scholarly journals The Development of a National Anthropometric Data Bank for Saudi Adults: The Initial Stage

2016 ◽  
Author(s):  
Moudi ALMOUSA
Keyword(s):  
Data Bank ◽  
Anthropometric Data ◽  
Initial Stage

An Anthropometric Data Bank: Its Hidden Dimensions

1982 ◽  
pp. 35-42
Author(s):  
John T. McConville ◽  
Charles E. Clauser
Keyword(s):  
Data Bank ◽  
Anthropometric Data

An anthropometric data bank for the Iranian working population with ethnic diversity

2015 ◽  
Vol 48 ◽  
pp. 95-103 ◽  
Author(s):  
Fatemeh Sadeghi ◽  
Adel Mazloumi ◽  
Zeinab Kazemi
Keyword(s):  
Ethnic Diversity ◽  
Data Bank ◽  
Working Population ◽  
Anthropometric Data

The AMRL Anthropometric Data Bank Library: Volumes 1-5

1977 ◽  
Author(s):  
Edmund Churchill ◽  
Thomas Churchill ◽  
Paul Kikta
Keyword(s):  
Data Bank ◽  
Anthropometric Data

Reaction couples of ceramic thin films prepared by CVD

1988 ◽  
Vol 46 ◽  
pp. 798-799
Author(s):  
D.W. Susnitzky ◽  
S.R. Summerfelt ◽  
C.B. Carter
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Solid State Reactions ◽  
Spatial Distributions ◽  
Diffusion Couples ◽  
Kinetics Studies ◽  
Ceramic Thin Films ◽  
Initial Stage

Solid-state reactions have traditionally been studied in the form of diffusion couples. This ‘bulk’ approach has been modified, for the specific case of the reaction between NiO and Al2O3, by growing NiAl2O4 (spinel) from electron-transparent Al2O3 TEM foils which had been exposed to NiO vapor at 1415°C. This latter ‘thin-film’ approach has been used to characterize the initial stage of spinel formation and to produce clean phase boundaries since further TEM preparation is not required after the reaction is completed. The present study demonstrates that chemical-vapor deposition (CVD) can be used to deposit NiO particles, with controlled size and spatial distributions, onto Al2O3 TEM specimens. Chemical reactions do not occur during the deposition process, since CVD is a relatively low-temperature technique, and thus the NiO-Al2O3 interface can be characterized. Moreover, a series of annealing treatments can be performed on the same sample which allows both Ni0-NiAl2O4 and NiAl2O4-Al2O3 interfaces to be characterized and which therefore makes this technique amenable to kinetics studies of thin-film reactions.

Decoration technique and surface physics

1978 ◽  
Vol 36 (1) ◽  
pp. 436-437 ◽  
Author(s):  
H. Bethge
Keyword(s):  
Diffusion Path ◽  
Special Importance ◽  
Surface Physics ◽  
Step Structure ◽  
Initial Stage ◽  
Special Cases ◽  
Atomic Surface ◽  
The Mean ◽  
Bulk Structure ◽  
Decoration Technique

Besides the atomic surface structure, diverging in special cases with respect to the bulk structure, the real structure of a surface Is determined by the step structure. Using the decoration technique /1/ it is possible to image step structures having step heights down to a single lattice plane distance electron-microscopically. For a number of problems the knowledge of the monatomic step structures is important, because numerous problems of surface physics are directly connected with processes taking place at these steps, e.g. crystal growth or evaporation, sorption and nucleatlon as initial stage of overgrowth of thin films.To demonstrate the decoration technique by means of evaporation of heavy metals Fig. 1 from our former investigations shows the monatomic step structure of an evaporated NaCI crystal. of special Importance Is the detection of the movement of steps during the growth or evaporation of a crystal. From the velocity of a step fundamental quantities for the molecular processes can be determined, e.g. the mean free diffusion path of molecules.

