scholarly journals Mass Production of α-silicon Nitride Single-crystalline Nanowires

2019 ◽  
Vol 34 (6) ◽  
pp. 667
Author(s):  
Chao LEI ◽  
Fei WEI
Author(s):  
Ilya A. Rodionov ◽  
Alexander S. Baburin ◽  
Ilya A. Rizhikov ◽  
Igor V. Trofimov ◽  
Ivan A. Philippov ◽  
...  

Coatings ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 563
Author(s):  
Toshiyuki Hamada ◽  
Shunsuke Masuda ◽  
Kazuki Nishida ◽  
Soma Yamamoto

In this study, we investigated the characteristics of electrode grooves formed by etching silicon nitride (SixNy) films using surface-discharge plasma under Ar/CF4 and He/CF4 gases on the basis of differences in the widths of the electrode grooves etched on the SixNy film. The widths of the grooves etched using Ar as the carrier gas were narrower than those etched using He, and the etching speed achieved using Ar was higher than that achieved using He. Furthermore, the electrode groove created by surface-discharge plasma gradually widened as etching time and applied voltage increased.


2005 ◽  
Vol 86 (18) ◽  
pp. 181901 ◽  
Author(s):  
Guifu Zou ◽  
Biao Hu ◽  
Kan Xiong ◽  
Hui Li ◽  
Chao Dong ◽  
...  

2016 ◽  
Vol 4 (11) ◽  
pp. 1829-1837 ◽  
Author(s):  
Yucheng Liu ◽  
Jiankun Sun ◽  
Zhou Yang ◽  
Dong Yang ◽  
Xiaodong Ren ◽  
...  

Author(s):  
H. Suematsu ◽  
J. J. Petrovic ◽  
T. E. Mitchell

Silicon nitride(Si3N4) is well known to be a most promising ceramic material for high temperature structural applications. It has high strength even at 1200°C and its fracture toughness is about 5 to 7 MPa•m½. Si3N4 has been manufactured on mass production lines as the compressor rotor for turbo chargers. For high temperature use, it is important to know the deformation characteristics of the material and the role played by dislocations and other defects. However, research on the nature of defects in Si3N4 has been limited considering the importance of Si3N4. In this study, we have examined defects in single crystals of Si3N4.


2008 ◽  
Vol 181 (1) ◽  
pp. 211-215 ◽  
Author(s):  
Fengmei Gao ◽  
Weiyou Yang ◽  
Yi Fan ◽  
Linan An

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