scholarly journals Ellipsometric Diagnostics of a Transient Surface Layer in Optical Glass

2019 ◽  
Vol 64 (5) ◽  
pp. 442 ◽  
Author(s):  
O. V. Makarenko ◽  
L. V. Poperenko ◽  
O. I. Zavalistyi ◽  
A. L. Yampolskiy

Optical properties of a transient layer with a broken structure that arises at the surface of optical glass at its treatment have been considered. Rather often, the surface of optical elements is considered to be perfect, although the actual inhomogeneous surface structure can have a significant effect for precision physical experiments or novel technological problems. Furthermore, the simulation of the surface layer structure and the corresponding optical characteristics, as well as the study of a possibility to determine those parameters from the results of optical researches, is also of theoretical interest, which is demonstrated in this work. Ellipsometric measurements of optical glass specimens with a broken surface layer are carried out. When modeling the angular dependences of the ellipsometric parameters tan ф and cos б, the near-surface specimen region is considered as a stack of 500 thin layers, and the matrix method of light reflection in this structure with regard for the interference phenomenon is used in calculations. Five models are tested for the optical profile of a nonuniform layer, whose parameters are fitted to achieve the minimum of the target function describing the discrepancy between the calculated and measured data. It is found that the theoretical models describe the optical properties of the specimens more accurately, if they make allowance for the inhomogeneous surface layer. Nevertheless, the solution of the inverse ellipsometric problem turns out ambiguous, so that additional measurements are required for the final choice of a model that would be adequate to the actual morphological structure of the broken layer to be made. However, the key advantage of the applied method consists in that it allows a direct registration of the optical response of the system.

2012 ◽  
Vol 76 (9) ◽  
pp. 995-998
Author(s):  
V. V. Privezentsev ◽  
M. V. Chukichev ◽  
R. V. Mironov ◽  
Yu. V. Krivenkov

Author(s):  
A. L. Yampolskiy ◽  
O. V. Makarenko

Investigating the Stokes vector of light reflected from the surface of the optical glass, the presence of an anisotropic surface layer was established. The phase difference between radiation p- and s-components is revealed, which varies depending on the angle of incidence. This shows a weak anisotropy. Assuming that the anisotropic layer has an increased refractive index due to its chemical-mechanical treatment, it can be considered as some near-surface weakly guiding gradient burried waveguide. The possibility of coming radiation into such a planar waveguide using a coupling total reflection prism was investigated. The inspection showed a violation of the total internal reflection, unequal for p- and s-polarizations, which confirms the presence of the subsurface layer and its anisotropy. The absorption of radiation, which could be compared with the excitation of modes, is small. This is due to the properties of the prism material. Also, higher order modes are absorbed better. There is no significant angular dependence of the polarization degree of the output beam; however, it is higher in the case of s-polarization.


Author(s):  
Lev Mikhailovich Babkov ◽  
◽  
T. V. Bezrodna ◽  
G. A. Puchkovska ◽  
Kirill Evgen'evich Uspenskiy ◽  
...  

2007 ◽  
Author(s):  
Lev. M. Babkov ◽  
Tamara V. Bezrodnaya ◽  
Galina A. Puchkovskaya ◽  
Valentina V. Shimanovskaya ◽  
Kirill E. Uspenskiy

2013 ◽  
Vol 58 (2) ◽  
pp. 142-150 ◽  
Author(s):  
A.V. Sachenko ◽  
◽  
V.P. Kostylev ◽  
V.G. Litovchenko ◽  
V.G. Popov ◽  
...  

1997 ◽  
Vol 469 ◽  
Author(s):  
V. C. Venezia ◽  
T. E. Haynes ◽  
A. Agarwal ◽  
H. -J. Gossmann ◽  
D. J. Eaglesham

ABSTRACTThe diffusion of Sb and B markers has been studied in vacancy supersaturations produced by MeV Si implantation in float zone (FZ) silicon and bonded etch-back silicon-on-insulator (BESOI) substrates. MeV Si implantation produces a vacancy supersaturated near-surface region and an interstitial-rich region at the projected ion range. Transient enhanced diffusion (TED) of Sb in the near surface layer was observed as a result of a 2 MeV Si+, 1×1016/cm2, implant. A 4× larger TED of Sb was observed in BESOI than in FZ silicon, demonstrating that the vacancy supersaturation persists longer in BESOI than in FZ. B markers in samples with MeV Si implant showed a factor of 10× smaller diffusion relative to markers without the MeV Si+ implant. This data demonstrates that a 2 MeV Si+ implant injects vacancies into the near surface region.


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