scholarly journals Au Film Electrodes on CdZn Te Surface: Preparation and Ohmic Contact Property

2018 ◽  
Vol 33 (3) ◽  
pp. 273 ◽  
Author(s):  
XIE Jing-Hui ◽  
LIU Yu-Cong ◽  
WANG Chao ◽  
YIN Zi-Wei ◽  
CHEN Jia-Dong ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Surface Preparation ◽  
Au Film ◽  
Contact Property

Effect of oxygen incorporation ina-plane GaN on p-type ohmic contact property

2014 ◽  
Vol 53 (9) ◽  
pp. 090307 ◽  
Author(s):  
Ki-Chang Jung ◽  
Inwoo Lee ◽  
Jaehyoung Park ◽  
Hyojung Bae ◽  
Chung Yi Kim ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Oxygen Incorporation ◽  
Contact Property ◽  
Effect Of Oxygen ◽  
P Type

Effects of Annealing and Different Substrate Materials on Ohmic Contact Property of IGZO Films

2013 ◽  
Vol 423-426 ◽  
pp. 846-851
Author(s):  
Ji Feng Shi
Keyword(s):  
Electrical Properties ◽  
Ohmic Contact ◽  
Annealing Temperature ◽  
Optical And Electrical Properties ◽  
Glass Substrates ◽  
Contact Property ◽  
Suitable Temperature ◽  
Contact Characteristic ◽  
Amorphous Ingazno ◽  
Better Than

Amorphous InGaZnO(a-IGZO) films were deposited on the glass substrates with Al/Mo/ITO films separately using magnetron sputtering and photograph methods,to form resistance structures between a-IGZO films and Al/Mo/ITO films.These samples were annealed in the air and N2 ambience in a series of temperature separately.The results show that regardless of N2 or air ambience,samples annealing at 250 degrade,IGZO films show a good ohmic contact characteristic withAl/Mo/ITOmaterials.And,IGZO films have a better ohmic contact characteristic with ITO/Al than Mo. The transmittance of the IGZO films annealed is better than the transmittance of samples without annealing.And ,the transmittance of samples annealed is rising with the increasing of annealing temperature. Considering the optical and electrical properties of IGZO films, we suggest that 250 centi degrades is a suitable temperature for annealing.

Effect of surface preparation on Ni Ohmic contact to 3C-SiC

2002 ◽  
Vol 46 (12) ◽  
pp. 2273-2279 ◽  
Author(s):  
Jae Il Noh ◽  
Kee Suk Nahm ◽  
Kwang Chul Kim ◽  
Michael A Capano
Keyword(s):  
Ohmic Contact ◽  
Surface Preparation ◽  
Effect Of Surface

Mechanism of Au-GaAs Reaction and Effects on Ohmic Formation

1988 ◽  
Vol 144 ◽  
Author(s):  
L. Lu-Min Yeh ◽  
P. H. Holloway
Keyword(s):  
Activation Energy ◽  
Electrical Properties ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Annealing Temperature ◽  
Kcal Mole ◽  
Au Film ◽  
Size Evolution ◽  
Long Time ◽  
Ohmic Contact Formation

ABSTRACTReactions between Au and GaAs occurs during alloying of Au-based ohmic contacts on GaAs. The reaction and electrical properties of annealed Au/GaAs contacts have both been studied. The extent of the Au-GaAs reactions increased with annealing temperature, incorporated Ga and As into the Au film and left pits on the GaAs surface. The activation energy for these reactions was determined to be 17.6 kcal/mole. Analysis of size evolution of reaction pits on GaAs proved that GaAs regrows at long time annealing. A mixed GaAs dissolution-regrowth mechanism is proposed for annealing temperature and time similar to those used to form alloyed ohmic contacts. Increased surface carrier concentrations resulting from accumulation of dopants near the Au/GaAs interface is proposed to enhance ohmic contact formation.

Characterization of Sputtered Ge Film

1994 ◽  
Vol 343 ◽  
Author(s):  
Jaeshin Cho ◽  
N. David Theodore
Keyword(s):  
Electrical Resistivity ◽  
Contact Resistance ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Amorphous Structure ◽  
Sharp Transition ◽  
Germanium Film ◽  
Contact Property ◽  
Anneal Temperature

ABSTRACTThe electrical resistivity and microstructure of sputtered germanium film were characterized as a function of anneal temperature from 400 to 700°C. The as-deposited sputtered Ge film had an amorphous structure with resistivity of 165 Ω-cm which was maintained after annealing up to 540°C. After annealing above 550°C, the resistivity dropped by almost four orders of magnitude to ∼0.027 Ω-cm. The sharp transition of resistivity at 550°C is believed to be due to the recrystallization of Ge film from the as-deposited amorphous structure. The ohmic contact property on Ge films was also evaluated using sputtered tungsten. Low resistance ohmic contacts were obtained both on as-deposited and annealed Ge films, with typical ohmic contact resistance of 0.05 ± 0.008 Ω-mm on annealed Ge films. The W contacts were thermally stable after annealing up to 650°C.

