The Nature and Annealing Behavior of Irradiation Damage in Molybdenum

2009 ◽  
pp. 188-188-14
Author(s):  
B. L. Eyre ◽  
A. C. Roberts
Keyword(s):  
Irradiation Damage ◽  
Annealing Behavior

Total-dose irradiation damage and annealing behavior of Altera SRAM-based FPGA

2010 ◽  
Vol 22 (11) ◽  
pp. 2724-2728
Author(s):  
高博 Gao Bo ◽  
余学峰 Yu Xuefeng ◽  
任迪远 Ren Diyuan ◽  
王义元 Wang Yiyuan ◽  
李豫东 Li Yudong ◽  
...  
Keyword(s):  
Total Dose ◽  
Irradiation Damage ◽  
Annealing Behavior ◽  
Dose Irradiation

Annealing behavior of (Pu,Cm)O2 lattice and bulk expansion from self-irradiation damage

2011 ◽  
Vol 414 (2) ◽  
pp. 174-178 ◽  
Author(s):  
Masahide Takano ◽  
Mitsuo Akabori ◽  
Yasuo Arai
Keyword(s):  
Irradiation Damage ◽  
Annealing Behavior

Development of a conical anode Fe-gun for low voltage SEM

1988 ◽  
Vol 46 ◽  
pp. 978-979
Author(s):  
T. Miyokawa ◽  
S. Norioka ◽  
S. Goto
Keyword(s):  
High Resolution ◽  
Field Emission ◽  
Low Voltage ◽  
Irradiation Damage ◽  
Cold Cathode ◽  
Virtual Source ◽  
Source Position ◽  
Electrostatic Lens ◽  
Electrostatic Lenses ◽  
Wide Range

Field emission SEMs (FE-SEMs) are becoming popular due to their high resolution needs. In the field of semiconductor product, it is demanded to use the low accelerating voltage FE-SEM to avoid the electron irradiation damage and the electron charging up on samples. However the accelerating voltage of usual SEM with FE-gun is limited until 1 kV, which is not enough small for the present demands, because the virtual source goes far from the tip in lower accelerating voltages. This virtual source position depends on the shape of the electrostatic lens. So, we investigated several types of electrostatic lenses to be applicable to the lower accelerating voltage. In the result, it is found a field emission gun with a conical anode is effectively applied for a wide range of low accelerating voltages.A field emission gun usually consists of a field emission tip (cold cathode) and the Butler type electrostatic lens.

In situ irradiation effects studies in medium- and high-voltage TEM

1995 ◽  
Vol 53 ◽  
pp. 234-235
Author(s):  
Charles W. Allen
Keyword(s):  
Cross Section ◽  
Particle Flux ◽  
Threshold Value ◽  
High Energy ◽  
Irradiation Damage ◽  
Defect Complexes ◽  
Lattice Position ◽  
Electrons And Ions ◽  
The Masses

With respect to structural consequences within a material, energetic electrons, above a threshold value of energy characteristic of a particular material, produce vacancy-interstial pairs (Frenkel pairs) by displacement of individual atoms, as illustrated for several materials in Table 1. Ion projectiles produce cascades of Frenkel pairs. Such displacement cascades result from high energy primary knock-on atoms which produce many secondary defects. These defects rearrange to form a variety of defect complexes on the time scale of tens of picoseconds following the primary displacement. A convenient measure of the extent of irradiation damage, both for electrons and ions, is the number of displacements per atom (dpa). 1 dpa means, on average, each atom in the irradiated region of material has been displaced once from its original lattice position. Displacement rate (dpa/s) is proportional to particle flux (cm-2s-1), the proportionality factor being the “displacement cross-section” σD (cm2). The cross-section σD depends mainly on the masses of target and projectile and on the kinetic energy of the projectile particle.

Two-stage self-seeding method for preparation of single crystals of poly(phenylene sulfide)

1989 ◽  
Vol 47 ◽  
pp. 368-369
Author(s):  
Sengshiu Chung ◽  
Peggy Cebe
Keyword(s):  
Single Crystals ◽  
High Performance ◽  
Dilute Solution ◽  
Two Stage ◽  
Annealing Behavior ◽  
High Performance Polymers ◽  
Seeding Method ◽  
Phenylene Sulfide

We are studying the crystallization and annealing behavior of high performance polymers, like poly(p-pheny1ene sulfide) PPS, and poly-(etheretherketone), PEEK. Our purpose is to determine whether PPS, which is similar in many ways to PEEK, undergoes reorganization during annealing. In an effort to address the issue of reorganization, we are studying solution grown single crystals of PPS as model materials.Observation of solution grown PPS crystals has been reported. Even from dilute solution, embrionic spherulites and aggregates were formed. We observe that these morphologies result when solutions containing uncrystallized polymer are cooled. To obtain samples of uniform single crystals, we have used two-stage self seeding and solution replacement techniques.