Nucleation and initial growth of Pd2Si crystals on Si(111)

1993 ◽  
Vol 51 ◽  
pp. 844-845
Author(s):  
Xianghong Tong ◽  
Oliver Pohland ◽  
J. Murray Gibson
Keyword(s):  
High Vacuum ◽  
Dark Field ◽  
Ultra High Vacuum ◽  
Initial Growth ◽  
Surface And Interface ◽  
Dark Field Imaging ◽  
Transmission Electron ◽  
Initial Stage ◽  
Effect Of Surface

The nucleation and initial stage of Pd2Si crystals on Si(111) surface is studied in situ using an Ultra-High Vacuum (UHV) Transmission Electron Microscope (TEM). A modified JEOL 200CX TEM is used for the study. The Si(111) sample is prepared by chemical thinning and is cleaned inside the UHV chamber with base pressure of 1x10−9 τ. A Pd film of 20 Å thick is deposited on to the Si(111) sample in situ using a built-in mini evaporator. This room temperature deposited Pd film is thermally annealed subsequently to form Pd2Si crystals. Surface sensitive dark field imaging is used for the study to reveal the effect of surface and interface steps.The initial growth of the Pd2Si has three stages: nucleation, growth of the nuclei and coalescence of the nuclei. Our experiments shows that the nucleation of the Pd2Si crystal occurs randomly and almost instantaneously on the terraces upon thermal annealing or electron irradiation.

Anisotropy of interfacial defects in the initial stage of MOVPE GaAs growth On Si

1990 ◽  
Vol 48 (4) ◽  
pp. 592-593
Author(s):  
C. Vannuffel ◽  
C. Schiller ◽  
J. P. Chevalier
Keyword(s):  
Early Stage ◽  
Threading Dislocations ◽  
Mbe Growth ◽  
Detailed Mechanism ◽  
Si Substrates ◽  
Initial Stage ◽  
Interfacial Defects ◽  
Interfacial Dislocations ◽  
Step Growth ◽  
Essential Problem

Recently, interest has focused on the epitaxy of GaAs on Si as a promising material for electronic applications, potentially for integration of optoelectronic devices on silicon wafers. The essential problem concerns the 4% misfit between the two materials, and this must be accommodated by a network of interfacial dislocations with the lowest number of threading dislocations. It is thus important to understand the detailed mechanism of the formation of this network, in order to eventually reduce the dislocation density at the top of the layers.MOVPE growth is carried out on slightly misoriented, (3.5°) from (001) towards , Si substrates. Here we report on the effect of this misorientation on the interfacial defects, at a very early stage of growth. Only the first stage, of the well-known two step growth process, is thus considered. Previously, we showed that full substrate coverage occured for GaAs thicknesses of 5 nm in contrast to MBE growth, where substantially greater thicknesses are required.

Responses to Two Weight-loss Programs Based on Approximating the Diet to the Ideal: Differences Associated with Increased Cereal or Vegetable Consumption

2006 ◽  
Vol 76 (6) ◽  
pp. 367-376 ◽  
Author(s):  
Ortega ◽  
Rodríguez-Rodríguez ◽  
Aparicio ◽  
Marín-Arias ◽  
López-Sobaler
Keyword(s):  
Weight Loss ◽  
Weight Control ◽  
Dietary Intervention ◽  
Vegetable Consumption ◽  
Healthy Eating Index ◽  
Anthropometric Data ◽  
Control Programs ◽  
Weight Loss Programs ◽  
Spanish Women ◽  
The Ideal

The fight against excess weight and obesity is a health priority. The aim of this study was to analyze the anthropometric changes induced by two weight control programs based on approximating the diet to the theoretical ideal (increasing the consumption of foods with the largest differences between the recommended and observed intakes: cereals and vegetables – for which a minimum of 6 and 3 servings/day are recommended, respectively). The study subjects were 57 Spanish women with a body-mass index (BMI) of 24–35 kg/m², all of whom were randomly assigned to one of two slightly hypocaloric diets for a six-week period: diet V, in which the consumption of greens and vegetables was increased, or diet C, in which the consumption of cereals was increased. Dietetic and anthropometric data were collected at the start of the study and again at two and six weeks. The dietary intervention approximated the subjects’ energy provision from proteins, fats, and carbohydrates to those recommended. The Healthy Eating Index (HEI) improved with both diets. Reductions in body weight, BMI, and the amount of body fat (kg) were also achieved with both diets. Weight loss was 1.56 ± 0.93 kg and 1.02 ± 0.55 kg at two weeks with diet C and V respectively, and 2.8 ± 1.4 kg and 2.0 ± 1.3 kg at six weeks (p < 0.05). Approximating the diet to the theoretical ideal by increasing the consumption of vegetables or cereals may therefore be of use in weight control. In terms of weight loss and the improvement of the diet quality (energy profile and HEI), diet C was significantly more effective than diet V.

Sign in / Sign up

Export Citation Format

Share Document