scholarly journals Polymer Composites with Improved Dielectric Properties: A Review

2021 ◽  
Vol 66 (2) ◽  
pp. 166
Author(s):  
B. Ghule ◽  
M. Laad

Materials exhibiting high dielectric constant (k) values find applications in capacitors, gate dielectrics, dielectric elastomers, energy storage device, while materials with low dielectric constant are required in electronic packaging and other such applications. Traditionally, high k value materials are associated with high dielectric losses, frequency-dependent dielectric behavior, and high loading of a filler. Materials with low k possess a low thermal conductivity. This creates the new challenges in the development of dielectric materials in both kinds of applications. Use of high dielectric constant filler materials increases the dielectric constant. In this study,the factors affecting the dielectric constant and the dielectric strength of polymer composites are explored. The present work aims to study the effect of various parameters affecting the dielectric properties of the materials. The factors selected in this study are the type of a polymer, type of a filler material used, size, shape, loading level and surface modification of a filler material, and method of preparation of the polymer composites. The study is focused on the dielectric enhancement of polymer nanocomposites used in the field of energy storage devices. The results show that the core-shell structured approach for high dielectric constant materials incorporated in a polymer matrix improves the dielectric constant of the polymer composite.

2007 ◽  
Vol 19 (10) ◽  
pp. 1369-1372 ◽  
Author(s):  
M. Arbatti ◽  
X. Shan ◽  
Z.-Y. Cheng

2019 ◽  
Vol 115 (16) ◽  
pp. 163901 ◽  
Author(s):  
Chao Wu ◽  
Zongze Li ◽  
Gregory M. Treich ◽  
Mattewos Tefferi ◽  
Riccardo Casalini ◽  
...  

2019 ◽  
Vol 5 (5) ◽  
pp. eaau9785 ◽  
Author(s):  
Sandhya Susarla ◽  
Thierry Tsafack ◽  
Peter Samora Owuor ◽  
Anand B. Puthirath ◽  
Jordan A. Hachtel ◽  
...  

Upcoming advancements in flexible technology require mechanically compliant dielectric materials. Current dielectrics have either high dielectric constant, K (e.g., metal oxides) or good flexibility (e.g., polymers). Here, we achieve a golden mean of these properties and obtain a lightweight, viscoelastic, high-K dielectric material by combining two nonpolar, brittle constituents, namely, sulfur (S) and selenium (Se). This S-Se alloy retains polymer-like mechanical flexibility along with a dielectric strength (40 kV/mm) and a high dielectric constant (K = 74 at 1 MHz) similar to those of established metal oxides. Our theoretical model suggests that the principal reason is the strong dipole moment generated due to the unique structural orientation between S and Se atoms. The S-Se alloys can bridge the chasm between mechanically soft and high-K dielectric materials toward several flexible device applications.


2012 ◽  
Vol 496 ◽  
pp. 263-267
Author(s):  
Rui Li ◽  
Jian Zhong Pei ◽  
Yan Wei Li ◽  
Xin Shi ◽  
Qun Le Du

A novel all-polymeric material with high dielectric constant (k) has been developed by blending poly (vinylidene fluoride) (PVDF) with polyamide-6 (PA6). The dependence of the dielectric properties on frequency and polymer volume fraction was investigated. When the volume fraction of PA6 is 20%, the dielectric property is better than others. The SEM investigations suggest that the enhanced dielectric behavior originates from significant interfacial interactions of polymer-polymer. The XRD demonstrate that the PA6 and PVDF affect the crystalline behavior of each component. Furthermore, the stable dielectric constants of the blends could be tuned by adjusting the content of the polymers. The created high-k all-polymeric blends represent a novel type of material that are simple technology and easy to process, and is of relatively high dielectric constant, applications as flexible electronics.


2013 ◽  
Vol 802 ◽  
pp. 134-138 ◽  
Author(s):  
Worawut Makcharoen

The CaCu3Ti4O12(CCTO) has the advantage for the various applications especially for capacitive elements in microelectronic devices over the ferroelectric materials including BaTiO3. CCTO is a ceramic compound with a high dielectric constant but it has a high loss tangent at room temperature. In this work, the Influences of PtO2doping on the dielectric properties of CaCu3Ti4O12(CCTO) ceramics were investigate. The ceramics CCTO and PtO2doping CCTO were studied by X- ray diffraction, scanning electron microscopy. The dielectric properties have been measured as a function of temperature and frequency range 0.1 - 500 kHz. The XRD shows the CCTO structure does not changes after doping with platinum. The results show that PtO2doped can reduce the mean grain sizes of CCTO, but the dielectric constant still remained a height. The samples of 2.0 mol% Pt-doped have exhibited high dielectric constant of about 22,000 and the loss tangent about 0.7 at room temperature and frequency at 10 kHz. The reduced of the loss tangent could be interpreted with the internal barrier layer capacitor model (IBLC)


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