Solution Growth and Performance of CH$lt;inf$gt;3$lt;/inf$gt;NH$lt;inf$gt;3$lt;/inf$gt;PbCl$lt;inf$gt;3$lt;/inf$gt; Single Crystal

2016 ◽  
Vol 31 (10) ◽  
pp. 1063 ◽  
Author(s):  
WANG Wan-Fu ◽  
SU Jing ◽  
LEI Yong ◽  
ZHONG Kun ◽  
WANG Di
Keyword(s):  
Single Crystal ◽  
Solution Growth ◽  
And Performance

Solution Growth and Performance Study of Cs2 AgBiBr6 Single Crystal

2020 ◽  
Vol 55 (3) ◽  
pp. 1900222 ◽  
Author(s):  
Jing Su ◽  
Yi-qiang Huang ◽  
Han Chen ◽  
Jing Huang
Keyword(s):  
Single Crystal ◽  
Solution Growth ◽  
Performance Study ◽  
And Performance

Investigations on key aspects of solution growth l-Alanine strontium chloride trihydrate single crystal for non-linear optical and photonic applications

2020 ◽  
Vol 319 ◽  
pp. 114010
Author(s):  
Shish Pal Rathee ◽  
Dharamvir Singh Ahlawat ◽  
S.A. Martin Britto Dhas ◽  
K.K. Mauray ◽  
Budhendra Singh ◽  
...  
Keyword(s):  
Single Crystal ◽  
Solution Growth ◽  
Strontium Chloride ◽  
Non Linear ◽  
Linear Optical ◽  
Key Aspects ◽  
Chloride Trihydrate

Growth of Large Diameter 4H-SiC by TSSG Technique

2013 ◽  
Vol 740-742 ◽  
pp. 65-68 ◽  
Author(s):  
Kazuhiko Kusunoki ◽  
N. Yashiro ◽  
Nobuhiro Okada ◽  
Kouji Moriguchi ◽  
Kazuhito Kamei ◽  
...  
Keyword(s):  
Growth Rate ◽  
Fluid Flow ◽  
Single Crystal ◽  
Large Diameter ◽  
High Growth ◽  
High Growth Rate ◽  
Solution Growth ◽  
Morphological Stability ◽  
Control Member ◽  
Top Seeded Solution Growth

4H-SiC single crystal with 3-inch diameter was grown by top seeded solution growth (TSSG) technique. We used a new convection control member called “Immersion Guide (IG)” which causes the high and homogenous fluid flow in the solution. As a result, we achieved relatively high growth rate and morphological stability

scholarly journals Flux Single Crystal Growth of BaFe12−xTixO19 with Titanium Gradient

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 264
Author(s):  
Vladimir E. Zhivulin ◽  
Evgeny A. Trofimov ◽  
Olga V. Zaitseva ◽  
Dmitry A. Zherebtsov ◽  
Danil A. Uchaev ◽  
...  
Keyword(s):  
Single Crystal ◽  
Barium Hexaferrite ◽  
Solution Growth ◽  
Controlled Cooling ◽  
Substitution Level ◽  
Growth Method ◽  
Ti Substitution ◽  
Relationship Of ◽  
Top Seeded Solution Growth ◽  
The Relationship

Titanium substituted barium hexaferrite BaFe12−xTixO19 single crystal was grown by the top seeded solution growth method from flux on the seed with controlled cooling below 1175 °C. Titanium substitution level gradient in the single crystal in the vertical and horizontal directions was studied. Two planes were cut and polished. A justification for the linear gradient of Ti substitution in a BaFe12−xTixO19 single crystal is proposed; substitution levels in the center and periphery were determined. It was shown that upon growth by the top seeded solution growth method, crystals with a linear Ti substitution level gradient from x = 0.73 to x = 0.77 for a distance of 11 mm along pulling direction were obtained. The study led to the conclusion about the relationship of the gradient and changes in the composition of the nutrient solution.

Growth and investigation of novel nonlinear optical single crystal of urea potassium dichromate by solution growth technique for photonic application

2020 ◽  
Vol 49 (2) ◽  
pp. 181-186 ◽  
Author(s):  
V. Chithambaram ◽  
T. S. Franklin Rajesh ◽  
Geetha Palani ◽  
E. Ilango ◽  
B. Deepanraj ◽  
...  
Keyword(s):  
Single Crystal ◽  
Nonlinear Optical ◽  
Potassium Dichromate ◽  
Solution Growth ◽  
Growth Technique ◽  
Solution Growth Technique

In-plane Molecular Alignment in Thin Films of Pentacene Grown by Solution Casting and Performance of Thin Film Transistors

2007 ◽  
Vol 1003 ◽  
Author(s):  
Takashi Minakata ◽  
Yutaka Nastume
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Crystalline Structure ◽  
Grazing Incidence ◽  
Growth Direction ◽  
Molecular Alignment ◽  
Patterned Substrate ◽  
Polarized Microscopy ◽  
Transmission Electron ◽  
And Performance

AbstractWe have fabricated solution-processed thin films of pentacene by casting solution on a substrate and vaporizing solvent. The films with large oriented platelet domains were obtained by directionally grown condition. Molecular alignment in the directionally grown grains has been studied by several kinds of structural analysis. Oriented domains with the width of several hundreds microns and the length in an order of cm of the films were confirmed by polarized microscopy. In-plane crystalline structure of the domain has been studied by grazing incidence X-ray diffraction (GIXD) and strong anisotropy of in-plane crystalline structure was confirmed. Crystalline growth direction of the film was determined to be b-axis from both transmission electron diffraction and GIXD. Thin films transistors (TFTs) with directionally oriented domains of the films were fabricated on electrode patterned substrate. The observed maximum carrier mobility of 2.7 cm2/Vs was comparable to that of single crystal, which indicated that the quality of the film was almost identical with the single crystal. Correlation between FET performance and growth direction was studied and preferred performance of TFTs with the film grown perpendicularly to the channel was observed.

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