Subwavelength grating wideband reflectors with tapered sidewall profile

MRS Advances ◽  
2015 ◽  
Vol 1 (23) ◽  
pp. 1683-1691 ◽  
Author(s):  
W. Yu ◽  
D. Wu ◽  
X. Duan ◽  
Y. Yi
Keyword(s):  
Critical Role ◽  
Fabrication Process ◽  
Etching Process ◽  
Band Edge ◽  
High Contrast ◽  
Subwavelength Grating ◽  
Nanophotonic Devices ◽  
Average Reflectance ◽  
Cmos Compatible ◽  
Simulation Results

AbstractOne main difference between practical device and ideal design for subwavelength grating structure is the tapered sidewall profile of grating, which is normally obtained by the practical CMOS-compatible fabrication and etching process. Our work has investigated the impacts of tapered sidewall profile on the subwavelength grating wideband reflector characteristics. Both zero-contrast gratings (ZCG) and high- contrast gratings (HCG) are numerically investigated in detail and the results show a distinct differences of the impacts of tapered sidewall profile of grating. The simulation results reveal that this factor play a critical role in determining the reflection bandwidth, average reflectance, and the band edge. Our study has potential in guiding the utilization of subwavelength grating wideband reflector on application of a variety of nanophotonic devices and their integration, as well as to facilitate the design of the fabrication process on the control of tapered sidewall profile.

TCAD Study of the Raised SiGe Source/Drain in 40nm PMOS

2015 ◽  
Vol 645-646 ◽  
pp. 70-74 ◽  
Author(s):  
Min Zhong ◽  
Yu Hang Zhao ◽  
Shou Mian Chen ◽  
Ming Li ◽  
Shao Hai Zeng ◽  
...  
Keyword(s):  
Computer Aided Design ◽  
Critical Role ◽  
Sige Layer ◽  
Strain Engineering ◽  
Effect Transistor ◽  
Simulation Results ◽  
Aided Design ◽  
The Relationship ◽  
Growth Experiments ◽  
Good Agreement

An embedded SiGe layer was applied in the source/drain areas (S/D) of a field-effect transistor to boost the performance in the p channels. Raised SiGe S/D plays a critical role in strain engineering. In this study, the relationship between the SiGe overfilling and the enhancement of channel stress was investigated. Systematic technology computer aided design (TCAD) simulations of the SiGe overfill height in a 40 nm PMOS were performed. The simulation results indicate that a moderate SiGe overfilling induces the highest stress in the channel. Corresponding epitaxial growth experiments were done and the obtained experimental data was in good agreement with the simulation results. The effect of the SiGe overfilling is briefly discussed. The results and conclusions presented within this paper might serve as useful references for the optimization of the embedded SiGe stressor for 40 nm logic technology node and beyond.

CMOS compatible fabrication process of MEMS resonator for timing reference and sensing application

2015 ◽  
Author(s):  
Duc H. Huynh ◽  
Phuong D. Nguyen ◽  
Thanh C. Nguyen ◽  
Stan Skafidas ◽  
Robin Evans
Keyword(s):  
Fabrication Process ◽  
Mems Resonator ◽  
Cmos Compatible ◽  
Sensing Application

scholarly journals Efficient and Energy Scheme for Wireless Rechargeable Sensor Network

2018 ◽  
Vol 9 (2) ◽  
pp. 265
Author(s):  
S V Saravanan
Keyword(s):  
Sensor Network ◽  
Network Lifetime ◽  
Communication Skill ◽  
Critical Role ◽  
Power Capacity ◽  
Simulation Results ◽  
Coverage And Connectivity ◽  
Wireless Rechargeable Sensor Network

<span lang="EN-US">The wireless rechargeable sensor network is attractive crucial and important in recent years for the advancement of wireless energy communication skill. The previous explore shown that not all of sensors can be recharged due to the limitation of power capacity to mobile chargers can carry. If a sensor playing a critical role in a sensing task cannot function as usual due to the exhausted energy, then the sensing task will be interrupted. Therefore, this paper proposes a novel recharging mechanism taking the priorities of sensors into consideration such that mobile chargers can recharge the sensor with a higher priority and the network lifetime can be efficiently sustained. The priority of each sensor depends on its contribution to the sensing task, including the coverage and connectivity capabilities. Based on the priority, the sensor with a higher priority will be properly recharged to extend the network lifetime. Simulation results show that the proposed mechanism performs better against the related work in network lifetime.</span>

scholarly journals Stochastic approach to study control strategies of Covid-19 pandemic in India

2020 ◽  
Vol 148 ◽  
Author(s):  
Athokpam Langlen Chanu ◽  
R. K. Brojen Singh
Keyword(s):  
Control Strategies ◽  
Critical Role ◽  
Stochastic Approach ◽  
Effective Control ◽  
Demographic Stochasticity ◽  
Social Distancing ◽  
Exposed Population ◽  
Stochastic Framework ◽  
Simulation Results ◽  
Susceptible Populations

Abstract India is one of the severely affected countries by the Covid-19 pandemic at present. Within the stochastic framework of the SEQIR model, we studied publicly available data of the Covid-19 patients in India and analysed possible impacts of quarantine and social distancing as controlling strategies for the pandemic. Our stochastic simulation results clearly show that proper quarantine and social distancing should be maintained right from the start of the pandemic and continued until its end for effective control. This calls for a more disciplined social lifestyle in the future. However, only social distancing and quarantine of the exposed population are found not sufficient enough to end the pandemic in India. Therefore, implementation of other stringent policies like complete lockdown as well as increased testing of susceptible populations is necessary. The demographic stochasticity, which is quite visible in the system dynamics, has a critical role in regulating and controlling the pandemic.

scholarly journals Fabrication and Characterization of Black GaAs Nanoarrays via ICP Etching

2020 ◽  
Author(s):  
Jing Ma ◽  
Yongqiang Zhao ◽  
Wen Liu ◽  
Fuhua Yang ◽  
Xiaodong Wang
Keyword(s):  
Inductively Coupled Plasma ◽  
Fabrication Process ◽  
Etching Process ◽  
Photon Absorption ◽  
Hydrophobic Property ◽  
Water Contact ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Fabrication And Characterization

Abstract GaAs nanostructures has attracted more and more attention due to its excellent properties such as increasing photon absorption. The fabrication process on GaAs substrate were rarely reported and most of the preparation processes are complex. Here, we reported a black GaAs fabrication process using a simple Inductively coupled plasma (ICP) etching process，with no extra lithography process. The fabricated sample has a low Reflectance value，close to zero. Besides, the black GaAs also displayed hydrophobic property, with a water contact angle (CA) of 125°. This kind of black GaAs etching process could be added to the fabrication workflow of photodetectors and solar cell devices to further improve their characteristics.

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