High-Resolution Cryo-Electron Microscopy of Biological Macromolecules

1990 ◽  
Vol 48 (1) ◽  
pp. 126-127
Author(s):  
Yoshinori Fujiyoshi
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Diffraction Pattern ◽  
Superfluid Helium ◽  
Copper Phthalocyanine ◽  
Optical Diffraction ◽  
Irradiation Damage ◽  
Biological Macromolecules ◽  
Cross Sectional ◽  
Instrumental Resolution

The resolution of direct images of biological macromolecules is normally restricted to far less than 0.3 nm. This is not due instrumental resolution, but irradiation damage. The damage to biological macromolecules may expect to be reduced when they are cooled to a very low temperature. We started to develop a new cryo-stage for a high resolution electron microscopy in 1983, and successfully constructed a superfluid helium stage for a 400 kV microscope by 1986, whereby chlorinated copper-phthalocyanine could be photographed to a resolution of 0.26 nm at a stage temperature of 1.5 K. We are continuing to develop the cryo-microscope and have developed a cryo-microscope equipped with a superfluid helium stage and new cryo-transfer device.The New cryo-microscope achieves not only improved resolution but also increased operational ease. The construction of the new super-fluid helium stage is shown in Fig. 1, where the cross sectional structure is shown parallel to an electron beam path. The capacities of LN2 tank, LHe tank and the pot are 1400 ml, 1200 ml and 3 ml, respectively. Their surfaces are placed with gold to minimize thermal radiation. Consumption rates of liquid nitrogen and liquid helium are 170 ml/hour and 140 ml/hour, respectively. The working time of this stage is more than 7 hours starting from full LN2 and LHe tanks. Instrumental resolution of our cryo-stage cooled to 4.2 K was confirmed to be 0.20 nm by an optical diffraction pattern from the image of a chlorinated copper-phthalocyanine crystal. The image and the optical diffraction pattern are shown in Fig. 2 a, b, respectively.

Metastable Defects in the Amorphous Silicon-Germanium Alloys

2003 ◽  
Vol 762 ◽  
Author(s):  
J. David Cohen
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Dangling Bonds ◽  
Annealing Behavior ◽  
Fundamental Properties ◽  
Silicon Materials ◽  
Salient Features ◽  
The Individual ◽  
Amorphous Silicon Germanium ◽  
Silicon Germanium Alloys

AbstractThis paper first briefly reviews a few of the early studies that established some of the salient features of light-induced degradation in a-Si,Ge:H. In particular, I discuss the fact that both Si and Ge metastable dangling bonds are involved. I then review some of the recent studies carried out by members of my laboratory concerning the details of degradation in the low Ge fraction alloys utilizing the modulated photocurrent method to monitor the individual changes in the Si and Ge deep defects. By relating the metastable creation and annealing behavior of these two types of defects, new insights into the fundamental properties of metastable defects have been obtained for amorphous silicon materials in general. I will conclude with a brief discussion of the microscopic mechanisms that may be responsible.

A Study of Electron Beam Irradiation Influence on Device Contact Junction Characteristics of Advanced DRAM Using Atomic Force Probing

2013 ◽  
Author(s):  
Wei-Chih Wang ◽  
Jian-Shing Luo
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Forward Bias ◽  
Irradiation Damage ◽  
Beam Irradiation ◽  
Excess Current ◽  
Atomic Force ◽  
Order Of Magnitude ◽  
Voltage Contrast ◽  
Acceleration Voltage

Abstract In this paper, we revealed p+/n-well and n+/p-well junction characteristic changes caused by electron beam (EB) irradiation. Most importantly, we found a device contact side junction characteristic is relatively sensitive to EB irradiation than its whole device characteristic; an order of magnitude excess current appears at low forward bias region after 1kV EB acceleration voltage irradiation (Vacc). Furthermore, these changes were well interpreted by our Monte Carlo simulation results, the Shockley-Read Hall (SRH) model and the Generation-Recombination (G-R) center trap theory. In addition, four essential examining items were suggested and proposed for EB irradiation damage origins investigation and evaluation. Finally, by taking advantage of the excess current phenomenon, a scanning electron microscope (SEM) passive voltage contrast (PVC) fault localization application at n-FET region was also demonstrated.

Annealing Behavior with Thickness Hindered Nucleation in Small-Molecule Organic Semiconductor Thin Films

2019 ◽  
Vol 19 (7) ◽  
pp. 3777-3784
Author(s):  
Jakub Rozbořil ◽  
Katharina Broch ◽  
Roland Resel ◽  
Ondřej Caha ◽  
Filip Münz ◽  
...  
Keyword(s):  
Thin Films ◽  
Small Molecule ◽  
Organic Semiconductor ◽  
Annealing Behavior ◽  
Semiconductor Thin Films
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