Multispectral Chemically Vapor-Deposited ZnS: An Initial Characterization

Author(s):  
C Williangham ◽  
C Klein ◽  
J Pappis
Author(s):  
B. Cunningham ◽  
D.G. Ast

There have Been a number of studies of low-angle, θ < 4°, [10] tilt boundaries in the diamond lattice. Dislocations with Burgers vectors a/2<110>, a/2<112>, a<111> and a<001> have been reported in melt-grown bicrystals of germanium, and dislocations with Burgers vectors a<001> and a/2<112> have been reported in hot-pressed bicrystals of silicon. Most of the dislocations were found to be dissociated, the dissociation widths being dependent on the tilt angle. Possible dissociation schemes and formation mechanisms for the a<001> and a<111> dislocations from the interaction of lattice dislocations have recently been given.The present study reports on the dislocation structure of a 10° [10] tilt boundary in chemically vapor deposited silicon. The dislocations in the boundary were spaced about 1-3nm apart, making them difficult to resolve by conventional diffraction contrast techniques. The dislocation structure was therefore studied by the lattice-fringe imaging technique.


RNA Biology ◽  
2021 ◽  
Author(s):  
Peter Zorn ◽  
Danny Misiak ◽  
Michael Gekle ◽  
Marcel Köhn

2021 ◽  
Vol 40 ◽  
pp. 119180
Author(s):  
Yinjiao Zhao ◽  
Pingfan Wei ◽  
Dan Wang ◽  
Wenrui Han ◽  
Hanyu Mao ◽  
...  

1992 ◽  
Vol 267 (30) ◽  
pp. 21678-21684 ◽  
Author(s):  
M Ozaki ◽  
K Fujinami ◽  
K Tanaka ◽  
Y Amemiya ◽  
T Sato ◽  
...  

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