scholarly journals Activity of domain walls of epitaxial ferrite-garnet films caused by external electric fields

2015 ◽  
Vol 22 (4) ◽  
pp. 482-486
Author(s):  
V.E. Koronovskyy ◽  
Keyword(s):  
Electric Fields ◽  
Domain Walls ◽  
Ferrite Garnet ◽  
External Electric Fields ◽  
Garnet Films

Domain walls quasistatics in ferrite-garnet films

1995 ◽  
Vol 147 (3) ◽  
pp. 417-420
Author(s):  
E.B. Krotenko ◽  
Yu.A. Kuzin ◽  
Yu.V. Melikhov ◽  
A.M. Redchenko ◽  
F.G. Baryakhtar
Keyword(s):  
Domain Walls ◽  
Ferrite Garnet ◽  
Garnet Films

scholarly journals Emulsions in external electric fields

2021 ◽  
pp. 102455
Author(s):  
Johan Sjöblom ◽  
Sameer Mhatre ◽  
Sébastien Simon ◽  
Roar Skartlien ◽  
Geir Sørland
Keyword(s):  
Electric Fields ◽  
External Electric Fields

scholarly journals Vacancy tuned thermoelectric properties and high spin filtering performance in graphene/silicene heterostructures

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Zainab Gholami ◽  
Farhad Khoeini
Keyword(s):  
Electric Fields ◽  
High Spin ◽  
High Efficiency ◽  
Practical Applications ◽  
External Electric Fields ◽  
Ferromagnetic Exchange ◽  
High Spin Polarization ◽  
Filtering Effect ◽  
Spin Switching ◽  
Spin Filtering

AbstractThe main contribution of this paper is to study the spin caloritronic effects in defected graphene/silicene nanoribbon (GSNR) junctions. Each step-like GSNR is subjected to the ferromagnetic exchange and local external electric fields, and their responses are determined using the nonequilibrium Green’s function (NEGF) approach. To further study the thermoelectric (TE) properties of the GSNRs, three defect arrangements of divacancies (DVs) are also considered for a larger system, and their responses are re-evaluated. The results demonstrate that the defected GSNRs with the DVs can provide an almost perfect thermal spin filtering effect (SFE), and spin switching. A negative differential thermoelectric resistance (NDTR) effect and high spin polarization efficiency (SPE) larger than 99.99% are obtained. The system with the DV defects can show a large spin-dependent Seebeck coefficient, equal to Ss ⁓ 1.2 mV/K, which is relatively large and acceptable. Appropriate thermal and electronic properties of the GSNRs can also be obtained by tuning up the DV orientation in the device region. Accordingly, the step-like GSNRs can be employed to produce high efficiency spin caloritronic devices with various features in practical applications.

scholarly journals Cisplatin under oriented external electric fields: A deeper insight into electrochemotherapy at the molecular level

2020 ◽  
Author(s):  
Li Zhang ◽  
Ya‐Ling Ye ◽  
Xiao‐Ling Zhang ◽  
Xiang‐Hui Li ◽  
Qiao‐Hong Chen ◽  
...  
Keyword(s):  
Electric Fields ◽  
Molecular Level ◽  
External Electric Fields ◽  
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