FIRST HIGH RESOLUTION IR SPECTRA OF 2-13C-PROPANE. THE ν9 B-TYPE BAND NEAR 366.767 cm−1AND THE ν26 C-TYPE BAND NEAR 746.615 cm−1. DETERMINATION OF GROUND AND UPPER STATE CONSTANTS.

2017 ◽  
Author(s):  
S.J. Daunt ◽  
Brant Billinghurst ◽  
Jean-Marie Flaud ◽  
Walter Lafferty ◽  
Robert Grzywacz
Keyword(s):  
High Resolution ◽  
Ir Spectra ◽  
Type Band

FIRST HIGH RESOLUTION IR SPECTRA OF 2-D1-PROPANE. THE ν9 (A1) B-TYPE BAND NEAR 367.2389 cm−1.

2018 ◽  
Author(s):  
Stephen Daunt ◽  
Brant Billinghurst ◽  
Jean-Marie Flaud ◽  
Walter Lafferty ◽  
Robert Grzywacz
Keyword(s):  
High Resolution ◽  
Ir Spectra ◽  
Type Band

ChemInform Abstract: Determination of A0 and DK0 for Allene from High-Resolution IR Spectra.

ChemInform ◽  
1990 ◽  
Vol 21 (40) ◽  
Author(s):  
F. HEGELUND ◽  
R. ANTTILA ◽  
S. ALANKO
Keyword(s):  
High Resolution ◽  
Ir Spectra

ChemInform Abstract: Millimeterwave and High-Resolution IR Spectra of OCSe: Determination of Its Structure.

ChemInform ◽  
2010 ◽  
Vol 24 (20) ◽  
pp. no-no
Author(s):  
M. LEGUENNEC ◽  
G. WLODARCZAK ◽  
J. DEMAISON ◽  
H. BUERGER ◽  
M. LITZ ◽  
...  
Keyword(s):  
High Resolution ◽  
Ir Spectra

High-resolution microscopy of twin boundaries in gold

1987 ◽  
Vol 45 ◽  
pp. 260-261
Author(s):  
William Krakow ◽  
David A. Smith
Keyword(s):  
High Resolution ◽  
Specimen Preparation ◽  
Gold Films ◽  
Boundary Area ◽  
Transmission Electron ◽  
Recent Developments ◽  
Tilt Boundaries ◽  
High Resolution Microscopy ◽  
Twist Boundaries

Recent developments in specimen preparation, imaging and image analysis together permit the experimental determination of the atomic structure of certain, simple grain boundaries in metals such as gold. Single crystal, ∼125Å thick, (110) oriented gold films are vapor deposited onto ∼3000Å of epitaxial silver on (110) oriented cut and polished rock salt substrates. Bicrystal gold films are then made by first removing the silver coated substrate and placing in contact two suitably misoriented pieces of the gold film on a gold grid. Controlled heating in a hot stage first produces twist boundaries which then migrate, so reducing the grain boundary area, to give mixed boundaries and finally tilt boundaries perpendicular to the foil. These specimens are well suited to investigation by high resolution transmission electron microscopy.

High-Resolution Image Simulation of a Tilted Crystal

1990 ◽  
Vol 48 (1) ◽  
pp. 68-69
Author(s):  
C. J. D. Hetherington
Keyword(s):  
High Resolution ◽  
Crystal Thickness ◽  
Thin Specimen ◽  
Atomic Structures ◽  
Kikuchi Lines ◽  
High Resolution Images ◽  
Final Estimate ◽  
Simulated Images ◽  
Habit Planes

Most high resolution images are not directly interpretable but must be compared with simulations based on model atomic structures and appropriate imaging conditions. Typically, the only parameters that are adjusted, in addition to the structure models, are crystal thickness and microscope defocus. Small tilts of the crystal away from the exact zone axis have only rarely been considered. It is shown here that, in the analysis of an image of a silicon twin intersection, the crystal tilt could be accurately estimated and satisfactorily included in the simulations.The micrograph shown in figure 1 was taken as part of an HREM study of indentation-induced hexagonal silicon. In this instance, the intersection of two twins on different habit planes has driven the silicon into hexagonal stacking. However, in order to confirm this observation, and in order to investigate other defects in the region, it has been necessary to simulate the image taking into account the very apparent crystal tilt. The inability to orientate the specimen at the exact [110] zone was influenced by i) the buckling of the specimen caused by strains at twin intersections, ii) the absence of Kikuchi lines or a clearly visible Laue circle in the diffraction pattern of the thin specimen and iii) the avoidance of radiation damage (which had marked effects on images taken a few minutes later following attempts to realign the crystal.) The direction of the crystal tilt was estimated by observing which of the {111} planes remained close to edge-on to the beam and hence strongly imaged. Further refinement of the direction and magnitude of the tilt was done by comparing simulated images to experimental images in a through-focal series. The presence of three different orientations of the silicon lattice aided the unambiguous determination of the tilt. The final estimate of a 0.8° tilt in the 200Å thick specimen gives atomic columns a projected width of about 3Å.

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