Properties of Al Ohmic Contacts to n-type 4H-SiC Employing a Phosphorus-Doped and Crystallized Amorphous-Silicon Interlayer

2014 ◽  
Vol 778-780 ◽  
pp. 649-652 ◽  
Author(s):  
Hiroaki Hanafusa ◽  
Akio Ohta ◽  
Ryuuhei Ashihara ◽  
Keisuke Maruyama ◽  
Tsubasa Mizuno ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Contact Resistivity ◽  
Spectroscopy Analysis ◽  
X Ray ◽  
Conduction Band Offset ◽  
Contact Property ◽  
Phosphorus Doped ◽  
Sic Wafer

Contact property of aluminum and 4H-SiC wafer with crystallized amorphous-silicon (a-Si) interlayer was investigated. A phosphorus-doped a-Si layer on SiC wafer was crystallized by annealing at 1377 °C. Good ohmic contact behavior and contact resistivity of 2.1 × 10-6Ωcm2were obtained without silicidation annealing process. Furthermore, non-doped crystallized a-Si layer insertion layer also showed ohmic contact property. However, high contact resistivity of 8.2×10-4Ωcm2was obtained in the non-doped a-Si sample. X-ray photo-electron spectroscopy analysis suggests that conduction band offset is significantly reduced between crystallized a-Si and SiC wafer. Therefore, a-Si insertion layer is effective for Schottky barrier height decreasing and high doping into Si layer forms low contact resistivity between Al and SiC, indirectly.

Investigation of the p-GaN Ohmic Contact Property by Using a Synchrotron Radiation Analysis

2007 ◽  
Vol 50 (6) ◽  
pp. 1894
Author(s):  
T. H. Kim ◽  
J. H. Boo ◽  
M. H. Joo ◽  
J. W. Lee ◽  
K. H. Park ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Ohmic Contact ◽  
Contact Property

EELS characterization of “Smut” layer films on steel surface prepared for chrome plating by anodic etching

1995 ◽  
Vol 53 ◽  
pp. 538-539
Author(s):  
E Y. Wang ◽  
J. T. Cherian ◽  
A. Madsen ◽  
R. M. Fisher
Keyword(s):  
Steel Surface ◽  
Surface Preparation ◽  
Treatment Method ◽  
Chrome Plating ◽  
Transmission Electron ◽  
Alloy Steels ◽  
Pre Treatment ◽  
Hard Chrome ◽  
Electron Energy Loss

Many steel parts are electro-plated with chromium to protect them against corrosion and to improve their wear-resistance. Good adhesion of the chrome plate to the steel surface, which is essential for long term durability of the part, is extremely dependent on surface preparation prior to plating. Recently, McDonnell Douglas developed a new pre-treatment method for chrome plating in which the steel is anodically etched in a sulfuric acid and hydrofluoric acid solution. On carbon steel surfaces, this anodic pre-treatment produces a dark, loosely adhering material that is commonly called the “smut” layer. On stainless steels and nickel alloys, the surface is only darkened by the anodic pre-treatment and little residue is produced. Anodic pre-treatment prior to hard chrome plating results in much better adherence to both carbon and alloy steels.We have characterized the anodic pre-treated steel surface and the resulting “smut” layer using various techniques including electron spectroscopy for chemical analysis (ESCA) on bulk samples and transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS) on stripped films.

Microstructural Characterization of Au-Ge-Ni based ohmic contacts to GaAs/AlGaAs modfet device

1987 ◽  
Vol 45 ◽  
pp. 326-327
Author(s):  
A.K. Rai ◽  
A.K. Petford-Long ◽  
A. Ezis ◽  
D.W. Langer
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Microstructural Characterization ◽  
Almost Everywhere ◽  
Spacer Layer ◽  
Good Contact ◽  
The Relationship ◽  
Lower Contact

Considerable amount of work has been done in studying the relationship between the contact resistance and the microstructure of the Au-Ge-Ni based ohmic contacts to n-GaAs. It has been found that the lower contact resistivity is due to the presence of Ge rich and Au free regions (good contact area) in contact with GaAs. Thus in order to obtain an ohmic contact with lower contact resistance one should obtain a uniformly alloyed region of good contact areas almost everywhere. This can possibly be accomplished by utilizing various alloying schemes. In this work microstructural characterization, employing TEM techniques, of the sequentially deposited Au-Ge-Ni based ohmic contact to the MODFET device is presented.The substrate used in the present work consists of 1 μm thick buffer layer of GaAs grown on a semi-insulating GaAs substrate followed by a 25 Å spacer layer of undoped AlGaAs.

Sign in / Sign up

Export Citation Format

Share Document