PHYSICOCHEMICAL ASPECTS OF THE FORMATION OF ALN CRYSTAL FILM ON THE (0001)AL2O3 SURFACE

2019 ◽  
Keyword(s):  
Crystal Film

Hole Formation in Gold Films

1972 ◽  
Vol 30 ◽  
pp. 510-511
Author(s):  
R. W. Vook ◽  
R. Cook ◽  
R. Ziemer
Keyword(s):  
Deposition Rate ◽  
Quartz Crystal ◽  
Evaporation Rate ◽  
Gold Films ◽  
Hole Density ◽  
Hole Formation ◽  
Microscope Slide ◽  
Crystal Film ◽  
Glass Microscope Slide ◽  
Glass Microscope

During recent experiments on Au films, a qualitative correlation between hole formation and deposition rate was observed. These early studies were concerned with films 80 to 1000A thick deposited on glass at -185°C and annealed at 170°C. In the present studies this earlier work was made quantitative. Deposition rates varying between 5 and 700 A/min were used. The effects of deposition rate on hole density for two films 300 and 700A thick were investigated.Au was evaporated from an outgassed W filament located 10 cm from a glass microscope slide substrate and a quartz crystal film thickness monitor. A shutter separating the filament from the substrate and monitor made it possible to obtain a constant evaporation rate before initiating deposition. The pressure was reduced to less than 1 x 10-6 torr prior to cooling the substrate with liquid nitrogen. The substrate was cooled in 15 minutes during which the pressure continued to drop to the mid 10-7 torr range, where deposition was begun.

Self-Assembly Optical Components

2003 ◽  
Vol 771 ◽  
Author(s):  
Pavel I. Lazarev ◽  
Michael V. Paukshto ◽  
Elena N. Sidorenko
Keyword(s):  
Optical Properties ◽  
Self Assembly ◽  
Crystalline State ◽  
Liquid Crystalline ◽  
Film Deposition ◽  
X Ray Diffraction ◽  
Optical Components ◽  
Crystal Film ◽  
Solid Film ◽  
Thin Crystal

AbstractWe report a new method of Thin Crystal Film deposition. In the present paper we describe the method of crystallization, structure, and optical properties of Bisbenzimidazo[2,1-a:1',2',b']anthra[2,1,9-def:6,5,10-d'e'f']-diisoquinoline-6,9-dion (mixture with cis-isomer) (abbreviated DBI PTCA) sulfonation product. The Thin Crystal Film has a thickness of 200-1000 nm, with anisotropic optical properties such as refraction and absorption indices. X-ray diffraction data evidences a lyotropic liquid crystalline state in liquid phase and crystalline state in solid film. Anisotropic optical properties of the film make it useful in optical devices, e.g. liquid crystal displays.

Development of reverse dispersion liquid crystal film to improve “halo” of high‐dynamic‐range LCDs

2021 ◽  
Author(s):  
Tatsuya Iwasaki ◽  
Yuki Nakamura ◽  
Toshikazu Sumi ◽  
Katsufumi Ohmuro ◽  
Masaaki Suzuki ◽  
...  
Keyword(s):  
Liquid Crystal ◽  
Dynamic Range ◽  
High Dynamic Range ◽  
Crystal Film ◽  
High Dynamic

47‐5: Distinguished Paper: Development of Reversed‐Dispersion Liquid‐Crystal Film to Improve the Display Quality of HDR‐IPS Panels

2021 ◽  
Vol 52 (1) ◽  
pp. 650-653
Author(s):  
Tatsuya Iwasaki ◽  
Yuki Nakamura ◽  
Toshikazu Sumi ◽  
Katsufumi Ohmuro ◽  
Masaaki Suzuki ◽  
...  
Keyword(s):  
Liquid Crystal ◽  
Crystal Film ◽  
Display Quality

Synthesis of Crystallized TiNi Films by Ion Irradiation

2012 ◽  
Vol 78 ◽  
pp. 87-91
Author(s):  
Noriaki Ikenaga ◽  
Yoichi Kishi ◽  
Zenjiro Yajima ◽  
Noriyuki Sakudo
Keyword(s):  
Shape Memory ◽  
Crystallization Temperature ◽  
Ion Irradiation ◽  
Deposition Process ◽  
Plasma Potential ◽  
Micro Electro Mechanical Systems ◽  
Ion Energy ◽  
Crystal Film ◽  
Irradiation Energy ◽  
New Apparatus

TiNi is well known as a typical shape-memory alloy, and is expected to be a promising material for micro actuators. In order to realize micro electro mechanical systems (MEMS) with this material, we have to get thin crystal film of the material, since the shape-memory property appears only when the structure is crystalline. In our previous studies we developed a new apparatus as well as a new deposition process for lowering the crystallization temperature by using ion irradiation. In addition, we have found that the deposited film by the process can be crystallized at very low temperature (below 473 K) without annealing but with simultaneous irradiation of Ar ions during sputter-deposition. In this study, we aim for the realization of crystallized TiNi film, which is deposited on Si substrate below 373 K substrate temperature. In order to realization the purpose, we have revealed the effect of Ar ion energy on lowering the crystallization temperature. The ion energy is measured with a quadrupole mass spectrometer (QMS) having an ion energy analyzer. The deposited TiNi films are examined with an X-ray diffraction (XRD). We found the plasma potential against the reactor chamber is important to be considered in the ion irradiation energy. The effects of ion energy for the crystallization of TiNi film are discussed.

Polarization controllable spatial filter based on azo-dye-doped liquid-crystal film

2005 ◽  
Vol 30 (11) ◽  
pp. 1390 ◽  
Author(s):  
Tsung-Hsien Lin ◽  
Andy Y.-G. Fuh
Keyword(s):  
Liquid Crystal ◽  
Azo Dye ◽  
Spatial Filter ◽  
Crystal Film
Sign in / Sign up

Export Citation Format

Share Document