Mechanical Properties of Cubic Silicon Carbide after Neutron Irradiation at Elevated Temperatures

2008 ◽  
pp. 365-365-13
Author(s):  
Y Katoh ◽  
LL Snead
Keyword(s):  
Mechanical Properties ◽  
Silicon Carbide ◽  
Neutron Irradiation ◽  
Elevated Temperatures ◽  
Cubic Silicon Carbide

On the Role of Grain-Boundary Films in Optimizing the Mechanical Properties of Silicon Carbide Ceramics

2004 ◽  
Vol 818 ◽  
Author(s):  
R. O. Ritchie ◽  
X.-F. Zhang ◽  
L. C. De Jonghe
Keyword(s):  
Electron Microscopy ◽  
Mechanical Properties ◽  
Fracture Toughness ◽  
Silicon Carbide ◽  
Grain Boundary ◽  
Elevated Temperatures ◽  
Boundary Structure ◽  
Intergranular Films ◽  
Grain Boundary Structure ◽  
Silicon Carbide Ceramics

AbstractThrough control of the grain-boundary structure, principally in the nature of the nanoscale intergranular films, a silicon carbide with a fracture toughness as high as 9.1 MPa.m1/2 has been developed by hot pressing β-SiC powder with aluminum, boron, and carbon additions (ABC-SiC). Central in this material development has been systematic transmission electron microscopy (TEM) and mechanical characterizations. In particular, atomic-resolution electron microscopy and nanoprobe composition quantification were combined in analyzing grain boundary structure and nanoscale structural features. Elongated SiC grains with 1 nm-wide amorphous intergranular films were believed to be responsible for the in situ toughening of this material, specifically by mechanisms of crack deflection and grain bridging. Two methods were found to be effective in modifying microstructure and optimizing mechanical performance. First, prescribed post-annealing treatments at temperatures between 1100 and 1500°C were seen to cause full crystallization of the amorphous intergranular films and to introduce uniformly dispersed nanoprecipitates within SiC matrix grains; in addition, lattice diffusion of aluminum at elevated temperatures was seen to alter grain-boundary composition. Second, adjusting the nominal content of sintering additives was also observed to change the grain morphology, the grain-boundary structure, and the phase composition of the ABC-SiC. In this regard, the roles of individual additives in developing boundary microstructures were identified; this was demonstrated to be critical in optimizing the mechanical properties, including fracture toughness and fatigue resistance at ambient and elevated temperatures, flexural strength, wear resistance, and creep resistance.

Microstructural development in cubic silicon carbide during irradiation at elevated temperatures

2006 ◽  
Vol 351 (1-3) ◽  
pp. 228-240 ◽  
Author(s):  
Y. Katoh ◽  
N. Hashimoto ◽  
S. Kondo ◽  
L.L. Snead ◽  
A. Kohyama
Keyword(s):  
Silicon Carbide ◽  
Elevated Temperatures ◽  
Microstructural Development ◽  
Cubic Silicon Carbide

Voids in Irradiated Tungsten and Molybdenum

1969 ◽  
Vol 27 ◽  
pp. 190-191
Author(s):  
Robert C. Rau ◽  
Robert L. Ladd
Keyword(s):  
Melting Point ◽  
Fast Neutron ◽  
Neutron Irradiation ◽  
Elevated Temperatures ◽  
Irradiation Temperature ◽  
The Body ◽  
Face Centered Cubic ◽  
Body Centered Cubic ◽  
Cubic Metals ◽  
Face Centered

Recent studies have shown the presence of voids in several face-centered cubic metals after neutron irradiation at elevated temperatures. These voids were found when the irradiation temperature was above 0.3 Tm where Tm is the absolute melting point, and were ascribed to the agglomeration of lattice vacancies resulting from fast neutron generated displacement cascades. The present paper reports the existence of similar voids in the body-centered cubic metals tungsten and molybdenum.

Mechanical Properties and Dislocation Structure of Single Crystal Cdte Deformed in Compression at 300°C

1976 ◽  
Vol 34 ◽  
pp. 592-593
Author(s):  
Ernest L. Hall ◽  
J. B. Vander Sande
Keyword(s):  
Mechanical Properties ◽  
Single Crystal ◽  
Dislocation Structure ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Strain Curve ◽  
Optical Devices ◽  
Semiconductor Compound ◽  
Wide Range ◽  
Sample Orientation

The present paper describes research on the mechanical properties and related dislocation structure of CdTe, a II-VI semiconductor compound with a wide range of uses in electrical and optical devices. At room temperature CdTe exhibits little plasticity and at the same time relatively low strength and hardness. The mechanical behavior of CdTe was examined at elevated temperatures with the goal of understanding plastic flow in this material and eventually improving the room temperature properties. Several samples of single crystal CdTe of identical size and crystallographic orientation were deformed in compression at 300°C to various levels of total strain. A resolved shear stress vs. compressive glide strain curve (Figure la) was derived from the results of the tests and the knowledge of the sample orientation.

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