with a substrate temperature-dependent blue shift of 53 meV in emission energy. The Stoke’s shift energy raised from 45 meV to 302 meV as the substrate temperature increased from 510 °C to 550 °C. The stoichiometric deviancies, crystallite size, and quantum confinement effects resulted into an increase in the optical band gap from 2.4 eV to 2.71 eV. The results showed that CdZnS nanostructures could be potential candidates for nanostructure based optoelectronics and photovoltaic devices.


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